Thermoelectric materials,enabling the directing conversion between heat and electricity,are one of the promising candidates for overcoming environmental pollution and the upcoming energy shortage caused by the over-co...Thermoelectric materials,enabling the directing conversion between heat and electricity,are one of the promising candidates for overcoming environmental pollution and the upcoming energy shortage caused by the over-consumption of fossil fuels.Bi2Te3-based alloys are the classical thermoelectric materials working near room temperature.Due to the intensive theoretical investigations and experimental demonstrations,significant progress has been achieved to enhance the thermoelectric performance of Bi2Te3-based thermoelectric materials.In this review,we first explored the fundamentals of thermoelectric effect and derived the equations for thermoelectric properties.On this basis,we studied the effect of material parameters on thermoelectric properties.Then,we analyzed the features of Bi2Te3-based thermoelectric materials,including the lattice defects,anisotropic behavior and the strong bipolar conduction at relatively high temperature.Then we accordingly summarized the strategies for enhancing the thermoelectric performance,including point defect engineering,texture alignment,and band gap enlargement.Moreover,we highlighted the progress in decreasing thermal conductivity using nanostructures fabricated by solution grown method,ball milling,and melt spinning.Lastly,we employed modeling analysis to uncover the principles of anisotropy behavior and the achieved enhancement in Bi2Te3,which will enlighten the enhancement of thermoelectric performance in broader materials展开更多
In recent decades, many additives with different characteristics have been applied to strengthen and toughen Al2O3-based ceramic cutting tool materials. Among them, SiC whiskers and SiC nanoparticles showed excellent ...In recent decades, many additives with different characteristics have been applied to strengthen and toughen Al2O3-based ceramic cutting tool materials. Among them, SiC whiskers and SiC nanoparticles showed excellent performance in improving the material properties. While no attempts have been made to add SiC whiskers and SiC nanoparticles together into the ceramic matrix and the synergistically toughening effects of them have not been studied. An Al2O3-SiCw-SiC np advanced ceramic cutting tool material is fabricated by adding both one-dimensional SiC whiskers and zero-dimensional SiC nanoparticles into the Al2O3 matrix with an effective dispersing and mixing process. The composites with 25 vol% SiC whiskers and 25 vol% SiC nanoparticles alone are also investegated for comparison purposes. Results show that the Al2O3-SiCw-SiCnp composite with both 20 vo1% SiC whiskers and 5 vol% SiC nanoparticles additives have much improved mechanical properties. The flexural strength of Al2O3-SiCw-SiCnp is 730＋ 95 MPa and fracture toughness is 5.6 ± 0.6 MPa.m1/2. The toughening and strengthening mechanisms of SiC whiskers and nanoparticles are studied when they are added either individually or in combination. It is indicated that when SiC whiskers and nanoparticles are added together, the grains are further refined and homogenized, so that the microstructure and fracture mode ratio is modified. The SiC nanoparticles are found helpful to enhance the toughening effects of the SiC whiskers. The proposed research helps to enrich the types of ceramic cutting tool and is benefit to expand the application range of ceramic cutting tool.展开更多
Bi_2Te_3 thin films and GeTe/B_2Te_3 superlattices of different thicknesses are prepared on the silicon dioxide substrates by magnetron sputtering technique and thermally annealed at 573 K for 30 min. Thermoelectric...Bi_2Te_3 thin films and GeTe/B_2Te_3 superlattices of different thicknesses are prepared on the silicon dioxide substrates by magnetron sputtering technique and thermally annealed at 573 K for 30 min. Thermoelectric（TE）measurements indicate that optimal thickness and thickness ratio improve the TE performance of Bi_2Te_3 thin films and GeTe/B_2Te_3 superlattices, respectively. High TE performances with figure-of-merit（ZT） values as high as 1.32 and 1.56 are achieved at 443 K for 30 nm and 50 nm Bi_2Te_3 thin films, respectively. These ZT values are higher than those of p-type Bi_2Te_3 alloys as reported. Relatively high ZT of the GeTe/B_2Te_3 superlattices at 300-380 K were 0.62-0.76. The achieved high ZT value may be attributed to the unique nano-and microstructures of the films,which increase phonon scattering and reduce thermal conductivity. The results indicate that Bi_2Te_3-based thin films can serve as high-performance materials for applications in TE devices.展开更多
The electronic structures of bulk Bi_2Te_3 crystals were investigated by the first-principles calculations.The transport coefficients including Seeback coefficient and power factor were then calculated by the Boltzman...The electronic structures of bulk Bi_2Te_3 crystals were investigated by the first-principles calculations.The transport coefficients including Seeback coefficient and power factor were then calculated by the Boltzmann theory,and further evaluated as a function of chemical potential assuming a rigid band picture.The results suggest that p-type doping in the Bi_2Te_3 compound may be more favorable than n-type doping.From this analysis results,doping effects on a material will exhibit high ZT.Furthermore,we can also find the right doping concentration to produce more efficient materials,and present the ＂advantage filling element map＂ in detail.展开更多
We develop a tractable theoretical model to investigate the thermoelectric （TE） transport properties of surface states in topological insulator thin films （TITFs） of Bi2Sea at room temperature. The hybridization b...We develop a tractable theoretical model to investigate the thermoelectric （TE） transport properties of surface states in topological insulator thin films （TITFs） of Bi2Sea at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi2Sea-based TITFs as high-performance TE materials and devices.展开更多
In order to investigate the adaptability of thermoelectric materials system with different barriers to functional graded thermoelectric materials, n-type Bi2Te, and PbTe two segments graded thermoelectric materials (G...In order to investigate the adaptability of thermoelectric materials system with different barriers to functional graded thermoelectric materials, n-type Bi2Te, and PbTe two segments graded thermoelectric materials (GTM) with different barriers were fabricated by conventional hot pressing method. Metals Cu, Al, Fe, Co and Ni were used as barriers between two segments. The effects of different barriers on thermoelectric properties of GTM were investigated. The phase and crystal structures were determined by x-ray diffraction analysis (XRD). The distributions of different compositions were analyzed by electron microprobe analysis (EMA). The thermoelectric properties were measured at 303 K along the direction parallel to the pressing direction. The electric conductivity of samples was measured at 303 K by the four-probe technique. To measure the Seebeck coefficient, heat was applied to the samples, which were placed between two Cu discs. The thermoelectric electromotive force (E) was measured upon applying small temperature differences (DeltaT<275 K) between the both ends of the samples. The Seebeck coefficient of the samples was determined from the E/&UDelta;T.展开更多
Bismuth telluride（Bi2Te3） based alloys, such as p-type Bi（0.5）Sb（1.5）Te3, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi（0.48）Sb（1.52）Te3 bulk materials...Bismuth telluride（Bi2Te3） based alloys, such as p-type Bi（0.5）Sb（1.5）Te3, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi（0.48）Sb（1.52）Te3 bulk materials with MnSb2Se4 were prepared using high-energy ball milling and spark plasma sintering（SPS） process. The addition of MnSb2Se4 to Bi（0.48）Sb（1.52）Te3 increased the hole concentration while slightly decreasing the Seebeck coefficient, thus optimising the electrical transport properties of the bulk material. In addition, the second phases of MnSb2Se4 and Bi（0.48）Sb（1.52）Te3 were observed in the Bi（0.48）Sb（1.52）Te3 matrix. The nanoparticles in the semi-coherent second phase of MnSb2Se4 behaved as scattering centres for phonons,yielding a reduction in the lattice thermal conductivity. Substantial enhancement of the figure of merit, ZT, has been achieved for Bi（0.48）Sb（1.52）Te3 by adding an Mn（0.8）Cu（0.2）Sb2Se4（2mol%） sample, for a wide range of temperatures, with a peak value of 1.43 at 375 K, corresponding to -40% improvement over its Bi（0.48）Sb（1.52）Te3 counterpart. Such enhancement of the thermoelectric（TE） performance of p-type Bi2Te3 based materials is believed to be advantageous for practical applications.展开更多
基金Project supported by the Australian Research CouncilZhi-Gang Chen thanks the USQ start-up grantstrategic research grant
文摘Thermoelectric materials,enabling the directing conversion between heat and electricity,are one of the promising candidates for overcoming environmental pollution and the upcoming energy shortage caused by the over-consumption of fossil fuels.Bi2Te3-based alloys are the classical thermoelectric materials working near room temperature.Due to the intensive theoretical investigations and experimental demonstrations,significant progress has been achieved to enhance the thermoelectric performance of Bi2Te3-based thermoelectric materials.In this review,we first explored the fundamentals of thermoelectric effect and derived the equations for thermoelectric properties.On this basis,we studied the effect of material parameters on thermoelectric properties.Then,we analyzed the features of Bi2Te3-based thermoelectric materials,including the lattice defects,anisotropic behavior and the strong bipolar conduction at relatively high temperature.Then we accordingly summarized the strategies for enhancing the thermoelectric performance,including point defect engineering,texture alignment,and band gap enlargement.Moreover,we highlighted the progress in decreasing thermal conductivity using nanostructures fabricated by solution grown method,ball milling,and melt spinning.Lastly,we employed modeling analysis to uncover the principles of anisotropy behavior and the achieved enhancement in Bi2Te3,which will enlighten the enhancement of thermoelectric performance in broader materials
基金Supported by National Natural Science Foundation of China(Grant No.51175305)
文摘In recent decades, many additives with different characteristics have been applied to strengthen and toughen Al2O3-based ceramic cutting tool materials. Among them, SiC whiskers and SiC nanoparticles showed excellent performance in improving the material properties. While no attempts have been made to add SiC whiskers and SiC nanoparticles together into the ceramic matrix and the synergistically toughening effects of them have not been studied. An Al2O3-SiCw-SiC np advanced ceramic cutting tool material is fabricated by adding both one-dimensional SiC whiskers and zero-dimensional SiC nanoparticles into the Al2O3 matrix with an effective dispersing and mixing process. The composites with 25 vol% SiC whiskers and 25 vol% SiC nanoparticles alone are also investegated for comparison purposes. Results show that the Al2O3-SiCw-SiCnp composite with both 20 vo1% SiC whiskers and 5 vol% SiC nanoparticles additives have much improved mechanical properties. The flexural strength of Al2O3-SiCw-SiCnp is 730＋ 95 MPa and fracture toughness is 5.6 ± 0.6 MPa.m1/2. The toughening and strengthening mechanisms of SiC whiskers and nanoparticles are studied when they are added either individually or in combination. It is indicated that when SiC whiskers and nanoparticles are added together, the grains are further refined and homogenized, so that the microstructure and fracture mode ratio is modified. The SiC nanoparticles are found helpful to enhance the toughening effects of the SiC whiskers. The proposed research helps to enrich the types of ceramic cutting tool and is benefit to expand the application range of ceramic cutting tool.
文摘Bi_2Te_3 thin films and GeTe/B_2Te_3 superlattices of different thicknesses are prepared on the silicon dioxide substrates by magnetron sputtering technique and thermally annealed at 573 K for 30 min. Thermoelectric（TE）measurements indicate that optimal thickness and thickness ratio improve the TE performance of Bi_2Te_3 thin films and GeTe/B_2Te_3 superlattices, respectively. High TE performances with figure-of-merit（ZT） values as high as 1.32 and 1.56 are achieved at 443 K for 30 nm and 50 nm Bi_2Te_3 thin films, respectively. These ZT values are higher than those of p-type Bi_2Te_3 alloys as reported. Relatively high ZT of the GeTe/B_2Te_3 superlattices at 300-380 K were 0.62-0.76. The achieved high ZT value may be attributed to the unique nano-and microstructures of the films,which increase phonon scattering and reduce thermal conductivity. The results indicate that Bi_2Te_3-based thin films can serve as high-performance materials for applications in TE devices.
基金Funded by National Natural Science Foundation of China(Nos.81371973 and 11304090)Wuhan Municipal Health and Family Planning Commission Foundation of China(No.WX15C10)
文摘The electronic structures of bulk Bi_2Te_3 crystals were investigated by the first-principles calculations.The transport coefficients including Seeback coefficient and power factor were then calculated by the Boltzmann theory,and further evaluated as a function of chemical potential assuming a rigid band picture.The results suggest that p-type doping in the Bi_2Te_3 compound may be more favorable than n-type doping.From this analysis results,doping effects on a material will exhibit high ZT.Furthermore,we can also find the right doping concentration to produce more efficient materials,and present the ＂advantage filling element map＂ in detail.
基金Supported by the National Natural Science Foundation of China under Grant No 11304316the Ministry of Science and Technology of China under Grant No 2011YQ130018the Department of Science and Technology of Yunnan Province,and the Chinese Academy of Sciences
文摘We develop a tractable theoretical model to investigate the thermoelectric （TE） transport properties of surface states in topological insulator thin films （TITFs） of Bi2Sea at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi2Sea-based TITFs as high-performance TE materials and devices.
基金This work was financially supported by the Nationol Natural Science Foundation of China (No. 59772012)
文摘In order to investigate the adaptability of thermoelectric materials system with different barriers to functional graded thermoelectric materials, n-type Bi2Te, and PbTe two segments graded thermoelectric materials (GTM) with different barriers were fabricated by conventional hot pressing method. Metals Cu, Al, Fe, Co and Ni were used as barriers between two segments. The effects of different barriers on thermoelectric properties of GTM were investigated. The phase and crystal structures were determined by x-ray diffraction analysis (XRD). The distributions of different compositions were analyzed by electron microprobe analysis (EMA). The thermoelectric properties were measured at 303 K along the direction parallel to the pressing direction. The electric conductivity of samples was measured at 303 K by the four-probe technique. To measure the Seebeck coefficient, heat was applied to the samples, which were placed between two Cu discs. The thermoelectric electromotive force (E) was measured upon applying small temperature differences (DeltaT<275 K) between the both ends of the samples. The Seebeck coefficient of the samples was determined from the E/&UDelta;T.
基金supported by the National Natural Science Foundation of China(Grant Nos.51472052 and Y6J1421A41)
文摘Bismuth telluride（Bi2Te3） based alloys, such as p-type Bi（0.5）Sb（1.5）Te3, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi（0.48）Sb（1.52）Te3 bulk materials with MnSb2Se4 were prepared using high-energy ball milling and spark plasma sintering（SPS） process. The addition of MnSb2Se4 to Bi（0.48）Sb（1.52）Te3 increased the hole concentration while slightly decreasing the Seebeck coefficient, thus optimising the electrical transport properties of the bulk material. In addition, the second phases of MnSb2Se4 and Bi（0.48）Sb（1.52）Te3 were observed in the Bi（0.48）Sb（1.52）Te3 matrix. The nanoparticles in the semi-coherent second phase of MnSb2Se4 behaved as scattering centres for phonons,yielding a reduction in the lattice thermal conductivity. Substantial enhancement of the figure of merit, ZT, has been achieved for Bi（0.48）Sb（1.52）Te3 by adding an Mn（0.8）Cu（0.2）Sb2Se4（2mol%） sample, for a wide range of temperatures, with a peak value of 1.43 at 375 K, corresponding to -40% improvement over its Bi（0.48）Sb（1.52）Te3 counterpart. Such enhancement of the thermoelectric（TE） performance of p-type Bi2Te3 based materials is believed to be advantageous for practical applications.
