Realizing high-performance Zn-ion batteries by a reduced graphene oxide block layer at room and low temperatures

Rechargeable aqueous Zn-ion batteries (ZIBs) have attracted great attention due to their costeffectiveness,high safety,and environmental friendliness.However,some issues associated with poor structural instability of cathode materials and fast self-discharge hinder the further development of ZIBs.Herein,a new configuration is introduced by placing a reduced graphene oxide film as a block layer between the separator and the V2O5·nH2O cathode.This layer prevents the free diffusion of dissolved active materials to the anode and facilitates the transport of Zn ion and electrons,largely improving the cyclic stability and alleviating the self-discharge.Accordingly,the optimized battery delivers a remarkable capacity of 191 mAh g^-1 after 500 cycles at 2 A g^-1.Moreover,a high capacity of 106 mAh g^-1 is achieved after 100 cycles at-20℃.The strategy proposed is expected to be applicable to other electrode systems,thus offering a new approach to circumvent the critical challenges facing aqueous batteries.

Block Layering Approach in TAST Codes

Threaded Algebraic Space Time (TAST) codes developed by Gamal et al. is a powerful class of space time codes in which different layers are combined and separated by appropriate Diophantine number . In this paper we introduce a technique of block layering in TAST codes, in which a series of layers (we call it Block layers) has more than one transmit antenna at the same time instant. As a result we use fewer layers (Diophantine numbers) for the four transmit antennas scheme, which enhances the coding gain of our proposed scheme. In each block layer we incorporate Alamouti’s transmit diversity scheme which decreases the decoding complexity. The proposed code achieves a normalized rate of 2 symbol/s. Simulation result shows that this type of codes outperforms TAST codes in certain scenarios.

Greatly enhanced corrosion/wear resistances of epoxy coating for Mg alloy through a synergistic effect between functionalized graphene and insulated blocking layer

The poor corrosion and wear resistances of Mg alloys seriously limit their potential applications in various industries.The conventional epoxy coating easily forms many intrinsic defects during the solidification process,which cannot provide sufficient protection.In the current study,we design a double-layer epoxy composite coating on Mg alloy with enhanced anti-corrosion/wear properties,via the spin-assisted assembly technique.The outer layer is functionalized graphene(FG)in waterborne epoxy resin(WEP)and the inner layer is Ce-based conversion(Ce)film.The FG sheets can be homogeneously dispersed within the epoxy matrix to fill the intrinsic defects and improve the barrier capability.The Ce film connects the outer layer with the substrate,showing the transition effect.The corrosion rate of Ce/WEP/FG composite coating is 2131 times lower than that of bare Mg alloy,and the wear rate is decreased by~90%.The improved corrosion resistance is attributed to the labyrinth effect(hindering the penetration of corrosive medium)and the obstruction of galvanic coupling behavior.The synergistic effect derived from the FG sheet and blocking layer exhibits great potential in realizing the improvement of multi-functional integration,which will open up a new avenue for the development of novel composite protection coatings of Mg alloys.

Optical and electrical characteristics of GaN vertical light emitting diode with current block layer

A GaN vertical light emitting diode（LED）with a current block layer（CBL）was investigated.Vertical LEDs without a CBL,with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated.Optical and electrical tests were carried out.The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are 40.6%and 60.7%higher than that of vertical LEDs without a CBL at 350 mA,respectively.The efficiencies of vertical LEDs without a CBL,with a non-ohmic contact CBL and with a silicon dioxide CBL drop to 72%,78%and 85.5%of their maximum efficiency at 350 mA,respectively. Moreover,vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability.

Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

InGaN based light-emitting diodes （LEDs） with different electron blocking layers have been numerically investi- gated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells （MQWs）.

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer

Blue InGaN light-emitting diodes （LEDs） with a conventional electron blocking layer （EBL）, a common n-A1GaN hole blocking layer （HBL）, and an n-A1GaN HBL with gradual A1 composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency （IQE）. The results indicate that LEDs with an n-AIGaN HBL with gradual AI composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conven tional p-A1GaN EBL or a common n-A1GaN HBL. Meanwhile, the efficiency droop is alleviated when an n-A1GaN HBL with gradual A1 composition is used.

Improved charge trapping flash device with Al_2O_3 /HfSiO stack as blocking layer

In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon- type （MONOS） memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase （P/E） speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.

Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer

A sawtooth-shaped electron blocking layer is proposed to improve the performance of light-emitting diodes （LEDs）. The energy band diagram, the electrostatic field in the quantum well, the carrier concentration, the electron leakage, and the internal quantum efficiency are systematically studied. The simulation results show that the LED with a sawtooth-shaped electron blocking layer possesses higher output power and a smaller efficiency droop than the LED with a conventional A1GaN electron blocking layer, which is because the electron confinement is enhanced and the hole injection efficiency is improved by the appropriately modified electron blocking layer energy band.

Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers

A new epitaxial structure of AlGaInP-based light-emitting diode（LED） with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide（ITO） and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer（CBL）, respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.

On the Kinematic Characteristics and Dynamic Process of Boundary faults of the Nansha Ultra-crust Layer-Block

Abstract The Nansha ultra-crust layer-block is confined by ultra-crustal boundary faults of distinctive features, bordering the Kangtai-Shuangzi-Xiongnan extensional faulted zone on the north, the Baxian-Baram-Yoca-Cuyo nappe faulted zone on the south, the Wan'an-Natuna strike-slip tensional faulted zone on the west and the Mondoro-Panay strike-slip compressive faulted zone on the east. These faults take the top of the Nansha asthenosphere as their common detachmental surface. The Cenozoic dynamic process of the ultra-crust layer-block can be divided into four stages: K2-E21, during which the northern boundary faults extended, this ultra-crust layer-block was separated from the South China-Indosinian continental margin, the Palaeo-South China Sea subducted southwards and the Sibu accretion wedge was formed; E22-E31, during which the Southwest sub-sea basin extended and orogeny was active due to the collision of the Sibu accretion wedge; E32-N11, during which the central sub-sea basin extended, the Miri accretion wedge was formed and “A-type” subduction of the southern margin of the north Balawan occurred; N12-the present, during which large-scale thrusting and napping of the boundary faults in the south and mountain-building have taken place and the South China Sea stopped its extension.

Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

The optical and physical properties of an InGaN light-emitting diode （LED） with a specific design of a staggered AlGaN electron-blocking layer （EBL） are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence （EL） intensity, internal quantum efficiency （IQE）, and the output power are simulated. The results reveal that this specific design has a remarkable improvement in optical performance compared with the design of a conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of the LED could be one of the main reasons for these improvements.

Layer-block tectonics of Cenozoic basements and formation of intra-plate basins in Nansha micro-plate, southern South China Sea

Layer-block tectonics （LBT） concept, with the core of pluralistic geodynamic outlook and multilayer-sliding tectonic outlook, is one of new keys to study 3-dimensional solid and its 4-dimensional evolution history of global tectonic system controlled by global geodynamics system. The LBT concept is applied to study the lithospheric tectonics of the southern South China Sea （SCS）. Based on the analysis of about 30 000 km of geophysical and geological data, some layer-blocks in the Nansha micro-plate can be divided as Nansha ultra-crustal layer-block, Zengmu crustal layer-block, Nanwei （Rifleman bank）-Andu （Ardasier bank） and Liyue （Reed bank） North Palawan crustal layer-blocks, Andu-Bisheng and Liyue-Banyue basemental layer-blocks. The basic characteristics of the basemental layer-blocks have been dicussed, and three intra-plate basin groups are identified. The intra-plate basins within Nansha micro-plate can be divided into three basin groups of Nanwei- Andu, Feixin-Nanhua, and Liyue-North Palawan based on the different geodynamics. In the light of pluralistic geodynamic concept, the upheaving force induced by the mid-crust plastic layer is proposed as the main dynamical force which causes the formation of the intra-plate basins within the Nansha micro-plate. Finally, models of a face-to-face dip-slip detachment of basemental layerblock and a unilateral dip-slip-detachment of basemental layer-block are put forward for the forming mechanisms of the Nanwei Andu and Liyue-North Palawan intra-plate basin groups, respectively.

Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer

The conventional stationary Al content Al GaN electron blocking layer(EBL) in ultraviolet light-emitting diode(UV LED) is optimized by employing a linearly graded Al Ga N inserting layer which is 2.0 nm Al_(0.3) Ga_(0.7) N/5.0 nm Alx Ga_(1-x) N/8.0 nm Al_(0.3) Ga_(0.7) N with decreasing value of x. The results indicate that the internal quantum efficiency is significantly improved and the efficiency droop is mitigated by using the proposed structure. These improvements are attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes,which result in an increased hole injection efficiency and a decreased electron leakage into the p-type region. In addition,the linearly graded AlGaN inserting layer can generate more holes in EBL due to the polarization-induced hole doping and a tunneling effect probably occurs to enhance the hole transportation to the active regions, which will be beneficial to the radiative recombination.

Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits

In GaN-based green light-emitting diodes（LEDs） with and without Mg-preflow before the growth of p-Al GaN electron blocking layer（EBL） are investigated experimentally.A higher Mg doping concentration is achieved in the EBL after Mg-preflow treatment,effectively alleviating the commonly observed efficiency collapse and electrons overflowing at cryogenic temperatures.However,unexpected decline in quantum efficiency is observed after Mg-preflow treatment at room temperature.Our conclusions are drawn such that the efficiency decline is probably the result of different emission positions.Higher Mg doping concentration in the EBL after Mg-preflow treatment will make it easier for a hole to be injected into multiple quantum wells with emission closer to pGaN side through the（8-plane rather than the V-shape pits,which is not favorable to luminous efficiency due to the preferred occurrence of accumulated strain relaxation and structural defects in upper QWs closer to p-GaN.Within this framework,apparently disparate experimental observations regarding electroluminescence properties,in this work,are well reconciled.

Comparison of nitride-based dual-wavelength lightemitting diodes with an InAlN electron-blocking layer and with p-type doped barriers

The advantages of nitride-based dual-wavelength light-emitting diodes （LEDs） with an InA1N electron blocking layer （EBL） are studied. The emission spectra, carrier concentration in the quantum wells （QWs）, energy band and internal quantum efficiency （IQE） are investigated. The simulation results indicate that an LED with an InA1N EBL performs better over a conventional LED with an A1GaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.

Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

The performance of InGaN blue light-emitting diodes（LEDs） with different kinds of electron-blocking layers is investigated numerically.We compare the simulated emission spectra,electron and hole concentrations,energy band diagrams,electrostatic fields,and internal quantum efficiencies of the LEDs.The LED using AlGaN with gradually increasing Al content from 0% to 20% as the electron-blocking layer（EBL） has a strong spectrum intensity,mitigates efficiency droop,and possesses higher output power compared with the LEDs with the other three types of EBLs.These advantages could be because of the lower electron leakage current and more effective hole injection.The optical performance of the specifically designed LED is also improved in the case of large injection current.

Study on characteristics of a double-conductible channel organic thin-film transistor with an ultra-thin hole-blocking layer

The properties of top-contact organic thin-film transistors （TC-OTFTs） using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline （BCP） as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers arc limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS = --20 V showed excellent hole mobility μFE and threshold voltage VTH of 0.58 cm^2/（V-s） and -4.6 V, respectively.

Generation of Nonlinear Force Driven Blocks from Skin Layer Interaction of Petawatt-Picosecond Laser Pulses for ICF

The discovery of the essential difference of maximum ion energy for TW-pslaser plasma interaction compared with, the 100 ns laser pulses led to the theory of a skin layermodel where the control of prepulses suppressed the usual relativistic self-focusing. The subsequentgeneration of two nonlinear force driven blocks has been demonstrated experimentally and inextensive numerical studies where one block moves against the laser light and the other block intothe irradiated target. These blocks of nearly solid state density DT plasma correspond to ion beamcurrent densities exceeding 10^(10) A/cm^2 where the ion velocity can be chosen up to highlyrelativistic values. Using the results of the expected ignition of DT fuel by light ion beams, aself-sustained fusion reaction front may be generated even into uncompressed solid DT fuel similarto the Nuckolls-Wood scheme where 10 kJ laser pulses produce 100 MJ fusion energy. This new andsimplified scheme of laser-ICF needs and optimisation of the involved parameters.

Geological Characteristics of Potassium-Bearing Salt Layers in the Well Block Quele of the Kuqa Depression and their Significance

Potash is one of the long-term scare deposits in China,and potash prospecting has long been listed as a key brainstorm project for our nation and geological prospecting units.There have been considerable studies in search for potash deposits in the Kuqa depression of the Tarim basin(Jackson et al.,1991;Gemmer et al.,2004;Vendeville,2005;Vendeville and Jackson,1992a,1992b),