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Structure and Thermoelectric Properties of Nanostructured (Bi, Sb)<sub>2</sub>Te<sub>3</sub>(Review)
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作者 Igor A. Drabkin Vladimir V. Karataev +3 位作者 Vladimir B. Osvenski Aleksandr I. Sorokin Gennady I. Pivovarov Natalie Yu. Tabachkova 《Advances in Materials Physics and Chemistry》 2013年第2期119-132,共14页
The investigation of the structure and thermoelectric properties of nanostructured solid solutions (Bi, Sb)2Te3 p-type has been carried out. The samples were obtained by grinding of original compositions in a planetar... The investigation of the structure and thermoelectric properties of nanostructured solid solutions (Bi, Sb)2Te3 p-type has been carried out. The samples were obtained by grinding of original compositions in a planetary ball mill and by spark plasma sintering (SPS). Initial powder has an average particle size of 10 - 12 nm according to transmission electron microscopy, and the size of the coherent scattering region (CSR) obtained by X-ray line broadening. During sintering at Ts = 250°C - 400°C, the grain size and CSR increased, which was associated with the processes of recrystallization. The maximum of size distribution of CSR shifts to larger sizes when Ts increases so that no broadening of X-ray lines at Ts = 400°C can take place. At higher Ts, the emergence of new nanograins is observed. The formation of nanograins is conditioned by reducing of quantity of the intrinsic point defects produced in the grinding of the source materials. The study of the electrical conductivity and the Hall effect in a single crystal allows to estimate the mean free path of the holes-L in the single crystal Bi0.5Sb1.5Te3 which at room temperature is 2 - 5 nm (it is much smaller than the dimensions of CSR in the samples). The method for evaluation of L in polycrystalline samples is proposed. At room temperature, L is close to the mean free path in single crystals. Scattering parameter holes in SPS samples obtained from the temperature dependence of the Seebeck coefficient are within the measurement error equal to the parameter of the scattering of holes in a single crystal. The figure of merit ZT of SPS samples as a function of composition and sintering temperature has been investigated. Maximum ZT, equal to 1.05 at room temperature, is obtained for the composition Bi0.4Sb1.6Te3 at Ts = 500°C and a pressure of 50 MPa. The causes of an apparent increase in thermoelectric efficiency are discussed. 展开更多
关键词 Solid Solutions (Bi Sb)2Te3 P-Type Nanostructure spark plasma sintering CONDUCTIVITY Hall Effect Hole Free Path SEEBECK Coefficient Thermal CONDUCTIVITY Figure of Merit
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SPS法制备p-型四元Al-Bi-Sb-Te合金的微结构与热电性能 被引量:2
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作者 崔教林 杨炜 +1 位作者 赵伟敏 徐雪波 《中国有色金属学报》 EI CAS CSCD 北大核心 2005年第10期1526-1531,共6页
采用SPS法制备了p-型四元Al-Bi-Sb-Te合金,研究其微结构和热电性能.结果表明:Al含量直接影响材料的电、热学输运性能.当材料中Al替代Sb元素后,四元合金AlxBi0.5Sb15-xTe3(x=0.05~0.2)的电导率明显增大;在室温附近,x=0.1的合金其电导率... 采用SPS法制备了p-型四元Al-Bi-Sb-Te合金,研究其微结构和热电性能.结果表明:Al含量直接影响材料的电、热学输运性能.当材料中Al替代Sb元素后,四元合金AlxBi0.5Sb15-xTe3(x=0.05~0.2)的电导率明显增大;在室温附近,x=0.1的合金其电导率可达3.3×104Ω-1·m-1,大约是三元Bi0.5Sb1.5 Te3合金的2倍;四元合金系的最小Seebeck系数α为115μV/K,说明材料属p-型半导体;当温度为411 K时,合金AlxBi0.5-Sb1.5-xTe3(x=0.1)的ZT值出现最大值,其值为0.58,是同温度下典型三元Bi0.5Sb1.5Te3合金的1.6倍. 展开更多
关键词 四元Al—Bi—Sb—Te合金 放电等离子烧结系统 微结构 热电性能
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(Bi1-xAgx)2(Te1-ySey)3粉体的机械合金化制备及其放电等离子烧结体的热电输运特性 被引量:2
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作者 张忻 李佳 +2 位作者 路清梅 张久兴 刘燕琴 《物理学报》 SCIE EI CAS CSCD 北大核心 2008年第7期4466-4470,共5页
采用机械合金化制备了n型(Bi1-xAgx)2(Te1-ySey)3合金粉体,对其进行XRD分析表明Bi,Te,Ag,Se单质粉末,经2h球磨后实现了合金化;SEM分析表明随着机械合金化时间延长粉体颗粒变得均匀、细小,颗粒尺寸在微米至亚微米数量级.采用放电等离子... 采用机械合金化制备了n型(Bi1-xAgx)2(Te1-ySey)3合金粉体,对其进行XRD分析表明Bi,Te,Ag,Se单质粉末,经2h球磨后实现了合金化;SEM分析表明随着机械合金化时间延长粉体颗粒变得均匀、细小,颗粒尺寸在微米至亚微米数量级.采用放电等离子烧结制备了块体样品,研究了合金成分和球磨时间对热电性能的影响.结果表明材料的热电性能与掺杂元素有密切关系,Ag有利于提高功率因子和降低晶格热导率,球磨10h的(Bi0.99Ag0.01)2(Te0.96Se0.04)3合金粉末的烧结块体具有最大的功率因子和最低的晶格热导率,并在323K取得最高ZT值0.52. 展开更多
关键词 (Bi1-xAgx)2(Te1-ySey)3合金 机械合金化 放电等离子烧结 热电性能
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