BiVO_(4)(BVO)is a promising material as the photoanode for use in photoelectrochemical applications.However,the high charge recombination and slow charge transfer of the BVO have been obstacles to achieving satisfacto...BiVO_(4)(BVO)is a promising material as the photoanode for use in photoelectrochemical applications.However,the high charge recombination and slow charge transfer of the BVO have been obstacles to achieving satisfactory photoelectrochemical performance.To address this,various modifications have been attempted,including the use of ferroelectric materials.Ferroelectric materials can form a permanent polarization within the layer,enhancing the separation and transport of photo-excited electron-hole pairs.In this study,we propose a novel approach by depositing an epitaxial BiFeO_(3)(BFO)thin film underneath the BVO thin film(BVO/BFO)to harness the ferroelectric property of BFO.The self-polarization of the inserted BFO thin film simultaneously functions as a buffer layer to enhance charge transport and a hole-blocking layer to reduce charge recombination.As a result,the BVO/BFO photoanodes showed more than 3.5 times higher photocurrent density(0.65 mA cm^(-2))at 1.23 V_(RHE)under the illumination compared to the bare BVO photoanodes(0.18 m A cm^(-2)),which is consistent with the increase of the applied bias photon-to-current conversion efficiencies(ABPE)and the result of electrochemical impedance spectroscopy(EIS)analysis.These results can be attributed to the self-polarization exhibited by the inserted BFO thin film,which promoted the charge separation and transfer efficiency of the BVO photoanodes.展开更多
High piezoelectric composite films composed of poly(vinylidene fluoride-co-hexafluoropropylene)(PVDF-HFP)and ferromagnetic cobalt ferrite(CoFe_(2)O_(4))(0.00 wt%to 0.2 wt%)are prepared by a solution casting method acc...High piezoelectric composite films composed of poly(vinylidene fluoride-co-hexafluoropropylene)(PVDF-HFP)and ferromagnetic cobalt ferrite(CoFe_(2)O_(4))(0.00 wt%to 0.2 wt%)are prepared by a solution casting method accompanied by uniaxial stretching and high electric field poling.The decisive effect of the poling electric field on the power generating capability was confirmed by the experiments.For pure PVDF-HFP films,when the maximum electric field Emax is 120 MV/m,the calibrated open circuit voltage reaches 2.93 V,which is much higher than those poled at lower electric fields(70 MV/m:1.41 V;90 MV/m:2.11 V).Furthermore,the addition of CoFe_(2)O_(4)also influences the piezoelectricity dramatically.In the samples containing 0.15 wt%CoFe_(2)O_(4),the calibrated open circuit voltage increases to the maximum value of 3.57 V.Meanwhile,the relative fraction of theβ-phase and the crystallinity degree are 99%and 48%,respectively.The effects of CoFe_(2)O_(4)nanoparticles on initial crystallization,uniaxial stretching and high electric field poling are investigated by XRD,FTIR and DSC.展开更多
基金supported by the program of Future Hydrogen Original Technology Development(2021M3I3A1084747),through the National Research Foundation of Korea(NRF)funded by the Korean government(Ministry of Science and ICT(MSIT))by the NRF grant funded by the Korea government(MSIT)(No.2020R1A2C1005590)。
文摘BiVO_(4)(BVO)is a promising material as the photoanode for use in photoelectrochemical applications.However,the high charge recombination and slow charge transfer of the BVO have been obstacles to achieving satisfactory photoelectrochemical performance.To address this,various modifications have been attempted,including the use of ferroelectric materials.Ferroelectric materials can form a permanent polarization within the layer,enhancing the separation and transport of photo-excited electron-hole pairs.In this study,we propose a novel approach by depositing an epitaxial BiFeO_(3)(BFO)thin film underneath the BVO thin film(BVO/BFO)to harness the ferroelectric property of BFO.The self-polarization of the inserted BFO thin film simultaneously functions as a buffer layer to enhance charge transport and a hole-blocking layer to reduce charge recombination.As a result,the BVO/BFO photoanodes showed more than 3.5 times higher photocurrent density(0.65 mA cm^(-2))at 1.23 V_(RHE)under the illumination compared to the bare BVO photoanodes(0.18 m A cm^(-2)),which is consistent with the increase of the applied bias photon-to-current conversion efficiencies(ABPE)and the result of electrochemical impedance spectroscopy(EIS)analysis.These results can be attributed to the self-polarization exhibited by the inserted BFO thin film,which promoted the charge separation and transfer efficiency of the BVO photoanodes.
基金supported by National Natural Science Foundation of China(No.51703015)Fundamental Research Funds for the Central Universities(No.2020CDJQY-A008).
文摘High piezoelectric composite films composed of poly(vinylidene fluoride-co-hexafluoropropylene)(PVDF-HFP)and ferromagnetic cobalt ferrite(CoFe_(2)O_(4))(0.00 wt%to 0.2 wt%)are prepared by a solution casting method accompanied by uniaxial stretching and high electric field poling.The decisive effect of the poling electric field on the power generating capability was confirmed by the experiments.For pure PVDF-HFP films,when the maximum electric field Emax is 120 MV/m,the calibrated open circuit voltage reaches 2.93 V,which is much higher than those poled at lower electric fields(70 MV/m:1.41 V;90 MV/m:2.11 V).Furthermore,the addition of CoFe_(2)O_(4)also influences the piezoelectricity dramatically.In the samples containing 0.15 wt%CoFe_(2)O_(4),the calibrated open circuit voltage increases to the maximum value of 3.57 V.Meanwhile,the relative fraction of theβ-phase and the crystallinity degree are 99%and 48%,respectively.The effects of CoFe_(2)O_(4)nanoparticles on initial crystallization,uniaxial stretching and high electric field poling are investigated by XRD,FTIR and DSC.