研究了光电探测器(PD)的结构、性能以及后续放大电路,实现了塑料光纤通信的高速单片集成光接收芯片。首先,根据工艺流程和参数,采用器件模拟软件对PD结构进行了建模,并对其光谱响应度和结电容进行了理论推导及仿真。基于Cadence/spectr...研究了光电探测器(PD)的结构、性能以及后续放大电路,实现了塑料光纤通信的高速单片集成光接收芯片。首先,根据工艺流程和参数,采用器件模拟软件对PD结构进行了建模,并对其光谱响应度和结电容进行了理论推导及仿真。基于Cadence/spectre软件和仿真得到的PD参数对由跨阻放大器、限幅放大器和输出缓冲电路组成的后续放大电路进行了协同设计。采用0.5μm BCD(Bipolar,CMOS and DMOS)工艺对单个PD以及PD和后续放大电路单片集成电路进行了流片、封装和测试。结果表明:PD的光谱响应曲线的峰值波长和仿真结果较一致,约为700nm,PD结构更适合短波长探测;PD的结电容随着反向电压的增大而减小,结电容越大,光接收芯片的带宽越小;对于650nm的入射光,在小于10-9的误码率条件下,光接收机的灵敏度为-14dBm;最后得到了150Mb/s速率的清晰眼图。实验结果显示,设计的高速单片集成光接收机可以应用于百兆速率光纤入户通信系统。展开更多
提出一种蓄电池充电控制芯片的设计,具有恒流、恒压、过压、浮充等多种不同充电模式,可以在外部微处理器的支持下针对不同种类电池和应用场合的需要实现电池的高效优化充电。讨论并给出了芯片的系统组成及主要电路的设计,在1.5μm 50 V ...提出一种蓄电池充电控制芯片的设计,具有恒流、恒压、过压、浮充等多种不同充电模式,可以在外部微处理器的支持下针对不同种类电池和应用场合的需要实现电池的高效优化充电。讨论并给出了芯片的系统组成及主要电路的设计,在1.5μm 50 V BCD(Bipolar-CMOS-DMOS)工艺下予以实现。测试结果表明芯片工作正常,电路功能及芯片预期的主要功能已成功实现。展开更多
为提高0.35μm 30-0-50 V BCD(bipolar-CMOS-DMOS)工艺下50 V HVPMOS的电学性能,在不改变工艺流程的基础上,仅通过微调器件结构尺寸来实现电学性能的优化.采用Silvaco公司的工艺与器件模拟软件,仿真分析了沟道长度、overlap尺寸、场氧...为提高0.35μm 30-0-50 V BCD(bipolar-CMOS-DMOS)工艺下50 V HVPMOS的电学性能,在不改变工艺流程的基础上,仅通过微调器件结构尺寸来实现电学性能的优化.采用Silvaco公司的工艺与器件模拟软件,仿真分析了沟道长度、overlap尺寸、场氧化层长度及场极板长度对50 V HVPMOS器件电学性能的影响.根据仿真结果确定了优化后的结构尺寸,并结合流片测试结果验证了优化方案的可行性.测试结果表明,优化后50 V HVPMOS的开启电压降低到了-0.98 V,击穿电压提高到了-68 V,特征导通电阻降低了13.5%,饱和电流提高了13.1%,器件的安全工作范围增大,饱和区更加平滑,无明显kink效应.展开更多
A new semi-insulation structure in which one isolated island is connected to the substrate was pro- posed. Based on this semi-insulation structure, an advanced BCD technology which can integrate a vertical de- vice wi...A new semi-insulation structure in which one isolated island is connected to the substrate was pro- posed. Based on this semi-insulation structure, an advanced BCD technology which can integrate a vertical de- vice without extra internal interconnection structure was presented. The manufacturing of the new semi-insulation structure employed multi-epitaxy and selectively multi-doping. Isolated islands are insulated with the substrate by reverse-biased PN junctions. Adjacent isolated islands are insulated by isolation wall or deep dielectric trenches. The proposed semi-insulation structure and devices fixed in it were simulated through two-dimensional numerical computer simulators. Based on the new BCD technology, a smart power integrated circuit was designed and fabri- cated. The simulated and tested results of Vertical DMOS, MOSFETs, BJTs, resistors and diodes indicated that the proposed semi-insulation structure is reasonable and the advanced BCD technology is validated.展开更多
为了提高压电传感器测量系统的集成度,采用1μm高压双极—互补金属氧化物半导体—双重扩散金属氧化物半导体(BCD)工艺,设计了一种适用于压电传感器的信号调理及输出芯片。集成了电压放大型阻抗变换电路、可调增益放大电路、二线制电流...为了提高压电传感器测量系统的集成度,采用1μm高压双极—互补金属氧化物半导体—双重扩散金属氧化物半导体(BCD)工艺,设计了一种适用于压电传感器的信号调理及输出芯片。集成了电压放大型阻抗变换电路、可调增益放大电路、二线制电流输出电路。仿真结果表明:芯片具有输入阻抗高,单位增益带宽大,总增益可调范围广等特点,在12~24 V宽供电范围下可正常工作,耗电仅为3.1 m A。展开更多
文摘研究了光电探测器(PD)的结构、性能以及后续放大电路,实现了塑料光纤通信的高速单片集成光接收芯片。首先,根据工艺流程和参数,采用器件模拟软件对PD结构进行了建模,并对其光谱响应度和结电容进行了理论推导及仿真。基于Cadence/spectre软件和仿真得到的PD参数对由跨阻放大器、限幅放大器和输出缓冲电路组成的后续放大电路进行了协同设计。采用0.5μm BCD(Bipolar,CMOS and DMOS)工艺对单个PD以及PD和后续放大电路单片集成电路进行了流片、封装和测试。结果表明:PD的光谱响应曲线的峰值波长和仿真结果较一致,约为700nm,PD结构更适合短波长探测;PD的结电容随着反向电压的增大而减小,结电容越大,光接收芯片的带宽越小;对于650nm的入射光,在小于10-9的误码率条件下,光接收机的灵敏度为-14dBm;最后得到了150Mb/s速率的清晰眼图。实验结果显示,设计的高速单片集成光接收机可以应用于百兆速率光纤入户通信系统。
文摘提出一种蓄电池充电控制芯片的设计,具有恒流、恒压、过压、浮充等多种不同充电模式,可以在外部微处理器的支持下针对不同种类电池和应用场合的需要实现电池的高效优化充电。讨论并给出了芯片的系统组成及主要电路的设计,在1.5μm 50 V BCD(Bipolar-CMOS-DMOS)工艺下予以实现。测试结果表明芯片工作正常,电路功能及芯片预期的主要功能已成功实现。
文摘为提高0.35μm 30-0-50 V BCD(bipolar-CMOS-DMOS)工艺下50 V HVPMOS的电学性能,在不改变工艺流程的基础上,仅通过微调器件结构尺寸来实现电学性能的优化.采用Silvaco公司的工艺与器件模拟软件,仿真分析了沟道长度、overlap尺寸、场氧化层长度及场极板长度对50 V HVPMOS器件电学性能的影响.根据仿真结果确定了优化后的结构尺寸,并结合流片测试结果验证了优化方案的可行性.测试结果表明,优化后50 V HVPMOS的开启电压降低到了-0.98 V,击穿电压提高到了-68 V,特征导通电阻降低了13.5%,饱和电流提高了13.1%,器件的安全工作范围增大,饱和区更加平滑,无明显kink效应.
基金Project supported by the National Natural Science Foundation of China(No.61464002)the Science and Technology Fund of Guizhou Province(No.Qian Ke He J Zi[2014]2066)the Dr.Fund of Guizhou University(No.Gui Da Ren Ji He Zi(2013)20Hao)
文摘A new semi-insulation structure in which one isolated island is connected to the substrate was pro- posed. Based on this semi-insulation structure, an advanced BCD technology which can integrate a vertical de- vice without extra internal interconnection structure was presented. The manufacturing of the new semi-insulation structure employed multi-epitaxy and selectively multi-doping. Isolated islands are insulated with the substrate by reverse-biased PN junctions. Adjacent isolated islands are insulated by isolation wall or deep dielectric trenches. The proposed semi-insulation structure and devices fixed in it were simulated through two-dimensional numerical computer simulators. Based on the new BCD technology, a smart power integrated circuit was designed and fabri- cated. The simulated and tested results of Vertical DMOS, MOSFETs, BJTs, resistors and diodes indicated that the proposed semi-insulation structure is reasonable and the advanced BCD technology is validated.
文摘为了提高压电传感器测量系统的集成度,采用1μm高压双极—互补金属氧化物半导体—双重扩散金属氧化物半导体(BCD)工艺,设计了一种适用于压电传感器的信号调理及输出芯片。集成了电压放大型阻抗变换电路、可调增益放大电路、二线制电流输出电路。仿真结果表明:芯片具有输入阻抗高,单位增益带宽大,总增益可调范围广等特点,在12~24 V宽供电范围下可正常工作,耗电仅为3.1 m A。
