Based on Peltier effect,Bi_(2)Te_(3)-based alloy is widely used in commercial solid-state refrigeration at room temperature.The mainstream strategies for enhancing room-temperature thermoelectric performance in Bi_(2)...Based on Peltier effect,Bi_(2)Te_(3)-based alloy is widely used in commercial solid-state refrigeration at room temperature.The mainstream strategies for enhancing room-temperature thermoelectric performance in Bi_(2)Te_(3)focus on band and microstructure engineering.However,a clear understanding of the modulation of band structure and scattering through such engineering remains still challenging,because the minority carriers compensate partially the overall transport properties for the narrow-gap Bi_(2)Te_(3)at room temperature(known as the bipolar effect).The purpose of this work is to model the transport properties near and far away from the bipolar effect region for Bi_(2)Te_(3)-based thermoelectric material by a two-band model taking contributions of both majority and minority carriers into account.This is endowed by shifting the Fermi level from the conduction band to the valence band during the modeling.A large amount of data of Bi_(2)Te_(3)-based materials is collected from various studies for the comparison between experimental and predicted properties.The fundamental parameters,such as the density of states effective masses and deformation potential coefficients,of Bi_(2)Te_(3)-based materials are quantified.The analysis can help find out the impact factors(e.g.the mobility ratio between conduction and valence bands)for the improvement of thermoelectric properties for Bi_(2)Te_(3)-based alloys.This work provides a convenient tool for analyzing and predicting the transport performance even in the presence of bipolar effect,which can facilitate the development of the narrow-gap thermoelectric semiconductors.展开更多
Bi_(2)Te_(3)-based materials have drawn much attention from the thermoelectric community due to their excellent thermoelectric performance near room temperature.However,the stability of existing n-type Bi_(2)(Te,Se)_(...Bi_(2)Te_(3)-based materials have drawn much attention from the thermoelectric community due to their excellent thermoelectric performance near room temperature.However,the stability of existing n-type Bi_(2)(Te,Se)_(3)materials is still low due to the evaporation energy of Se(37.70 kJ mol^(-1))being much lower than that of Te(52.55 kJ mol^(-1)).The evaporated Se from the material causes problems in interconnects of the module while degrading the efficiency.Here,we have developed a new approach for the high-performance and stable n-type Se-free Bi_(2)Te_(3)-based materials bymaximizing the electronic transport while suppressing the phonon transport,at the same time.Spontaneously generated FeTe_(2)nanoinclusions within the matrix during the melt-spinning and subsequent spark plasma sintering is the key to simultaneous engineering of the power factor and lattice thermal conductivity.The nanoinclusions change the fermi level of the matrix while intensifying the phonon scattering via nanoparticles.With a fine-tuning of the fermi level with Cu doping in the n-type Bi_(2)Te_(3)-0.02FeTe_(2),a high power factor of∼41×10^(-4)Wm^(-1)K^(-2)with an average zT of 1.01 at the temperature range 300-470 K are achieved,which are comparable to those obtained in n-type Bi_(2)(Te,Se)_(3)materials.The proposed approach enables the fabrication of high-performance n-type Bi_(2)Te_(3)-based materials without having to include volatile Se element,which guarantees the stability of the material.Consequently,widespread application of thermoelectric devices utilizing the n-type Bi_(2)Te_(3)-based materials will become possible.展开更多
Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supp...Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.展开更多
The structure–property relationship at interfaces is difficult to probe for thermoelectric materials with a complex interfacial microstructure.Designing thermoelectric materials with a simple,structurally-uniform int...The structure–property relationship at interfaces is difficult to probe for thermoelectric materials with a complex interfacial microstructure.Designing thermoelectric materials with a simple,structurally-uniform interface provides a facile way to understand how these interfaces influence the transport properties.Here,we synthesized Bi_(2−x)Sb_(x)Te_(3)(x=0,0.1,0.2,0.4)nanoflakes using a hydrothermal method,and prepared Bi_(2−x)Sb_(x)Te_(3) thin films with predominantly(0001)interfaces by stacking the nanoflakes through spin coating.The influence of the annealing temperature and Sb content on the(0001)interface structure was systematically investigated at atomic scale using aberration-corrected scanning transmission electron microscopy.Annealing and Sb doping facilitate atom diffusion and migration between adjacent nanoflakes along the(0001)interface.As such it enhances interfacial connectivity and improves the electrical transport properties.Interfac reactions create new interfaces that increase the scattering and the Seebeck coefficient.Due to the simultaneous optimization of electrical conductivity and Seebeck coefficient,the maximum power factor of the Bi_(1.8)Sb_(0.2)Te_(3) nanoflake films reaches 1.72 mW m^(−1)K^(−2),which is 43%higher than that of a pure Bi_(2)Te_(3) thin film.展开更多
Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle...Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate is regulated by temperature,light power,excitation wavelength,the source–drain and ionic liquid top-gate voltages,and the regulation mechanisms are discussed.It is demonstrated that(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplates may provide a good platform for novel opto-spintronics devices.展开更多
The results of experimental investigation of n-type semiconductor based on Bi2Te3 alloy were presented. This material is used in manufacture of thermoelectric coolers and electrical power generation devices. BizTe2.88...The results of experimental investigation of n-type semiconductor based on Bi2Te3 alloy were presented. This material is used in manufacture of thermoelectric coolers and electrical power generation devices. BizTe2.88Se0.12 solid solution single crystal has been grown using the Czochralski method. Monitoring of structure changes of the sample was carried out by electron microscope. The elemental composition of the studied alloy was obtained by energy dispersive spectrometry （EDS） analysis and empirical formula of the compound was established. X-ray diffraction analysis confirmed that the Bi2Te2.88Se0.12 sample was a single phase with rhombohedral structure. The behavior upon heating was studied using differential thermal analysis （DTA） technique. Changes in physical and chemical properties of materials were measured as a function of increasing temperature by thermogravimetric analysis （TGA）. The lattice parameters values obtained by X-ray powder diffraction analyses of Bi2Te2.88Se0.12 are very similar to BizTe3 lattice constants, indicating that a small portion of tellurium is replaced with selenium. The obtained values for specific electrical and thermal conductivities are in correlation with available literature data. The Vickers microhardness values are in range between HV 187 and HV 39.02 and decrease with load increasing. It is shown that very complex process of infrared thermography can be applied for characterization of thermoelectric elements and modules.展开更多
基金National Natural Science Foundation of China(T2125008,92263108,92163203,52102292,52003198)Shanghai Rising-Star Program(23QA1409300)Innovation Program of Shanghai Municipal Education Commission(2021-01-07-00-07-E00096)。
文摘Based on Peltier effect,Bi_(2)Te_(3)-based alloy is widely used in commercial solid-state refrigeration at room temperature.The mainstream strategies for enhancing room-temperature thermoelectric performance in Bi_(2)Te_(3)focus on band and microstructure engineering.However,a clear understanding of the modulation of band structure and scattering through such engineering remains still challenging,because the minority carriers compensate partially the overall transport properties for the narrow-gap Bi_(2)Te_(3)at room temperature(known as the bipolar effect).The purpose of this work is to model the transport properties near and far away from the bipolar effect region for Bi_(2)Te_(3)-based thermoelectric material by a two-band model taking contributions of both majority and minority carriers into account.This is endowed by shifting the Fermi level from the conduction band to the valence band during the modeling.A large amount of data of Bi_(2)Te_(3)-based materials is collected from various studies for the comparison between experimental and predicted properties.The fundamental parameters,such as the density of states effective masses and deformation potential coefficients,of Bi_(2)Te_(3)-based materials are quantified.The analysis can help find out the impact factors(e.g.the mobility ratio between conduction and valence bands)for the improvement of thermoelectric properties for Bi_(2)Te_(3)-based alloys.This work provides a convenient tool for analyzing and predicting the transport performance even in the presence of bipolar effect,which can facilitate the development of the narrow-gap thermoelectric semiconductors.
基金supported by Nano·Material Technology Development Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Science and ICT(2022M3H4A1A04076667)
文摘Bi_(2)Te_(3)-based materials have drawn much attention from the thermoelectric community due to their excellent thermoelectric performance near room temperature.However,the stability of existing n-type Bi_(2)(Te,Se)_(3)materials is still low due to the evaporation energy of Se(37.70 kJ mol^(-1))being much lower than that of Te(52.55 kJ mol^(-1)).The evaporated Se from the material causes problems in interconnects of the module while degrading the efficiency.Here,we have developed a new approach for the high-performance and stable n-type Se-free Bi_(2)Te_(3)-based materials bymaximizing the electronic transport while suppressing the phonon transport,at the same time.Spontaneously generated FeTe_(2)nanoinclusions within the matrix during the melt-spinning and subsequent spark plasma sintering is the key to simultaneous engineering of the power factor and lattice thermal conductivity.The nanoinclusions change the fermi level of the matrix while intensifying the phonon scattering via nanoparticles.With a fine-tuning of the fermi level with Cu doping in the n-type Bi_(2)Te_(3)-0.02FeTe_(2),a high power factor of∼41×10^(-4)Wm^(-1)K^(-2)with an average zT of 1.01 at the temperature range 300-470 K are achieved,which are comparable to those obtained in n-type Bi_(2)(Te,Se)_(3)materials.The proposed approach enables the fabrication of high-performance n-type Bi_(2)Te_(3)-based materials without having to include volatile Se element,which guarantees the stability of the material.Consequently,widespread application of thermoelectric devices utilizing the n-type Bi_(2)Te_(3)-based materials will become possible.
基金National Natural Science Foundation of China,Grant/Award Number:62274112Guangdong Basic and Applied Basic Research Foundation,Grant/Award Number:2022A1515010929Science and Technology Plan project of Shenzhen,Grant/Award Numbers:JCYJ20220531103601003,20220810154601001。
文摘Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.
基金supported by the National Natural Science Foundation of China(52272235)supported by the Fundamental Research Funds for the Central Universities(WUT:2021III016GX).
文摘The structure–property relationship at interfaces is difficult to probe for thermoelectric materials with a complex interfacial microstructure.Designing thermoelectric materials with a simple,structurally-uniform interface provides a facile way to understand how these interfaces influence the transport properties.Here,we synthesized Bi_(2−x)Sb_(x)Te_(3)(x=0,0.1,0.2,0.4)nanoflakes using a hydrothermal method,and prepared Bi_(2−x)Sb_(x)Te_(3) thin films with predominantly(0001)interfaces by stacking the nanoflakes through spin coating.The influence of the annealing temperature and Sb content on the(0001)interface structure was systematically investigated at atomic scale using aberration-corrected scanning transmission electron microscopy.Annealing and Sb doping facilitate atom diffusion and migration between adjacent nanoflakes along the(0001)interface.As such it enhances interfacial connectivity and improves the electrical transport properties.Interfac reactions create new interfaces that increase the scattering and the Seebeck coefficient.Due to the simultaneous optimization of electrical conductivity and Seebeck coefficient,the maximum power factor of the Bi_(1.8)Sb_(0.2)Te_(3) nanoflake films reaches 1.72 mW m^(−1)K^(−2),which is 43%higher than that of a pure Bi_(2)Te_(3) thin film.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62074036,61674038,and 11574302)the Foreign Cooperation Project of Fujian Province,China(Grant No.2023I0005)+2 种基金the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics(Grant No.KF202108)the National Key Research and Development Program of China(Grant No.2016YFB0402303)the Foundation of Fujian Provincial Department of Industry and Information Technology of China(Grant No.82318075)。
文摘Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate is regulated by temperature,light power,excitation wavelength,the source–drain and ionic liquid top-gate voltages,and the regulation mechanisms are discussed.It is demonstrated that(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplates may provide a good platform for novel opto-spintronics devices.
基金"Development of ecological knowledge-based advanced materials and technologies for multifunctional application" (Grant No.TR34005)"New approach to designing materials for energy conversion and storage" (Grant No.OI172060)"0-3D nanostructures for application in electronics and renewable energy sources:synthesis,characterisation and processing" (Grant No.III45007)
文摘The results of experimental investigation of n-type semiconductor based on Bi2Te3 alloy were presented. This material is used in manufacture of thermoelectric coolers and electrical power generation devices. BizTe2.88Se0.12 solid solution single crystal has been grown using the Czochralski method. Monitoring of structure changes of the sample was carried out by electron microscope. The elemental composition of the studied alloy was obtained by energy dispersive spectrometry （EDS） analysis and empirical formula of the compound was established. X-ray diffraction analysis confirmed that the Bi2Te2.88Se0.12 sample was a single phase with rhombohedral structure. The behavior upon heating was studied using differential thermal analysis （DTA） technique. Changes in physical and chemical properties of materials were measured as a function of increasing temperature by thermogravimetric analysis （TGA）. The lattice parameters values obtained by X-ray powder diffraction analyses of Bi2Te2.88Se0.12 are very similar to BizTe3 lattice constants, indicating that a small portion of tellurium is replaced with selenium. The obtained values for specific electrical and thermal conductivities are in correlation with available literature data. The Vickers microhardness values are in range between HV 187 and HV 39.02 and decrease with load increasing. It is shown that very complex process of infrared thermography can be applied for characterization of thermoelectric elements and modules.
