A novel electroplating indium bumping process is described,as a result of which indium bump arrays with a pitch of 100μm and a diameter of 40μm were successfully prepared.UBM（under bump metallization） for indium b...A novel electroplating indium bumping process is described,as a result of which indium bump arrays with a pitch of 100μm and a diameter of 40μm were successfully prepared.UBM（under bump metallization） for indium bumping was investigated with an XRD technique.The experimental results indicate that Ti/Pt（300（？）/200（？）） has an excellent barrier effect both at room temperature and at 200℃.The bonding reliability of the indium bumps was evaluated by a shear test.Results show that the shear strength of the indium bump significantly increases after the first reflow and then changes slowly with increasing reflow times.Such a phenomenon may be caused by the change in textures of the indium after reflow.The corresponding flip-chip process is also discussed in this paper.展开更多
基金Project supported by the State Key Development Program for Basic Research of China(No.2006CB0N0802)the Shanghai Basic Research Project(No.08JC1422000)
文摘A novel electroplating indium bumping process is described,as a result of which indium bump arrays with a pitch of 100μm and a diameter of 40μm were successfully prepared.UBM（under bump metallization） for indium bumping was investigated with an XRD technique.The experimental results indicate that Ti/Pt（300（？）/200（？）） has an excellent barrier effect both at room temperature and at 200℃.The bonding reliability of the indium bumps was evaluated by a shear test.Results show that the shear strength of the indium bump significantly increases after the first reflow and then changes slowly with increasing reflow times.Such a phenomenon may be caused by the change in textures of the indium after reflow.The corresponding flip-chip process is also discussed in this paper.
