In order to improve the compatibility of laser-induced breakdown spectroscopy( LIBS) instrument for different types of parts and optimize the analysis and testing processes,a modularized automatic measurement and cont...In order to improve the compatibility of laser-induced breakdown spectroscopy( LIBS) instrument for different types of parts and optimize the analysis and testing processes,a modularized automatic measurement and control system was developed. Based on the characteristics of each LIBS component, the following development steps have been performed:( 1) a summary of characteristic parameters of the component are established;( 2) the integration mechanism of multiple electrical interfaces is designed;( 3) the component control instruction library is developed. The experimental results indicate that the measurement and control system is compatible with most LIBS parts in the market.Spectrometer and laser can be compatible with at least three different types of parts. In addition,a multilayer iterative testing process is designed to improve the efficiency of optimization process of LIBS parameters. The experimental results have shown that the automatic optimization of the delay time compared to the manual testing provides significant gain in testing efficiency. The range of delay time in the experiments is 1. 28 to 10. 28 μs and the step value is 1,0. 5,0. 2 and 0. 1 μs. The gain in testing efficiency has been found to be increased by 73. 76%,75. 93%,78. 81% and 80. 42%,respectively.展开更多
为了解决软击穿导致的压控磁各向异性磁隧道结(voltage-controlled magnetic anisotropy magnetic tunnel junction,VCMA-MTJ)及其读电路性能下降的问题,在对VCMA-MTJ软击穿机理深入分析的基础上,修正了VCMA-MTJ的电学模型,设计了一种...为了解决软击穿导致的压控磁各向异性磁隧道结(voltage-controlled magnetic anisotropy magnetic tunnel junction,VCMA-MTJ)及其读电路性能下降的问题,在对VCMA-MTJ软击穿机理深入分析的基础上,修正了VCMA-MTJ的电学模型,设计了一种具有固定参考电阻的VCMA-MTJ读电路和一种具有参考电阻调控单元的VCMA-MTJ读电路,研究了软击穿对VCMA-MTJ电阻R_(t)、隧穿磁阻比率M、软击穿时间T_(s)以及VCMA-MTJ读电路读错误率的影响。结果表明:软击穿的出现会导致R_(t)和M均随应力时间t的增加而降低,T_(s)随氧化层厚度t_(ox)的增大而缓慢增加,却随脉冲电压V_(b)的增大而迅速减少,与反平行态相比,平行态的T_(s)更短且M降低50%所需时间更少;具有固定参考电阻的VCMA-MTJ读电路可有效避免读“0”错误率的产生,但读“1”错误率却随t的增加而上升,而具有参考电阻调控单元的VCMA-MTJ读电路可在保持读“0”正确率的同时,对读“1”错误率改善达54%,在一定程度上削弱了软击穿对VCMA-MTJ读电路的影响。展开更多
基金National M ajor Scientific Instruments and Equipment Development Special Funds,China(No.2011YQ030113)
文摘In order to improve the compatibility of laser-induced breakdown spectroscopy( LIBS) instrument for different types of parts and optimize the analysis and testing processes,a modularized automatic measurement and control system was developed. Based on the characteristics of each LIBS component, the following development steps have been performed:( 1) a summary of characteristic parameters of the component are established;( 2) the integration mechanism of multiple electrical interfaces is designed;( 3) the component control instruction library is developed. The experimental results indicate that the measurement and control system is compatible with most LIBS parts in the market.Spectrometer and laser can be compatible with at least three different types of parts. In addition,a multilayer iterative testing process is designed to improve the efficiency of optimization process of LIBS parameters. The experimental results have shown that the automatic optimization of the delay time compared to the manual testing provides significant gain in testing efficiency. The range of delay time in the experiments is 1. 28 to 10. 28 μs and the step value is 1,0. 5,0. 2 and 0. 1 μs. The gain in testing efficiency has been found to be increased by 73. 76%,75. 93%,78. 81% and 80. 42%,respectively.
文摘为了解决软击穿导致的压控磁各向异性磁隧道结(voltage-controlled magnetic anisotropy magnetic tunnel junction,VCMA-MTJ)及其读电路性能下降的问题,在对VCMA-MTJ软击穿机理深入分析的基础上,修正了VCMA-MTJ的电学模型,设计了一种具有固定参考电阻的VCMA-MTJ读电路和一种具有参考电阻调控单元的VCMA-MTJ读电路,研究了软击穿对VCMA-MTJ电阻R_(t)、隧穿磁阻比率M、软击穿时间T_(s)以及VCMA-MTJ读电路读错误率的影响。结果表明:软击穿的出现会导致R_(t)和M均随应力时间t的增加而降低,T_(s)随氧化层厚度t_(ox)的增大而缓慢增加,却随脉冲电压V_(b)的增大而迅速减少,与反平行态相比,平行态的T_(s)更短且M降低50%所需时间更少;具有固定参考电阻的VCMA-MTJ读电路可有效避免读“0”错误率的产生,但读“1”错误率却随t的增加而上升,而具有参考电阻调控单元的VCMA-MTJ读电路可在保持读“0”正确率的同时,对读“1”错误率改善达54%,在一定程度上削弱了软击穿对VCMA-MTJ读电路的影响。
