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Bi_(2)(Se_(0.53)Te_(0.47))_(3)纳米线的制备及其圆偏振光致电流效应
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作者 冯世尊 俞金玲 《福州大学学报(自然科学版)》 CAS 北大核心 2024年第1期14-19,共6页
采用化学气相沉积法制备Bi_(2)(Se_(0.53)Te_(0.47))_(3)纳米线,利用扫描电子显微镜和X射线能谱仪对其进行表征,并研究样品的圆偏振光致电流效应(circular photogalvanic effect, CPGE).利用1 064 nm激光激发,分别测试激光入射面垂直于... 采用化学气相沉积法制备Bi_(2)(Se_(0.53)Te_(0.47))_(3)纳米线,利用扫描电子显微镜和X射线能谱仪对其进行表征,并研究样品的圆偏振光致电流效应(circular photogalvanic effect, CPGE).利用1 064 nm激光激发,分别测试激光入射面垂直于纳米线和平行于纳米线时的CPGE电流.实验结果表明,测得的CPGE电流主要来自纳米线的拓扑表面态.激光垂直入射纳米线时的CPGE电流不为0,说明CPGE电流来源于纳米线能带的六角翘曲效应.本研究测得的Bi_(2)(Se_(0.53)Te_(0.47))_(3)纳米线的CPGE电流比文献报导的Bi2(Te0.23Se0.77)3纳米线增大2倍以上,这是因为Te组分的增加不但使得费米能级更加靠近狄拉克点,还降低了纳米线中载流子复合的概率,二者共同作用,使得CPGE电流增大. 展开更多
关键词 bi_(2)(se_(0.53)te_(0.47))_(3)纳米线 拓扑绝缘体 化学气相沉积 圆偏振光致电流效应
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γ-Fe_(2)O_(3) 量子点/Bi_(2)Te_(2.7)Se_(0.3)纳米复合材料的制备及热电性能研究
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作者 苏梦然 秦雷 张志伟 《北京信息科技大学学报(自然科学版)》 2023年第1期1-7,共7页
采用溶剂热法合成出γ-Fe_(2)O_(3) 量子点,并利用室温闪烧法合成了Bi_(2)Te_(2.7)Se_(0.3)化合物。将γ-Fe_(2)O_(3) 量子点添加到Bi_(2)Te_(2.7)Se_(0.3)粉料中,通过放电等离子烧结法制备出γ-Fe_(2)O_(3) 量子点/Bi_(2)Te_(2.7)Se_(0... 采用溶剂热法合成出γ-Fe_(2)O_(3) 量子点,并利用室温闪烧法合成了Bi_(2)Te_(2.7)Se_(0.3)化合物。将γ-Fe_(2)O_(3) 量子点添加到Bi_(2)Te_(2.7)Se_(0.3)粉料中,通过放电等离子烧结法制备出γ-Fe_(2)O_(3) 量子点/Bi_(2)Te_(2.7)Se_(0.3)纳米复合块体材料,研究了γ-Fe_(2)O_(3) 量子点添加对Bi_(2)Te_(2.7)Se_(0.3)物相、微观结构及热电性能的影响。结果表明:添加质量分数为5%以内γ-Fe_(2)O_(3) 量子点未对Bi_(2)Te_(2.7)Se_(0.3)的物相产生明显影响,γ-Fe_(2)O_(3) 量子点分散在Bi_(2)Te_(2.7)Se_(0.3)层状晶粒间,且降低了Bi_(2)Te_(2.7)Se_(0.3)的晶粒尺寸。随着γ-Fe_(2)O_(3) 添加量的增加,材料的载流子浓度和迁移率均下降,使得电导率和塞贝克(Seebeck)系数同时降低,导致功率因子下降,而热导率也获得了显著降低,使得ZT值略有增加,纯样和添加质量分数为5%γ-Fe_(2)O_(3) 量子点样品的最大ZT值分别为0.407和0.418。 展开更多
关键词 γ-Fe_(2)O_(3)量子点 bi_(2)te_(2.7)se_(0.3) 纳米复合材料 热电性能
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Identification and characterization of single crystal Bi_(2)Te_(3-x)Se_(x) alloy 被引量:1
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作者 Emina POZEGA Svetlana IVANOV +4 位作者 Zoran STEVIC Ljiljana KARANOVIC Rudolf TOMANEC Lidija GOMIDZELOVIC Ana KOSTOV 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2015年第10期3279-3285,共7页
The results of experimental investigation of n-type semiconductor based on Bi2Te3 alloy were presented. This material is used in manufacture of thermoelectric coolers and electrical power generation devices. BizTe2.88... The results of experimental investigation of n-type semiconductor based on Bi2Te3 alloy were presented. This material is used in manufacture of thermoelectric coolers and electrical power generation devices. BizTe2.88Se0.12 solid solution single crystal has been grown using the Czochralski method. Monitoring of structure changes of the sample was carried out by electron microscope. The elemental composition of the studied alloy was obtained by energy dispersive spectrometry (EDS) analysis and empirical formula of the compound was established. X-ray diffraction analysis confirmed that the Bi2Te2.88Se0.12 sample was a single phase with rhombohedral structure. The behavior upon heating was studied using differential thermal analysis (DTA) technique. Changes in physical and chemical properties of materials were measured as a function of increasing temperature by thermogravimetric analysis (TGA). The lattice parameters values obtained by X-ray powder diffraction analyses of Bi2Te2.88Se0.12 are very similar to BizTe3 lattice constants, indicating that a small portion of tellurium is replaced with selenium. The obtained values for specific electrical and thermal conductivities are in correlation with available literature data. The Vickers microhardness values are in range between HV 187 and HV 39.02 and decrease with load increasing. It is shown that very complex process of infrared thermography can be applied for characterization of thermoelectric elements and modules. 展开更多
关键词 bi_(2)te_(3) bi_(2)te_(3-x)se_(x) single crystal semiconductor thermoelectrical properties hardness thermovision imaging
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高压制备多晶Te掺杂Bi_(2)Se_(3)热电材料性能的研究
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作者 曹雄 张一博 +1 位作者 赵亮 康宇龙 《中国新技术新产品》 2023年第5期67-69,共3页
该文采用高温高压法合成了多晶Bi_(2)Se_(3-y)Te_(y)(y=0.1,0.3,0.5)样品。XRD对所有样品的物相分析表明,合成压力1GPa时获得的样品均为Bi_(2)Se_(3)基纯相样品。随后测试的所有样品的Seebeck系数均为负值,表现出典型的n型导电特性。热... 该文采用高温高压法合成了多晶Bi_(2)Se_(3-y)Te_(y)(y=0.1,0.3,0.5)样品。XRD对所有样品的物相分析表明,合成压力1GPa时获得的样品均为Bi_(2)Se_(3)基纯相样品。随后测试的所有样品的Seebeck系数均为负值,表现出典型的n型导电特性。热电参数测试结果表明Bi_(2)Se_(2.5)Te_(0.5)样品具有较优的热电性能,Seebeck系数绝对值和功率因子在567K附近分别达到最大值90.5μVK^(-1)和783.2μWm-1K2。同时,在整个测试温度范围内热导率随温度的升高而降低,最小值为1.76W/mK。最终,Bi_(2)Se_(2.5)Te_(0.5)样品的无量纲优值ZT在567K附近达到最大值0.25。 展开更多
关键词 bi_(2)se_(3-y)te_(y) 晶体结构 热电性能 ZT值
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高性能Bi_(2)Te_(3-x)Se_(x)热电薄膜的可控生长 被引量:5
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作者 陈赟斐 魏锋 +2 位作者 王赫 赵未昀 邓元 《物理学报》 SCIE EI CAS CSCD 北大核心 2021年第20期265-271,共7页
碲化铋基材料一直被认为是室温下性能最优异的热电材料之一,也是商用热电器件首选的块体材料.然而面对柔性或高密度设备等应用需求时,薄膜热电材料比块体材料更具优势.因此,提升薄膜材料热电性能及可控制备技术至关重要.与碲化铋基块体... 碲化铋基材料一直被认为是室温下性能最优异的热电材料之一,也是商用热电器件首选的块体材料.然而面对柔性或高密度设备等应用需求时,薄膜热电材料比块体材料更具优势.因此,提升薄膜材料热电性能及可控制备技术至关重要.与碲化铋基块体材料和P型碲化铋基薄膜相比,N型碲化铋基薄膜的性能相对偏低.本工作利用磁控溅射法制备了一系列N型碲化铋薄膜,研究衬底温度和工作压强对薄膜生长模式的影响规律,从而通过溅射参数精确调控薄膜的形貌、结构和生长取向,在合适的衬底温度和工作压强的共同作用下,制备出(00l)方向层状生长的高质量致密薄膜.由于层状结构薄膜具有超高的面内载流子迁移率,该薄膜实现了大于10^(5) S/m的超高电导率.由于兼具高电导率与高Seebeck系数,该层状薄膜试样在室温下的功率因子高达42.5μW/(cm·K^(2)),克服了N型碲化铋基薄膜材料难以匹配P型碲化铋基薄膜材料的困难. 展开更多
关键词 bi_(2)te_(3–x)se_(x)薄膜 磁控溅射 热电 功率因子
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Band alignment of type-Ⅰ SnS_(2)/Bi_(2)Se_(3) and type-Ⅱ SnS_(2)/Bi_(2)Te_(3) van der Waals heterostructures for highly enhanced photoelectric responses 被引量:2
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作者 Mingwei Luo Chunhui Lu +4 位作者 Yuqi Liu Taotao Han Yanqing Ge Yixuan Zhou Xinlong Xu 《Science China Materials》 SCIE EI CAS CSCD 2022年第4期1000-1011,共12页
Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance.Band alignment is crucial for understanding the mechanism of charge carrie... Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance.Band alignment is crucial for understanding the mechanism of charge carrier transportation and interface dynamics in heterostructures.Herein,we grew SnS_(2)/Bi_(2)X_(3)(X=Se,Te)van der Waals heterostructures by combining physical vapor deposition with chemical vapor deposition.The band alignment,measured by high-resolution X-ray photoelectron spectroscopy,suggested the successful design of type-Ⅰ SnS_(2)/Bi_(2)Te_(3) and type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructures.The SnS_(2)/Bi_(2)X_(3) heterostructure greatly improved the photoelectric response of a photoelectrochemical-type photodetector.The photocurrent densities in the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) and type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructure-based devices were more than one order of magnitude higher than those of SnS_(2),Bi_(2)Te_(3),and Bi_(2)Te_(3).The improved photoelectric properties of the SnS_(2)/Bi_(2)X_(3) heterostructures can be explained as follows:(i)the photoexcited electrons and holes are effectively separated in the heterostructures;(ii)the charge-transfer efficiency and carrier density at the interface between the SnS_(2)/Bi_(2)X_(3) heterostructures and the electrolyte are greatly improved;(iii)the formed heterostructures expand the light absorption range.The photoelectric performance was further enhanced by efficient light trapping in the upright SnS_(2).The photoelectric response is higher in the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) heterostructure than in the type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructure due to more efficient charge transportation at the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) heterostructure/electrolyte interface.These results suggest that suitable type-Ⅰ and type-Ⅱ heterostructures can be developed for high-performance photodetectors and other optoelectronic devices. 展开更多
关键词 SnS_(2)/bi_(2)se_(3) SnS_(2)/bi_(2)te_(3) type-Ⅰheterostructure type-Ⅱheterostructure photoelectric response photodetector
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