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Principle of X-ray Ф-scan and Application ofHigh T_c Bi-epitaxial Junction
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作者 杨坚 古宏伟 +2 位作者 马平 陈岚峰 常世安 《Rare Metals》 SCIE EI CAS CSCD 1995年第4期272-275,共4页
The X-ray Ф-scan technique was applied to determine the in-plane orientation relationship of the high T_csuperconductins bi-epitaxial junction. The result shows that the in-plane orientation relation of the films in ... The X-ray Ф-scan technique was applied to determine the in-plane orientation relationship of the high T_csuperconductins bi-epitaxial junction. The result shows that the in-plane orientation relation of the films in thetwo sides of the grain boundary can be easily obtained with this method. By controlling the growth condition,a 45° YBCO grain boundary can be made on the SrTiO_3 substrate. 展开更多
关键词 bi-epitaxial High T_c superconductor Multilayer film Ф-scan
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