在常压下用烧结法制备了具有高有序晶列结构的Bi4Si3O12微晶。利用X射线衍射(X-ray diffraction,XRD)和环境扫描电镜(Environmental Scanning Electron Microscopy,ESEM)分析了生成晶体的物相和微观形貌。结果表明:生成的是纯的立方相Bi...在常压下用烧结法制备了具有高有序晶列结构的Bi4Si3O12微晶。利用X射线衍射(X-ray diffraction,XRD)和环境扫描电镜(Environmental Scanning Electron Microscopy,ESEM)分析了生成晶体的物相和微观形貌。结果表明:生成的是纯的立方相Bi4Si3O12晶体。Bi4Si3O12晶粒总是成对分布,且排列成行,从而形成高有序的晶列结构。其晶粒尺寸变化趋势有两种,一种是逐渐增大或者减小,另一种是晶粒尺寸在某一区域值内基本保持不变。在大多数情况下,每个晶行两侧的晶粒变化趋势具有一致性,每行两侧的晶粒尺寸具有高度的正相关特性。如果某行两侧的晶粒尺寸变化趋势不一致,而且晶粒尺寸不相关,则该行两侧晶粒应该属于两种不同的变化趋势。展开更多
Highly ordered Bi4Si3O12 micro-crystals were prepared at normal atmosphere. Phase identification of the prepared crystals was accomplished by X-ray diffractometer (XRD). Domain structure and defects were characterized...Highly ordered Bi4Si3O12 micro-crystals were prepared at normal atmosphere. Phase identification of the prepared crystals was accomplished by X-ray diffractometer (XRD). Domain structure and defects were characterized by environmental scanning electron microscopy (ESEM). XRD shows that the obtained micro-crystals are of eulytite structure with chemical formulation of Bi4Si3O12. A highly ordered growth pattern is confirmed due to the faster growth of the {124} faces than that of the {204} faces by ESEM. The growing process of the domain structure is of pollen parent and filial generation pattern. The filial generations of Bi4Si3O12 crystals are generated from the pollen parent. Cracks generate from the defect areas and propagate along the {124} faces due to their lower binding energy under a proper temperature gradient, contributing to the total transcrystalline fracture. It is confirmed that the generation and development of the voids in the crystal grains can be developed when unmatched dimensions of the two opposite faces are formed. And the development of the voids is dependent on the dimensions and orientations of the two opposite faces.展开更多
文摘在常压下用烧结法制备了具有高有序晶列结构的Bi4Si3O12微晶。利用X射线衍射(X-ray diffraction,XRD)和环境扫描电镜(Environmental Scanning Electron Microscopy,ESEM)分析了生成晶体的物相和微观形貌。结果表明:生成的是纯的立方相Bi4Si3O12晶体。Bi4Si3O12晶粒总是成对分布,且排列成行,从而形成高有序的晶列结构。其晶粒尺寸变化趋势有两种,一种是逐渐增大或者减小,另一种是晶粒尺寸在某一区域值内基本保持不变。在大多数情况下,每个晶行两侧的晶粒变化趋势具有一致性,每行两侧的晶粒尺寸具有高度的正相关特性。如果某行两侧的晶粒尺寸变化趋势不一致,而且晶粒尺寸不相关,则该行两侧晶粒应该属于两种不同的变化趋势。
基金Supported by the Innovation Research Team Funds of Shaanxi University of Science & Technology (Grant No. SUST-A04)
文摘Highly ordered Bi4Si3O12 micro-crystals were prepared at normal atmosphere. Phase identification of the prepared crystals was accomplished by X-ray diffractometer (XRD). Domain structure and defects were characterized by environmental scanning electron microscopy (ESEM). XRD shows that the obtained micro-crystals are of eulytite structure with chemical formulation of Bi4Si3O12. A highly ordered growth pattern is confirmed due to the faster growth of the {124} faces than that of the {204} faces by ESEM. The growing process of the domain structure is of pollen parent and filial generation pattern. The filial generations of Bi4Si3O12 crystals are generated from the pollen parent. Cracks generate from the defect areas and propagate along the {124} faces due to their lower binding energy under a proper temperature gradient, contributing to the total transcrystalline fracture. It is confirmed that the generation and development of the voids in the crystal grains can be developed when unmatched dimensions of the two opposite faces are formed. And the development of the voids is dependent on the dimensions and orientations of the two opposite faces.
