A novel p-channel selected n-channel divided bit-line NOR(PNOR) flash memory,which features low programming current,low power,high access current,and slight bit-line disturbance,is proposed.By using the source induced...A novel p-channel selected n-channel divided bit-line NOR(PNOR) flash memory,which features low programming current,low power,high access current,and slight bit-line disturbance,is proposed.By using the source induced band-to-band hot electron injection (SIBE) to perform programming and dividing the bit-line to the sub-bit-lines,the programming current and power can be reduced to 3.5μA and 16.5μW with the sub-bit-line width equaling to 128,and a read current of 60μA is obtained.Furthermore,the bit-line disturbance is also significantly alleviated.展开更多
The crystallization characteristics of a ubiquitous T-shaped phase change memory(PCM) cell, under SET current pulse and very small disturb current pulse, have been investigated by finite element modelling. As analyzed...The crystallization characteristics of a ubiquitous T-shaped phase change memory(PCM) cell, under SET current pulse and very small disturb current pulse, have been investigated by finite element modelling. As analyzed in this paper, the crystallization region under SET current pulse presents first on the corner of the bottom electron contact(BEC) and then promptly forms a filament shunting down the amorphous phase to achieve the low-resistance state, whereas the tiny disturb current pulse accelerates crystallization at the axis of symmetry in the phase change material. According to the different crystallization paths, a new structure of phase change material layer is proposed to improve the data retention for PCM without impeding SET operation.This structure only requires one or two additional process steps to dope nitrogen element in the center region of phase change material layer to increase the crystallization temperature in this confined region. The electrical-thermal characteristics of PCM cells with incremental doped radius have been analyzed and the best performance is presented when the doped radius is equal to the radius of the BEC.展开更多
目的探讨奥拉西坦对于脑损伤继发的神经功能缺失和记忆、智能障碍的临床疗效和安全性。方法240例颅脑损伤和颅脑手术后病人随机分为奥拉西坦治疗和对照组(吡拉西坦)。以N IH SS计分评定神经功能缺失,以M M SE计分评定记忆与智能障碍,并...目的探讨奥拉西坦对于脑损伤继发的神经功能缺失和记忆、智能障碍的临床疗效和安全性。方法240例颅脑损伤和颅脑手术后病人随机分为奥拉西坦治疗和对照组(吡拉西坦)。以N IH SS计分评定神经功能缺失,以M M SE计分评定记忆与智能障碍,并比较两组的GCS计分,分析比较它们的治疗效果;观察两组的不良反应并进行心电图和实验室检查以了解其安全性。结果奥拉西坦对NIH SS和M M SE改善程度明显优于吡拉西坦,对GCS的改善二者没有明显差异。两组间无药物相关不良反应发生。结论奥拉西坦和吡拉西坦均可以改善脑损伤继发的神经功能缺失、记忆与智能障碍,但前者优于后者,对改善G CS二者相当,均具有很高的安全性。展开更多
文摘A novel p-channel selected n-channel divided bit-line NOR(PNOR) flash memory,which features low programming current,low power,high access current,and slight bit-line disturbance,is proposed.By using the source induced band-to-band hot electron injection (SIBE) to perform programming and dividing the bit-line to the sub-bit-lines,the programming current and power can be reduced to 3.5μA and 16.5μW with the sub-bit-line width equaling to 128,and a read current of 60μA is obtained.Furthermore,the bit-line disturbance is also significantly alleviated.
基金support of the"Strategic Priority Research Program"of the Chinese Academy of Sciences(No.XDA09020402)the National Integrate Circuit Research Program of China(No.2009ZX02023-003)+2 种基金the National Natural Science Foundation of China(Nos.61261160500,61376006,61401444,61504157)the Science and Technology Council of Shanghai(Nos.14DZ2294900,15DZ2270900,14ZR1447500)the National Natural Science Foundation of China(61874178)
文摘The crystallization characteristics of a ubiquitous T-shaped phase change memory(PCM) cell, under SET current pulse and very small disturb current pulse, have been investigated by finite element modelling. As analyzed in this paper, the crystallization region under SET current pulse presents first on the corner of the bottom electron contact(BEC) and then promptly forms a filament shunting down the amorphous phase to achieve the low-resistance state, whereas the tiny disturb current pulse accelerates crystallization at the axis of symmetry in the phase change material. According to the different crystallization paths, a new structure of phase change material layer is proposed to improve the data retention for PCM without impeding SET operation.This structure only requires one or two additional process steps to dope nitrogen element in the center region of phase change material layer to increase the crystallization temperature in this confined region. The electrical-thermal characteristics of PCM cells with incremental doped radius have been analyzed and the best performance is presented when the doped radius is equal to the radius of the BEC.
文摘目的探讨奥拉西坦对于脑损伤继发的神经功能缺失和记忆、智能障碍的临床疗效和安全性。方法240例颅脑损伤和颅脑手术后病人随机分为奥拉西坦治疗和对照组(吡拉西坦)。以N IH SS计分评定神经功能缺失,以M M SE计分评定记忆与智能障碍,并比较两组的GCS计分,分析比较它们的治疗效果;观察两组的不良反应并进行心电图和实验室检查以了解其安全性。结果奥拉西坦对NIH SS和M M SE改善程度明显优于吡拉西坦,对GCS的改善二者没有明显差异。两组间无药物相关不良反应发生。结论奥拉西坦和吡拉西坦均可以改善脑损伤继发的神经功能缺失、记忆与智能障碍,但前者优于后者,对改善G CS二者相当,均具有很高的安全性。
