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拓扑绝缘体(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜制备及其电输运性能研究
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作者 张哲瑞 仇怀利 +3 位作者 周同 黄文宇 葛威锋 杨远俊 《合肥工业大学学报(自然科学版)》 CAS 北大核心 2023年第11期1580-1584,共5页
文章利用分子束外延(molecular beam epitaxy, MBE)法,在超高真空的条件下,于蓝宝石衬底上制备超薄的高质量拓扑绝缘体(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜。利用反射高能电子衍射(reflection high-energy electron diffraction, RHEED)仪、... 文章利用分子束外延(molecular beam epitaxy, MBE)法,在超高真空的条件下,于蓝宝石衬底上制备超薄的高质量拓扑绝缘体(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜。利用反射高能电子衍射(reflection high-energy electron diffraction, RHEED)仪、X射线衍射(X-ray diffraction, XRD)仪、显微共焦激光拉曼光谱仪(micro confocal laser Raman spectrometer)和X射线光电子能谱(X-ray photoelectron spectroscopy, XPS)仪对不同Sb掺杂量的样品进行表征,并获得最佳的制备参数。研究结果表明:衬底温度为460℃时Bi和Te的流量比为1∶16左右;在Sb温度为350、360、370、380℃时,可以制得高质量的(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜。利用霍尔效应测量系统测量样品的电阻率、霍尔系数、迁移率和载流子浓度;测量结果表明,(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜的载流子浓度和主要载流子类型随x的变化而发生相应的变化,并伴随着费米能级位置的调谐,随着x的增加,在x=0.53到x=0.68的掺杂过程中,费米能级从导带下移到带隙,最终进入价带,多数载流子类型也从自由电子转变成空穴,(Bi_(1-x)Sb_(x))_(2)Te_(3)实现了从n型到p型的转化。 展开更多
关键词 分子束外延(MBE) 拓扑绝缘体 (bi_(1-x)sb_(x))_(2)te_(3)薄膜 霍尔系数 载流子迁移率
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Investigation of helicity-dependent photocurrent of surface states in(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate
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作者 喻钦 俞金玲 +3 位作者 陈涌海 赖云锋 程树英 何珂 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第5期573-578,共6页
Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle... Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate is regulated by temperature,light power,excitation wavelength,the source–drain and ionic liquid top-gate voltages,and the regulation mechanisms are discussed.It is demonstrated that(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplates may provide a good platform for novel opto-spintronics devices. 展开更多
关键词 (bi_(0.7)sb_(0.3))_(2)te_(3)nanoplate helicity-dependent photocurrent circular photogalvanic effect ionic liquid gating
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具有花状形貌Lu_(x)Bi_(2-x)Te_(3)合金的制备及性能
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作者 吴芳 王伟 《河北大学学报(自然科学版)》 CAS 北大核心 2023年第1期58-66,共9页
Bi_(2)Te_(3)基材料在室温附近具有良好的热电性能,通过掺杂和纳米技术可以提高Bi_(2)Te_(3)基热电材料的热电性能,其主要由热电优值(ZT)决定.本文通过水热法成功制备了具有纳米花形貌的Lu_(x)Bi_(2-x)Te_(3)粉体,并对制备的纳米粉体分... Bi_(2)Te_(3)基材料在室温附近具有良好的热电性能,通过掺杂和纳米技术可以提高Bi_(2)Te_(3)基热电材料的热电性能,其主要由热电优值(ZT)决定.本文通过水热法成功制备了具有纳米花形貌的Lu_(x)Bi_(2-x)Te_(3)粉体,并对制备的纳米粉体分别进行XRD和SEM表征,讨论了Lu元素掺杂和乙二胺四乙酸(EDTA)用量对Lu_(x)Bi_(2-x)Te_(3)纳米花粉体形貌的影响,结果表明:Lu元素掺杂不利于纳米花形貌的形成,而EDTA用量的合适选取对于纳米花形貌的形成起着至关重要的作用.接着采用热压法将Lu_(x)Bi_(2-x)Te_(3)纳米花粉体压制成致密块体,讨论了Lu元素掺杂对Lu_(x)Bi_(2-x)Te_(3)块体热电性能的影响,结果表明:Lu掺杂和纳米花形貌有利于提高样品的功率因子同时保持较低的热导率,从而可以达到较高的ZT值;Lu_(0.2)Bi_(1.8)Te_(3)样品和Lu_(0.25)Bi_(1.75)Te_(3)样品的ZT值均高于区域熔炼商用Bi_(2)Te_(3)块体的值,并且Lu_(0.25)Bi_(1.75)Te_(3)样品的ZT值在测温范围内均高于1,其ZT值在473 K时达到了1.14,高于其他相关报道的n型块体的值.这一研究为提高Bi_(2)Te_(3)基合金热电材料的热电性能提供了一个新的途径. 展开更多
关键词 Lu_(x)bi_(2-x)te_(3)粉体 Lu元素掺杂 EDTA用量 纳米花形貌 热电性能
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室温脉冲激光原位沉积技术制备Cu_(2)(Zn_(1-x)Fe_(x))SnS_(4)/Bi_(2)S_(3)异质结及其光电性能
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作者 贾瑞彬 田静如 +3 位作者 沙震宗 夏丰金 马帅 于立岩 《青岛科技大学学报(自然科学版)》 CAS 2023年第3期30-37,共8页
采用具有磁性的Fe取代Cu_(2)ZnSnS_(4)(CZTS)中Zn组分,制备Cu_(2)(Zn_(1-x)Fe_(x))SnS_(4)(CZFTS)薄膜。将电子传输层Bi_(2)S_(3)与CZFTS耦合,采用室温脉冲激光沉积技术(RT-PLD)制备了CZFTS/Bi_(2)S_(3)异质结构。研究了Fe掺杂对于CZFT... 采用具有磁性的Fe取代Cu_(2)ZnSnS_(4)(CZTS)中Zn组分,制备Cu_(2)(Zn_(1-x)Fe_(x))SnS_(4)(CZFTS)薄膜。将电子传输层Bi_(2)S_(3)与CZFTS耦合,采用室温脉冲激光沉积技术(RT-PLD)制备了CZFTS/Bi_(2)S_(3)异质结构。研究了Fe掺杂对于CZFTS薄膜形貌、结晶度和吸光度的影响。测试了单层薄膜和异质结构的光电响应特性,实验表明与单层CZFTS薄膜相比,CZFTS/Bi_(2)S_(3)异质结在可见光区域内的光电响应速度至少提高了一个数量级,响应时间缩短至几十ms。 展开更多
关键词 Cu_(2)ZnSnS_(4)(CZTS) Cu_(2)(Zn_(1-x)Fe_(x))SnS_(4)(CZFTS) CZFTS/bi_(2)S_(3)异质结 脉冲激光沉积 光电转换 光电探测
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铈掺杂对α-Bi_(2)Mo_(3)O_(12)纳米片催化剂丙烯选择性氧化性能的影响
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作者 张鑫 杨艳艳 +3 位作者 周如金 许松泠 单书峰 曾兴业 《现代化工》 CAS CSCD 北大核心 2024年第7期145-150,共6页
采用快速微波辅助水热法制备了4种不同的Bi_(2-x)Ce_(x)Mo_(3)O_(12)纳米片催化剂。在制备过程中通过调节铈的掺杂量可以改变合成催化剂的形貌和结构,成功地提高了Bi_(2-x)Ce_(x)Mo_(3)O_(12)纳米片催化剂的比表面积。结果表明,煅烧温度... 采用快速微波辅助水热法制备了4种不同的Bi_(2-x)Ce_(x)Mo_(3)O_(12)纳米片催化剂。在制备过程中通过调节铈的掺杂量可以改变合成催化剂的形貌和结构,成功地提高了Bi_(2-x)Ce_(x)Mo_(3)O_(12)纳米片催化剂的比表面积。结果表明,煅烧温度为500℃、pH为3、掺杂量x=0.05时制备的Bi_(2-x)Ce_(x)Mo_(3)O_(12)纳米片催化剂具有最高的丙烯选择性氧化性能,丙烯转化率为42.1%,丙烯醛选择性为88.3%。Bi_(2-x)Ce_(x)Mo_(3)O_(12)纳米片催化剂的性能与结晶度呈负相关。用XPS表征了Bi_(2-x)Ce_(x)Mo_(3)O_(12)的氧迁移率,Bi_(2-x)Ce_(x)Mo_(3)O_(12)的催化性能与其氧流动性呈正相关。 展开更多
关键词 bi2-xCexMo3O12 丙烯 丙烯醛
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高性能Bi_(2)Te_(3-x)Se_(x)热电薄膜的可控生长 被引量:5
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作者 陈赟斐 魏锋 +2 位作者 王赫 赵未昀 邓元 《物理学报》 SCIE EI CAS CSCD 北大核心 2021年第20期265-271,共7页
碲化铋基材料一直被认为是室温下性能最优异的热电材料之一,也是商用热电器件首选的块体材料.然而面对柔性或高密度设备等应用需求时,薄膜热电材料比块体材料更具优势.因此,提升薄膜材料热电性能及可控制备技术至关重要.与碲化铋基块体... 碲化铋基材料一直被认为是室温下性能最优异的热电材料之一,也是商用热电器件首选的块体材料.然而面对柔性或高密度设备等应用需求时,薄膜热电材料比块体材料更具优势.因此,提升薄膜材料热电性能及可控制备技术至关重要.与碲化铋基块体材料和P型碲化铋基薄膜相比,N型碲化铋基薄膜的性能相对偏低.本工作利用磁控溅射法制备了一系列N型碲化铋薄膜,研究衬底温度和工作压强对薄膜生长模式的影响规律,从而通过溅射参数精确调控薄膜的形貌、结构和生长取向,在合适的衬底温度和工作压强的共同作用下,制备出(00l)方向层状生长的高质量致密薄膜.由于层状结构薄膜具有超高的面内载流子迁移率,该薄膜实现了大于10^(5) S/m的超高电导率.由于兼具高电导率与高Seebeck系数,该层状薄膜试样在室温下的功率因子高达42.5μW/(cm·K^(2)),克服了N型碲化铋基薄膜材料难以匹配P型碲化铋基薄膜材料的困难. 展开更多
关键词 bi_(2)te_(3x)Se_(x)薄膜 磁控溅射 热电 功率因子
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单晶Bi_(2)Te_(3-x)Se_(x)合金的鉴定与表征(英文) 被引量:1
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作者 Emina POZEGA Svetlana IVANOV +4 位作者 Zoran STEVIC Ljiljana KARANOVIC Rudolf TOMANEC Lidija GOMIDZELOVIC Ana KOSTOV 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2015年第10期3279-3285,共7页
研究基于Bi2Te3合金的n型半导体的实验制备。该材料可用于制备热电散热器和发电设备。采用Czochralski法制备Bi2Te2.88Se0.12固溶单晶体。采用电子显微镜研究样品的组织变化。利用EDS分析实验合金的成分,并确立化合物的经验分子式。XRD... 研究基于Bi2Te3合金的n型半导体的实验制备。该材料可用于制备热电散热器和发电设备。采用Czochralski法制备Bi2Te2.88Se0.12固溶单晶体。采用电子显微镜研究样品的组织变化。利用EDS分析实验合金的成分,并确立化合物的经验分子式。XRD表明Bi2Te2.88Se0.12样品为具有斜方六面体结构的单晶。利用差热分析研究合金的加热行为。利用热重分析研究材料的物理和化学性能随温度的变化。从XRD分析得到的Bi2Te2.88Se0.12晶格参数与Bi2Te3的非常相近,表明只有少部分Te被Se取代。所得的单晶的比电导率和比热导率与已有数据相符。所得维氏显微硬度为HV 187~39.02,且随着载荷增加,硬度降低。结果表明可以采用红外热成像法对热电元件和模块进行表征。 展开更多
关键词 bi_(2)te_(3) bi_(2)te_(3-x)Se_(x) 单晶 半导体 热电性能 硬度 热视成像
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相变材料Ge_(2)Sb_(2)Te_(5)的X射线辐照致变效应研究 被引量:2
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作者 何佩谣 赵越 +2 位作者 刘宇 王波 朱效立 《核技术》 CAS CSCD 北大核心 2021年第3期7-13,共7页
相变材料Ge_(2)Sb_(2)Te_(5)由于其独特的光学和电学性质,在光学记录、数据存储等方面具有广泛的应用。在航空航天、安检扫描等一些特定环境中,X射线辐照会使得相变材料发生结构和性能的变化,研究Ge_(2)Sb_(2)Te_(5)在X射线辐照下的结... 相变材料Ge_(2)Sb_(2)Te_(5)由于其独特的光学和电学性质,在光学记录、数据存储等方面具有广泛的应用。在航空航天、安检扫描等一些特定环境中,X射线辐照会使得相变材料发生结构和性能的变化,研究Ge_(2)Sb_(2)Te_(5)在X射线辐照下的结构变化就非常必要。对Si衬底上50 nm厚的Ge_(2)Sb_(2)Te_(5)薄膜材料采用X射线进行不同时间的照射,并利用高分辨率X射线光电子能谱(X-ray Photoelectron Spectroscopy,XPS)分析了Ge_(2)Sb_(2)Te_(5)的化学形态以及结构的变化。结果表明:随辐照时间的增加,Ge_(2)Sb_(2)Te_(5)薄膜材料中各元素化学状态及键合方式发生了改变,被氧化的程度也逐渐增强,表现为GeO_2的XPS峰强度增强,Sb_(2)O_(3)、TeO_2分别转变为更高金属价态氧化物Sb_(2)O_(5)和TeO_(3)。研究还确定了Ge_(2)Sb_(2)Te_(5)的极限照射时间为9 h,长时间的辐照作用,使得材料表面受到严重破坏,形成大量孔洞。通过研究Ge_(2)Sb_(2)Te_(5)在X射线辐照下的结构变化,为Ge_(2)Sb_(2)Te_(5)相变材料和器件的抗辐照机制及辐射加固技术的研究提供参考。 展开更多
关键词 同步辐射 Ge_(2)sb_(2)te_(5) x射线光电子能谱 化学键
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可见光下g-C_(3)N_(4)/In_xSb_(2-x)S_(3)异质结界面耦合效应的增强光催化活性 被引量:3
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作者 杨婷 胡新宇 +2 位作者 王军涛 杨田丽 王文磊 《Journal of Central South University》 SCIE EI CAS CSCD 2022年第5期1447-1462,共16页
本文通过原位沉积法在g-C_(3)N_(4)纳米管表面限域修饰In_(x)Sb_(2-x)S_(3)纳米片,制备了不同g-C_(3)N_(4)含量的系列异质结光催化剂(In_(x)Sb_(2-x)S_(3)-TCN)并将其用于修复含Cr(Ⅵ)废水。研究结果表明,在可见光下,In_(x)Sb_(2-x)S_(3... 本文通过原位沉积法在g-C_(3)N_(4)纳米管表面限域修饰In_(x)Sb_(2-x)S_(3)纳米片,制备了不同g-C_(3)N_(4)含量的系列异质结光催化剂(In_(x)Sb_(2-x)S_(3)-TCN)并将其用于修复含Cr(Ⅵ)废水。研究结果表明,在可见光下,In_(x)Sb_(2-x)S_(3)-TCN通过吸附和光催化还原的协同作用有效去除Cr(Ⅵ),且当g-C_(3)N_(4)含量为70 mg时,复合材料(In_(x)Sb_(2-x)S_(3)-TCN-70)表现出最优异的吸附和光催化性能。在30 mg/L的Cr(Ⅵ)水溶液中,In_(x)Sb_(2-x)S_(3)-TCN-70的平衡吸附量为12.45 mg/g。在可见光照射10 min后,Cr(Ⅵ)被还原为Cr(Ⅲ)。DRS和PL的表征结果表明,g-C_(3)N_(4)和In_(x)Sb_(2-x)S_(3)之间的界面耦合效应提高了可见光的利用率,抑制了光致载流子的复合,增强了复合材料的光催化活性。此外,经过5次Cr(Ⅵ)吸附-光还原循环后,光催化剂仍具有较高的还原活性和较好的稳定性。 展开更多
关键词 In_(x)sb_(2-x)S_(3)-TCN 光催化剂 界面耦合效应 含Cr(Ⅵ)废水 吸附 光催化还原
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Ultrahigh thermoelectric properties of p‐type Bi_(x)Sb_(2−x)Te_(3)thin films with exceptional flexibility for wearable energy harvesting
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作者 Zhuang‐Hao Zheng Yi‐Ming Zhong +9 位作者 Yi‐Liu Li Mohammad Nisar Adil Mansoor Fu Li Shuo Chen Guang‐Xing Liang Ping Fan Dongyan Xu Meng Wei Yue‐Xing Chen 《Carbon Energy》 SCIE EI CAS 2024年第8期273-284,共12页
Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supp... Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3)thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3)flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3)and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting. 展开更多
关键词 bi_(x)sb_(2−x)te_(3) electrical transport properties flexibility thermoelectric
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Enhanced thermoelectric and mechanical properties of Bi_(0.5)Sb_(1.5)Te_(3) alloy with dispersed yttrium oxide ceramic nanoparticles
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作者 Cun-Cheng Li Ming-Wei Zhang +2 位作者 Ji-Wu Xin Lei Wei Wen-Yu Zhao 《Rare Metals》 SCIE EI CAS CSCD 2024年第4期1758-1768,共11页
Reducing thermal conductivity while avoiding adverse interfacial reactions during sintering is crucial for improving the thermoelectric performance of Bi_(2)Te_(3)based composites.Inert ceramic nanoparticles are good ... Reducing thermal conductivity while avoiding adverse interfacial reactions during sintering is crucial for improving the thermoelectric performance of Bi_(2)Te_(3)based composites.Inert ceramic nanoparticles are good candidates for achieving this goal.In this study,we designed and prepared a series of p-type Bi_(0.5)Sb_(1.5)Te_(3)nanocomposites decorated with Y_(2)O_(3)ceramic nanoparticles via ball-milling dispersion and spark-plasma sintering.Owing to the chemical stability of the ceramics,no traces of atomic doping or interfacial reactions were observed.Transport measurements revealed that the Y_(2)O_(3)nanoparticles distributed along the grain boundaries acted as energy-dependent carrier-filtering centers to improve the scattering parameter and Seebeck coefficient,contributing to the elevated power factor even with a decreased electrical conductivity.Moreover,the incorporated Y_(2)O_(3)nanoparticles and various defect structures they induced effectively strengthened the phonon scattering and suppressed the lattice thermal conductivity.Consequently,a peak figure of merit(ZT)of 1.23 at 313 K was achieved for 0.4%Y_(2)O_(3)/Bi_(0.5)Sb_(1.5)Te_(3),which is 13%higher than that of the matrix.In addition,the Vickers hardness of the composite material was 35%higher than that of the matrix.This study demonstrates the effectiveness of ceramic nanoparticles in synergistic ally improving the thermoelectric and mechanical properties,which may be further extended to other thermoelectric systems. 展开更多
关键词 bi_(0.5)sb_(1.5)te_3 alloy Y_(2)O_(3) ceramic nanoparticles Microstructures Thermoelectric performance Mechanical properties
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表面修饰工程协同优化Bi_(2)Te_(3)基微型热电器件的界面性能
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作者 唐昊 白辉 +6 位作者 吕嘉南 华思恒 鄢永高 杨东旺 吴劲松 苏贤礼 唐新峰 《物理学报》 SCIE EI CAS CSCD 北大核心 2022年第16期313-324,共12页
热电器件微型化对组成热电元件的界面性能提出了更高要求,获得低的界面接触电阻率和高的界面结合强度的异质结合界面,是成功制备高性能、高可靠性Bi_(2)Te_(3)基微型热电器件的前提条件.本研究采用酸洗方法对Bi_(0.4)Sb_(1.6)Te_(3)材... 热电器件微型化对组成热电元件的界面性能提出了更高要求,获得低的界面接触电阻率和高的界面结合强度的异质结合界面,是成功制备高性能、高可靠性Bi_(2)Te_(3)基微型热电器件的前提条件.本研究采用酸洗方法对Bi_(0.4)Sb_(1.6)Te_(3)材料进行表面修饰,实现了Bi_(0.4)Sb_(1.6)Te_(3)Te3/Ni热电元件界面性能的协同优化.酸洗过程有效调控了Bi_(0.4)Sb_(1.6)Te_(3)材料的表面功函数,显著降低了Ni层与Bi_(0.4)Sb_(1.6)Te_(3)Te_(3)材料间的接触势垒,从未酸洗处理的0.22 eV降至0.02 eV,势垒的降低使界面接触电阻率从未酸洗处理的14.2μΩ·cm~2大幅降至0.22μΩ·cm~2.此外,酸洗过程还能有效调控基体表面粗糙度,在基体表面形成2—5μm的V型凹坑,产生钉扎效应,极大地增强了材料表面与Ni层的物理结合,与约50 nm厚Bi_(0.4)Sb_(1.6)Te_(3)界面扩散反应区形成的冶金结合共同作用,使界面结合强度从未酸洗处理的7.14 MPa大幅增至22.34 MPa.这种优异的界面性能在微型热电器件中得到了进一步证实,采用该工艺处理后热电元件制备的4.7×4.9 mm~2微型热电器件,在热面温度300 K下的最大制冷温差达到56.5 K,在10 K温差下最大输出功率达到882μW.该研究为实现界面性能的协同优化提供了一种新策略,并为微型热电器件的性能优化开辟了新途径. 展开更多
关键词 bi_(2)te_(3)基微型热电器件 bi_(0.4)sb_(1.6)te_(3)/Ni热电元件 表面修饰工程 界面接触电阻率 界面结合强度
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共沉淀法和聚丙烯酰胺凝胶法制备锆掺杂改性Bi_(2)O_(3)的比较研究 被引量:2
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作者 张昭 樊国栋 郑彦春 《中南大学学报(自然科学版)》 EI CAS CSCD 北大核心 2011年第9期2600-2605,共6页
以硝酸铋和硝酸锆为起始原料,分别采用共沉淀法和聚丙烯酰胺凝胶法制备系列锆掺杂改性Bi2O3的混合氧化物Bi2-xZrxO3+x/2(x=0~1.0)。采用XRD,FTIR和SEM对样品的结构及微观形貌进行分析。研究结果表明:于650℃焙烧处理后,由以上2种方法... 以硝酸铋和硝酸锆为起始原料,分别采用共沉淀法和聚丙烯酰胺凝胶法制备系列锆掺杂改性Bi2O3的混合氧化物Bi2-xZrxO3+x/2(x=0~1.0)。采用XRD,FTIR和SEM对样品的结构及微观形貌进行分析。研究结果表明:于650℃焙烧处理后,由以上2种方法制备的纯Bi2O3的主晶相均为单斜晶型α-Bi2O3,其中采用聚丙烯酰胺凝胶法及乙二醇和水混合溶剂反序滴定共沉淀法可制备出纯度较高的单斜相α-Bi2O3。锆掺杂改性制备的系列混合氧化物中,当ZrO2掺杂量(摩尔分数)为10%(x=0.2)时,反序滴定共沉淀法能实现均匀共沉淀,形成了组成为Bi1.8Zr0.2O3.1的类似立方相δ-Bi2O3的单一结构固溶体,顺序滴定共沉淀法会产生相分离,导致四方相Bi7.38Zr0.62O12.31固溶体的出现。然而,当采用聚丙烯酰胺凝胶法时,没有得到类似立方相δ-Bi2O3结构的固溶体,主相结构为单斜相α-Bi2O3以及混合部分四方相Bi7.38Zr0.62O12.31和立方相ZrO2。由此可见:采用反序滴定共沉淀法,在650℃低温及合适条件下,掺杂适量的ZrO2能稳定立方相结构的高温离子传导相δ-Bi2O3。 展开更多
关键词 bi_(2)O_(3) ZrO_(2) bi_(2-x)Zr_(x)O_((3+x)/2) 共沉淀法 聚丙烯酰胺凝胶法
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氧化铋/聚丙烯腈复合纳米纤维膜的制备及其X射线防护性能
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作者 陈晶晶 孟胜楠 +3 位作者 刘洪玲 斯阳 俞建勇 丁彬 《东华大学学报(自然科学版)》 CAS 北大核心 2023年第6期26-32,42,共8页
为探究氧化铋/聚丙烯腈复合纳米纤维膜的制备工艺及其X射线防护性能,以聚乙二醇为分散剂、聚丙烯腈为聚合物,将氧化铋均匀分散到聚合物溶液中,通过静电纺丝技术制备氧化铋/聚丙烯腈复合纳米纤维膜,研究氧化铋添加量对纤维膜微观形貌、... 为探究氧化铋/聚丙烯腈复合纳米纤维膜的制备工艺及其X射线防护性能,以聚乙二醇为分散剂、聚丙烯腈为聚合物,将氧化铋均匀分散到聚合物溶液中,通过静电纺丝技术制备氧化铋/聚丙烯腈复合纳米纤维膜,研究氧化铋添加量对纤维膜微观形貌、力学性能及X射线防护性能的影响。结果表明:以氧化铋与聚丙烯腈的质量百分比为160%构筑的前驱体溶液,经静电纺丝并于60℃干燥2 h后可获得颗粒分散均匀、纤维形貌良好的轻质(密度为0.21 g/cm^(3))纳米纤维膜,其在20~120 kV管电压下的X射线衰减效率高于50%,质量衰减系数在20 kV电压下达62.16 cm^(2)/g,具有良好的X射线防护效果,这对无铅、轻质、高屏蔽效率X射线防护材料的发展具有重要意义。 展开更多
关键词 氧化铋 聚丙烯腈 纳米纤维膜 x射线防护 静电纺丝
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Ba_(3)Bi_(2)(PO_(4))_(4)∶Tb^(3+)荧光粉的制备与性能研究
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作者 崔瑞瑞 陈倩 +1 位作者 张鑫 邓朝勇 《人工晶体学报》 CAS 北大核心 2022年第6期1069-1075,共7页
利用高温固相反应法制备出Ba_(3)Bi_(2-x)(PO_(4))_(4)∶xTb^(3+)(x=0.05,0.1,0.15,0.3,0.4,0.5)绿色荧光粉。通过X射线衍射仪、扫描电子显微镜、积分球式分光光度计和荧光光谱仪等对样品进行了分析。结果表明,所制备的样品均为Ba_(3)Bi... 利用高温固相反应法制备出Ba_(3)Bi_(2-x)(PO_(4))_(4)∶xTb^(3+)(x=0.05,0.1,0.15,0.3,0.4,0.5)绿色荧光粉。通过X射线衍射仪、扫描电子显微镜、积分球式分光光度计和荧光光谱仪等对样品进行了分析。结果表明,所制备的样品均为Ba_(3)Bi_(2)(PO_(4))_(4)纯相,Ba_(3)Bi_(1.7)(PO_(4))_(4)∶0.3Tb^(3+)的带隙估计值为4.21 eV。当激发光的波长为377 nm时,样品的发射光谱的波峰位于543 nm、584 nm和619 nm处,分别对应于Tb^(3+)的^(5)D_(4)→^(7)F_(5)、^(5)D_(4)→^(7)F_(4)和^(5)D_(4)→^(7)F_(3)的能级跃迁。随着Tb^(3+)掺杂浓度的增加,样品的发光强度先增强后减弱,当x=0.3时,发光强度最大。计算表明最近邻离子在Ba_(3)Bi_(2-x)(PO_(4))_(4)∶xTb^(3+)荧光粉的浓度猝灭中起主要作用。随着测试温度的升高,发光强度变化不大,表明样品具有优异的热稳定性能。CIE色坐标图表明所制备的样品可以被紫外光有效激发而发出绿光。 展开更多
关键词 Ba_(3)bi_(2-x)(PO_(4))_(4)∶xTb^(3+) 硅铋石结构磷酸盐 高温固相反应法 绿色荧光粉 稀土掺杂 光致发光 能级跃迁 热稳定性
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Leaf-inspired design of mesoporous Sb_(2)S_(3)/N-doped Ti_(3)C_(2)T_(x) composite towards fast sodium storage 被引量:5
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作者 Fengyi He Cheng Tang +5 位作者 Guanjia Zhu Yadong Liu Aijun Du Qiaobao Zhang Minghong Wu Haijiao Zhang 《Science China Chemistry》 SCIE EI CSCD 2021年第6期964-973,共10页
Owing to excellent conductivity and abundant surface terminals,MXene-based heterostructures have been intensively investigated as energy storage materials.However,elaborate design of the structure and composition of M... Owing to excellent conductivity and abundant surface terminals,MXene-based heterostructures have been intensively investigated as energy storage materials.However,elaborate design of the structure and composition of MXene-based hybrids towards superior electrochemical performance is still challenging.Herein,we present an ingenious leaf-inspired design for preparing a unique Sb_(2)S_(3)/nitrogen-doped Ti_(3)C_(2)T_(x)MXene(L-Sb_(2)S_(3)/Ti_(3)C_(2))hybrid.In-situ TEM observations reveal that the leaflike Sb_(2)S_(3)nanoparticles with numerous mesopores can well relieve the large volume changes via an inward pore filling mechanism with only 20%outward expansion,whereas highly conductive N-doped Ti_(3)C_(2)T_(x)nanosheets can serve as the robust mechanical support to reinforce the structural integrity of the hybrid.Benefiting from the structural and constituent merits,the L-Sb_(2)S_(3)/Ti_(3)C_(2)anode fabricated exhibits a fast sodium storage behavior in terms of outstanding rate capability(339.5 mA h g^(-1)at 2,000 mA g^(-1))and high reversible capacity at high current density(358.2 mA h g^(-1)at 1,000 mA g^(-1)after 100 cycles).Electrochemical kinetic tests and theoretical simulation further manifest that the boosted electrochemical performance mainly arises from such a unique leaf-like Sb_(2)S_(3)mesoporous nanostructure with abundant active sites,and enhanced Na^(+)adsorption energy on the heterojunction formed between Sb_(2)S_(3)nanoparticles and Ti_(3)C_2)matrix. 展开更多
关键词 sb_(2)S_(3) Ti_(3)C_(2)T_(x)Mxene mesoporous structure anode materials sodium-ion batteries
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Effect of current on the microstructure and performance of (Bi_2Te_3)_(0.2)(Sb_2Te_3)_(0.8) thermoelectric material via field activated and pressure assisted sintering
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作者 陈瑞雪 孟庆森 +1 位作者 樊文浩 王忠 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第7期9-13,共5页
(Bi_2Te_3)_(0.2)(Sb_2Te_3)_(0.8) thermoelectric material was sintered via a field activated and pressure assisted sintering(FAPAS) process.By applying different current intensity(0,60,320 A/cm^2) in the si... (Bi_2Te_3)_(0.2)(Sb_2Te_3)_(0.8) thermoelectric material was sintered via a field activated and pressure assisted sintering(FAPAS) process.By applying different current intensity(0,60,320 A/cm^2) in the sintering process,the effects of electric current on the microstructure and thermoelectric performance were investigated.This demonstrated that the application of electric current in the sintering process could significantly improve the uniformity and density of(Bi_2Te_3)_(0.2)(Sb_2Te_3)_(0.8) samples.When the current intensity was raised to 320 A/cm^2,the preferred orientation of grains was observed.Moreover,positive effects on the thermoelectric performance of applying electric current in the sintering process were also confirmed.An increase of 0.02 and 0.11 in the maximum figure of merit ZT value could be acquired by applying current of 60 and 320 A/cm^2,respectively. 展开更多
关键词 thermoelectric material bi_2te_3)_(0.2)(sb_2te_3)_(0.8) microstructure performance CURRENT field activated and pressure assisted sintering
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Filter-free self-power CdSe/Sb_(2)(S_(1-x),Se_(x))_(3)nearinfrared narrowband detection and imaging
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作者 Kanghua Li Yue Lu +7 位作者 Xuke Yang Liuchong Fu Jungang He Xuetian Lin Jiajia Zheng Shuaicheng Lu Chao Chen Jiang Tang 《InfoMat》 SCIE CAS 2021年第10期1145-1153,共9页
Accurate and clear bioimaging is crucial in the field of medical diagnosis.High-quality bioimaging requires to avoid the effects of ambient light as well as the absorption of biological tissues.Nearinfrared(NIR)narrow... Accurate and clear bioimaging is crucial in the field of medical diagnosis.High-quality bioimaging requires to avoid the effects of ambient light as well as the absorption of biological tissues.Nearinfrared(NIR)narrowband detectors located at wavelength from 650 to 900 nm can meet these requirements;thus,they are the potential solution.In this work,we construct a filter-free and self-power NIR narrowband photodetector based on the structure of n-CdSe/p-Sb_(2)(S_(1-x),Se_(x))_(3)heterojunction,and achieve a narrow spectral response at 735 nm with a full width at half-maximum of 35.3 nm in the detector.Further,the imaging characteristics of the NIR narrowband detector are explored,verifying the ability to narrowband detection and imaging.This filter-free and self-power NIR narrowband detector shows considerable promise in real-life applications. 展开更多
关键词 CDSE narrowband photodetector nearinfrared sb_(2)(S_(1-x) Se_(x))_(3)
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Room-temperature thermoelectric materials: Challenges and a new paradigm
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作者 Zhijia Han Jing-Wei Li +4 位作者 Feng Jiang Jiating Xia Bo-Ping Zhang Jing-Feng Li Weishu Liu 《Journal of Materiomics》 SCIE 2022年第2期427-436,共10页
Room-temperature thermoelectric materials provide promising solutions for energy harvesting from the environment,and deliver a maintenance-free power supply for the internet-of-things(IoTs).The currently available Bi_... Room-temperature thermoelectric materials provide promising solutions for energy harvesting from the environment,and deliver a maintenance-free power supply for the internet-of-things(IoTs).The currently available Bi_(2)Te_(3) family discovered in the 1950s,still dominates industrial applications,however,it has serious disadvantages of brittleness and the resource shortage of tellurium(1×10^(-3) ppm in the earth's crust).The novel Mg_(3)Sb_(2) family has received increasing attention as a promising alternative for room-temperature thermoelectric materials.In this review,the development timeline and fabrication strategies of the Mg 3 Sb 2 family are depicted.Moreover,an insightful comparison between the crystal-linity and band structures of Mg_(3)Sb_(2) and Bi_(2)Te_(3) is drawn.An outlook is presented to discuss challenges and new paradigms in designing room-temperature thermoelectric materials. 展开更多
关键词 Thermoelectric materials Mg_(3)sb_(2) bi_(2)te_(3) Chemical bond engineering
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