Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supp...Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.展开更多
The results of experimental investigation of n-type semiconductor based on Bi2Te3 alloy were presented. This material is used in manufacture of thermoelectric coolers and electrical power generation devices. BizTe2.88...The results of experimental investigation of n-type semiconductor based on Bi2Te3 alloy were presented. This material is used in manufacture of thermoelectric coolers and electrical power generation devices. BizTe2.88Se0.12 solid solution single crystal has been grown using the Czochralski method. Monitoring of structure changes of the sample was carried out by electron microscope. The elemental composition of the studied alloy was obtained by energy dispersive spectrometry （EDS） analysis and empirical formula of the compound was established. X-ray diffraction analysis confirmed that the Bi2Te2.88Se0.12 sample was a single phase with rhombohedral structure. The behavior upon heating was studied using differential thermal analysis （DTA） technique. Changes in physical and chemical properties of materials were measured as a function of increasing temperature by thermogravimetric analysis （TGA）. The lattice parameters values obtained by X-ray powder diffraction analyses of Bi2Te2.88Se0.12 are very similar to BizTe3 lattice constants, indicating that a small portion of tellurium is replaced with selenium. The obtained values for specific electrical and thermal conductivities are in correlation with available literature data. The Vickers microhardness values are in range between HV 187 and HV 39.02 and decrease with load increasing. It is shown that very complex process of infrared thermography can be applied for characterization of thermoelectric elements and modules.展开更多
Copper-doped Bi_(2)Se_(3)(Cu_(x)Bi_(2)Se_(3))is of considerable interest for tailoring its electronic properties and inducing exotic charge correlations while retaining the unique Dirac surface states.However,the copp...Copper-doped Bi_(2)Se_(3)(Cu_(x)Bi_(2)Se_(3))is of considerable interest for tailoring its electronic properties and inducing exotic charge correlations while retaining the unique Dirac surface states.However,the copper dopants in Cu_(x)Bi_(2)Se_(3) display complex electronic behaviors and may function as either electron donors or acceptors depending on their concentration and atomic sites within the Bi_(2)Se_(3) crystal lattice.Thus,a precise understanding and control of the doping concentration and sites is of both fundamental and practical significance.Herein,we report a solution-based one-pot synthesis of Cu_(x)Bi_(2)Se_(3) nanoplates with systematically tunable Cu doping concentrations and doping sites.Our studies reveal a gradual evolution from intercalative sites to substitutional sites with increasing Cu concentrations.The Cu atoms at intercalative sites function as electron donors while those at the substitutional sites function as electron acceptors,producing distinct effects on the electronic properties of the resulting materials.We further show that Cu_(0.18)Bi_(2)Se_(3) exhibits superconducting behavior,which is not present in Bi_(2)Se_(3),highlighting the essential role of Cu doping in tailoring exotic quantum properties.This study establishes an efficient methodology for precise synthesis of Cu_(x)Bi_(2)Se_(3) with tailored doping concentrations,doping sites,and electronic properties.展开更多
基金National Natural Science Foundation of China,Grant/Award Number:62274112Guangdong Basic and Applied Basic Research Foundation,Grant/Award Number:2022A1515010929Science and Technology Plan project of Shenzhen,Grant/Award Numbers:JCYJ20220531103601003,20220810154601001。
文摘Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.
基金"Development of ecological knowledge-based advanced materials and technologies for multifunctional application" (Grant No.TR34005)"New approach to designing materials for energy conversion and storage" (Grant No.OI172060)"0-3D nanostructures for application in electronics and renewable energy sources:synthesis,characterisation and processing" (Grant No.III45007)
文摘The results of experimental investigation of n-type semiconductor based on Bi2Te3 alloy were presented. This material is used in manufacture of thermoelectric coolers and electrical power generation devices. BizTe2.88Se0.12 solid solution single crystal has been grown using the Czochralski method. Monitoring of structure changes of the sample was carried out by electron microscope. The elemental composition of the studied alloy was obtained by energy dispersive spectrometry （EDS） analysis and empirical formula of the compound was established. X-ray diffraction analysis confirmed that the Bi2Te2.88Se0.12 sample was a single phase with rhombohedral structure. The behavior upon heating was studied using differential thermal analysis （DTA） technique. Changes in physical and chemical properties of materials were measured as a function of increasing temperature by thermogravimetric analysis （TGA）. The lattice parameters values obtained by X-ray powder diffraction analyses of Bi2Te2.88Se0.12 are very similar to BizTe3 lattice constants, indicating that a small portion of tellurium is replaced with selenium. The obtained values for specific electrical and thermal conductivities are in correlation with available literature data. The Vickers microhardness values are in range between HV 187 and HV 39.02 and decrease with load increasing. It is shown that very complex process of infrared thermography can be applied for characterization of thermoelectric elements and modules.
基金the UCLA California NanoSystem Institute(CNSI)Noble Family Innovation Fund for material preparationpartial support from the National Science Foundation through grant number 2329192 for transport studies and analysis.
文摘Copper-doped Bi_(2)Se_(3)(Cu_(x)Bi_(2)Se_(3))is of considerable interest for tailoring its electronic properties and inducing exotic charge correlations while retaining the unique Dirac surface states.However,the copper dopants in Cu_(x)Bi_(2)Se_(3) display complex electronic behaviors and may function as either electron donors or acceptors depending on their concentration and atomic sites within the Bi_(2)Se_(3) crystal lattice.Thus,a precise understanding and control of the doping concentration and sites is of both fundamental and practical significance.Herein,we report a solution-based one-pot synthesis of Cu_(x)Bi_(2)Se_(3) nanoplates with systematically tunable Cu doping concentrations and doping sites.Our studies reveal a gradual evolution from intercalative sites to substitutional sites with increasing Cu concentrations.The Cu atoms at intercalative sites function as electron donors while those at the substitutional sites function as electron acceptors,producing distinct effects on the electronic properties of the resulting materials.We further show that Cu_(0.18)Bi_(2)Se_(3) exhibits superconducting behavior,which is not present in Bi_(2)Se_(3),highlighting the essential role of Cu doping in tailoring exotic quantum properties.This study establishes an efficient methodology for precise synthesis of Cu_(x)Bi_(2)Se_(3) with tailored doping concentrations,doping sites,and electronic properties.
