Two eutectic alloys Bi-Ag and Bi-Zn were rapidly solidified using melt-spinning technique. X-ray diffraction analysis (XRD), differential scanning calorimetry (DSC), and temperature dependence of resistivity (TDR) wer...Two eutectic alloys Bi-Ag and Bi-Zn were rapidly solidified using melt-spinning technique. X-ray diffraction analysis (XRD), differential scanning calorimetry (DSC), and temperature dependence of resistivity (TDR) were performed. The solid solubility of both Ag and Zn was extended to the eutectic concentration due to rapid solidification by melt spinning technique and both alloys are single-phase solid solutions. The addition of Ag extended the unit cell in both a and c directions keeping the axial ratio c/a without change, and in case of Zn addition, the unit cell was increased in a direction and decreased in c direction leading to the decrease in the axial ratio c/a. The Bi-Ag eutectic alloy exhibited a semiconducting behavior with energy gap of 280 meV, while Bi-Zn eutectic alloy exhibited metallic behavior.展开更多
Five alloys Sn-5Bi-xAg (x = 0, 1, 2, 3, and 4 in at %) are produced by rapid solidification using melt-spinning technique. From temperature dependence of electrical resistivity (TDR), it is found that the Sn-5Bi-xAg (...Five alloys Sn-5Bi-xAg (x = 0, 1, 2, 3, and 4 in at %) are produced by rapid solidification using melt-spinning technique. From temperature dependence of electrical resistivity (TDR), it is found that the Sn-5Bi-xAg (x = 1, 2, 3, 4 in at %) rapidly solidified by melt spinning technique are narrow band semiconductor alloys. The energy gap Eg decreases by increasing Ag concentration from 203 meV for Sn-5Bi-1Ag to 97.5 meV for Sn-5Bi-4Ag alloy. From x-ray diffraction analysis (XRD), it is found that the Hume-Rothery condition for phase stability is not satisfied for this alloy.展开更多
文摘Two eutectic alloys Bi-Ag and Bi-Zn were rapidly solidified using melt-spinning technique. X-ray diffraction analysis (XRD), differential scanning calorimetry (DSC), and temperature dependence of resistivity (TDR) were performed. The solid solubility of both Ag and Zn was extended to the eutectic concentration due to rapid solidification by melt spinning technique and both alloys are single-phase solid solutions. The addition of Ag extended the unit cell in both a and c directions keeping the axial ratio c/a without change, and in case of Zn addition, the unit cell was increased in a direction and decreased in c direction leading to the decrease in the axial ratio c/a. The Bi-Ag eutectic alloy exhibited a semiconducting behavior with energy gap of 280 meV, while Bi-Zn eutectic alloy exhibited metallic behavior.
文摘Five alloys Sn-5Bi-xAg (x = 0, 1, 2, 3, and 4 in at %) are produced by rapid solidification using melt-spinning technique. From temperature dependence of electrical resistivity (TDR), it is found that the Sn-5Bi-xAg (x = 1, 2, 3, 4 in at %) rapidly solidified by melt spinning technique are narrow band semiconductor alloys. The energy gap Eg decreases by increasing Ag concentration from 203 meV for Sn-5Bi-1Ag to 97.5 meV for Sn-5Bi-4Ag alloy. From x-ray diffraction analysis (XRD), it is found that the Hume-Rothery condition for phase stability is not satisfied for this alloy.