3D reconstruction and defect pattern recognition of bonding wire based on stereo vision

Non-destructive detection of wire bonding defects in integrated circuits(IC)is critical for ensuring product quality after packaging.Image-processing-based methods do not provide a detailed evaluation of the three-dimensional defects of the bonding wire.Therefore,a method of 3D reconstruction and pattern recognition of wire defects based on stereo vision,which can achieve non-destructive detection of bonding wire defects is proposed.The contour features of bonding wires and other electronic components in the depth image is analysed to complete the 3D reconstruction of the bonding wires.Especially to filter the noisy point cloud and obtain an accurate point cloud of the bonding wire surface,a point cloud segmentation method based on spatial surface feature detection(SFD)was proposed.SFD can extract more distinct features from the bonding wire surface during the point cloud segmentation process.Furthermore,in the defect detection process,a directional discretisation descriptor with multiple local normal vectors is designed for defect pattern recognition of bonding wires.The descriptor combines local and global features of wire and can describe the spatial variation trends and structural features of wires.The experimental results show that the method can complete the 3D reconstruction and defect pattern recognition of bonding wires,and the average accuracy of defect recognition is 96.47%,which meets the production requirements of bonding wire defect detection.

基于视觉技术的Wire Bonding中焊点质量的自动检测方法

用WireBonder(引线键合机)进行键合后的芯片,其焊点可能会出现位置偏移、断线和线尾(Pigtail)过长等缺陷。该文针对上述几种质量问题,利用WireBonder现有的硬件,运用图象处理及模式识别技术,提出了一套自动视觉检测的方法。实验表明,该方法所需硬件低廉,操作方便,能很好地检测WireBonding中焊点的质量。

Factors governing heat affected zone during wire bonding

In the wire bonding process of microelectronic packaging,heat affect zone(HAZ)is an important factor governing the loop profile of bonding.The height of loop is affected by the length of the HAZ.Factors governing the HAZ were studied.To investigate this relationship,experiments were done for various sizes of wire and free air ball(FAB).Electric flame-off(EFO)current, EFO time,EFO gap and recrystallization were also studied.The results show that as the size of FAB becomes larger,the length of HAZ increases.With the increase of EFO current and time,the length of HAZ becomes longer.When FAB forms at the same parameter the length of HAZ becomes shorter with the high temperature of recrystallization.

Mechanism of microweld formation and breakage during Cu-Cu wire bonding investigated by molecular dynamics simulation

Currently,wire bonding is the most popular first-level interconnection technology used between the die and package terminals,but even with its long-term and excessive usage,the mechanism of wire bonding has not been completely evaluated.Therefore,fundamental research is still needed.In this study,the mechanism of microweld formation and breakage during Cu-Cu wire bonding was investigated by using molecular dynamics simulation.The contact model for the nanoindentation process between the wire and substrate was developed to simulate the contact process of the Cu wire and Cu substrate.Elastic contact and plastic instability were investigated through the loading and unloading processes.Moreover,the evolution of the indentation morphology and distributions of the atomic stress were also investigated.It was shown that the loading and unloading curves do not coincide,and the unloading curve exhibited hysteresis.For the substrate,in the loading process,the main force changed from attractive to repulsive.The maximum von Mises stress increased and shifted from the center toward the edge of the contact area.During the unloading process,the main force changed from repulsive to attractive.The Mises stress reduced first and then increased.Stress concentration occurs around dislocations in the middle area of the Cu wire.

Temperature effect in thermosonic wire bonding

The temperature effect on bonding strength and ultrasonic transmission in a PZT transducer system was investigated. The results show that, the temperature change influences the material features of the bonding interface, such as elastic modulus, tensile strength of gold ball and Ag substrate, which results in different bonding strengths. Moreover, the temperature change also influences the impedance and dissipative ultrasonic energy in the PZT system. The current signal of PZT transducer was analyzed by join time-frequency analysis, which can reveal the current change in a bonding process more clearly and completely. The analysis shows that the bonding parameters influence mutually. These results can help build some criteria for parameter match and optimization in wire bonding processes.

Bonding mechanism of ultrasonic wedge bonding of copper wire on Au/Ni/Cu substrate

The ultrasonic wedge bonding with d25 μm copper wire was achieved on Au/Ni plated Cu substrate at ambient temperature.Ultrasonic wedge bonding mechanism was investigated by using SEM/EDX,pull test,shear test and microhardness test.The results show that the thinning of the Au layer occurs directly below the center of the bonding tool with the bonding power increasing.The interdiffusion between copper wire and Au metallization during the wedge bonding is assumed negligible,and the wedge bonding is achieved by wear action induced by ultrasonic vibration.The ultrasonic power contributes to enhance the deformation of copper wire due to ultrasonic softening effect which is then followed by the strain hardening of the copper wedge bonding.

New Type Gold Bonding Wire

The influences of additive elements on properties of gold wire and the technology of homogeneously adding those elements to gold matrix were studied. A BJ-type gold bonding wire for automatic bonders was developed, which has high bond strength and stable uniform mechanical properties and is capable of forming good spherical shape of melting-ball observed by SEM. The bonding wire is fully suitable to the requirements of the automatic bonding technology and satisfies the performance requirement of IC products.

Effect of Conduction Pre-heating in Au-Al Thermosonic Wire Bonding

This paper presents the recent study by investigating the vital responses of wire bonding with the application of conduction pre-heating. It is observed through literature reviews that, the effect of pre-heating has not been completely explored to enable the successful application of pre-heating during wire bonding. The aim of wire bonding is to form quality and reliable solid-state bonds to interconnect metals such as gold wires to metalized pads deposited on silicon integrated circuits. Typically, there are 3 main wire bonding techniques applied in the industry;Thermo-compression, Ultrasonic and Thermosonic. This experiment utilizes the most common and widely used platform which is thermosonic bonding. This technique is explored with the application of conduction pre-heating along with heat on the bonding site, ultrasonic energy and force on an Au-Al system. Sixteen groups of bonding conditions which include eight hundred data points of shear strength at various temperature settings were compared to establish the relationship between bonding strength and the application of conduction pre-heating. The results of this study will clearly indicate the effects of applied conduction pre-heating towards bonding strength which may further produce a robust wire bonding system.

Wire Bonding Using Offline Programming Method

Manual process of creating bonding diagram is known to be time consuming and error prone. In comparison, offline programming (OLP) provides a much more viable option to reduce the wire bonding creation time and error. OLP is available in two versions, i.e., vendor specific OLP and direct integration offline pro- gramming (Di-OLP). Both versions utilize the bonding diagram and computer aided design data to speed up bonding program creation. However, the newly proposed Di-OLP is more flexible as it can be used to create bonding program for multiple machine platforms in microelectronics industry. Some special features of Di-OLP method are presented. The application of generic OLP however, is applicable to machines that recognize ASCII text file. The user needs to know the data format accepted by machine and convert the data accordingly to suit its application for different machine platforms. Di-OLP is also a practical method to replace the time consuming manual method in production line.

New Generation Semi-Automatic Thermosonic Wire Bonder

The physical and technological aspects of wire ball-wedge bonding in the assembly of integrated circuits are considered.The video camera and the pattern recognition system(PRS)of new bonder helps to provide accurate positioning of the bonding tool on the chip pads of integrated circuits.The formation of the loop wire cycle is ensured by the synchronous movement of the bonding head along the Z axis and the working table along the XY axes based on the servo drive.A feature of the bonder is that it can bond all the wire loops of the electronic device according to the pre-recorded program without needing to align the bonding points.

接地共面波导与芯片级联结构设计与优化

针对传输线与芯片级联时产生阻抗突变,导致传输效率下降的问题,基于接地共面波导与芯片级联结构,提出了一种适用于X~Ka波段的匹配带线解决方法。通过S参数提取芯片的输入阻抗,并对射频电路中的阻抗不连续点进行分析,设计阻抗匹配电路并建立三维仿真模型。通过有限元仿真分析,讨论了匹配电路和键合引线中心间距对射频传输性能的影响,对比分析了不同结构及不同匹配电路的传输性能差异。仿真结果显示:在X~Ka波段范围内,匹配电路可令接地共面波导与芯片级联结构的S11<-21 dB,S21>-0.19 dB。优化后的接地共面波导与芯片级联结构可在降低传输损耗的同时显著提高射频信号的隔离度,减少信道串扰,为厘米波频段下射频电路的设计提供理论参考。

自动光学检测技术在引线键合中的应用

微电子产品内部结构复杂,引线数量多且分布无规律,给人工检验带来了巨大挑战。自动光学检测具有效率高且漏检率低的特点,可实现产品引线键合正确性的自动化检验。对引线键合的自动光学检测原理进行深入分析,结合实际生产,着重介绍键合点编号技术。实现了引线键合的自动化检验,确保引线键合的正确性,并且极大降低了误报率。

电磁寄生参数对SAW滤波器性能的影响

设计了B41频段的声表面波(SAW)滤波器,利用三维电磁场仿真工具HFSS建立表面贴装器件(SMD)封装和芯片级(CSP)封装模型,对比两种封装的声-电磁联合仿真结果得出,在滤波器电路拓扑结构中,当2条不同并联支路连接在一起时,由于SMD封装键合引线的电磁寄生参数影响,滤波器在高频处的带外抑制会出现“上翘”。建立不同键合线数量、直径及长度的SMD封装模型,并仿真计算S参数。对比仿真结果可知,随着键合线直径的增大和长度的减小,其等效电感逐渐变小,即键合线的电磁寄生参数逐渐减小,对SAW滤波器性能的影响逐渐减弱,高频处的带外抑制性能得到优化。结果表明,CSP封装植球倒扣的电磁寄生参数更小,声-电磁联合仿真的结果更优,与实测结果吻合较好。

一种基于开通栅极电压的新型IGBT键合线老化监测方法

绝缘栅双极型晶体管(insulated gate bipolar transistors,IGBT)的可靠运行是牵引变流器安全和性能的重要保障。键合线老化作为IGBT的一种常见失效模式,对其进行监测具有重要意义。文中提出一种基于开通栅极电压ugem的键合线老化监测方法,该方法可有效避免温度和负载电流带来的影响。首先,基于IGBT等效电路模型,系统分析ugem受键合线断裂影响的原因;其次,利用双脉冲测试进行验证,同时对温度和负载电流带来的影响进行分析;在此基础上,考虑到使用ugem局部特征将受到温度和电流的干扰,提出将开通栅极电压整体波形用于键合线老化的监测,并进一步利用有监督的线性判别分析进行数据降维以及采用支持向量机实现键合线断裂根数的检测。最后,通过实验对所提监测方法的有效性进行验证。

金合金中Ce和Lu晶界偏聚的第一性原理研究

元素在晶界的偏聚通常会引起材料性能的变化。基于第一性原理研究了Ce和Lu元素在纯金晶界的偏聚行为,计算得出Ce和Lu的最小晶界偏聚能分别为-0.89和-0.28 eV,这表明Ce在晶界的偏聚倾向较大,而Lu的偏聚倾向较小;同时,在此基础上进一步研究了Ce和Lu在金合金中的原子结构和电子结构,揭示了晶界偏聚的物理成因。

计及磁链和电流的PMSM DTC系统中功率器件键合线老化监测方法

在闭环控制系统中,基于电参数的功率器件老化监测方法是电力电子可靠性领域的难点之一。以永磁同步电机直接转矩控制系统为例,研究基于磁链相图和电流的功率逆变器中功率器件老化状态的在线监测方法。首先,分析功率器件老化的特征,得到键合线老化引起通态电阻增加的结论;其次,研究得到功率器件键合线老化与磁链相图、直轴电流和三相电流峰值变化的关系,进而提出功率器件键合线老化的监测方法;最后,通过多组仿真实验验证了基于磁链相图和电流的在线监测方法均可实现功率逆变器中功率器件键合线老化状态的在线监测。其中,基于磁链相图的在线监测方法需要系统磁链出现一些波动时才易观测,此时功率器件处于失效状态,该方法并不可取;而基于三相电流的监测方法能够更为精确地监测功率器件老化状况,效果更为优越。

红外探测器芯片高可靠性键合工艺研究

金丝键合工艺广泛应用于红外探测器的封装环节。实验选用25μm金丝,基于正交试验法,根据键合拉力值确定键合的最佳工艺参数。通过优化超声压力、超声功率、超声时间及接触力等工艺参数组合,改善了键合引线的电气连接性能和连接强度,从而提高芯片系统的信号传输质量。提出的引线键合工艺参数组合适用于红外探测芯片的键合。

TO-3封装器件键合丝热机械可靠性与寿命预测

为解决双芯片功率放大器的过电应力烧毁问题,对器件电路进行改进并探究其可靠性。首先,重新设计和制备基片上金属带线,并进行温度循环与拉力检测试验;然后,基于有限元方法在温度循环载荷作用下对键合丝应力应变分布情况进行了分析,并通过Coffin-Manson模型对器件的疲劳寿命进行预测分析。结果表明,高温下应力降低了3.23 MPa,低温下应力下降了97.7 MPa。改进后的器件寿命提高了11.6%,且经历过温度循环后仍满足最小键合拉力极限值要求。该研究结果可为复杂键合丝结构及寿命预测提供参考。

基于硅凝胶灌封温循载荷下的键合丝疲劳失效机理仿真分析

针对某型混合集成电路在温度循环试验后出现的硅凝胶灌封区域键合丝疲劳失效,对键合丝的键合强度和疲劳断裂失效进行了试验分析,建立了单根键合丝和硅凝胶局部灌封区域的有限元简化模型,拟合了硅凝胶材料的本构模型参数,基于ANSYS Workbench软件对不同胶体材料参数条件和温循载荷作用下的键合丝应力分布情况进行了热力耦合仿真分析,并基于仿真结果对混合集成电路的硅凝胶灌封工艺进行了优化和加严温度循环试验。仿真和实验结果表明,键合丝第一键合点颈部和第二键合点根部的应力值较大,存在明显的塑性应变,与疲劳断裂失效分析一致;通过减小硅凝胶的热膨胀系数和灌封体积的方式进行工艺优化后,键合丝的应力值显著减小,样品经过温度循环试验后实测良率从167%提升至100%。研究结果对于提高硅凝胶灌封区域中的金丝键合疲劳强度有一定的指导意义。

GaN基异质结霍尔传感器封装测试与输出特性

霍尔传感器作为磁传感领域最常用的传感器类型,在工业生产、汽车电子、航空航天以及生物医学等方面均有广泛应用.本文利用宽禁带氮化镓(GaN)半导体耐高温、高迁移率等优点,采用标准半导体芯片制造工艺研制出AlGaN/GaN异质结结构霍尔传感器.高温应用环境下的传感器要求封装材料耐高温、产生应力低以及对传感器关键指标影响小.本文通过软件仿真树脂橡胶类3种不同封装材料封装后对传感器及键合线的性能影响规律,并通过实验验证不同材料封装前后传感器灵敏度、失调电压、温漂系数等物理参量的变化,遴选出综合性能最优的、可在550 K高温环境下使用的封装材料.最终得到封装后的霍尔传感器失调电压在1.0 mA激励电流时小于115μV,信号线性度在0~3.0 mA激励电流和0~1.0 T磁场测量范围内优于0.3%,而温漂系数在300~550 K温度范围内仅有-120.9 ppm/K,优于目前文献报道结果,因此有望应用于极端环境磁场检测中.