Broadband Power Amplifiers for Unified Base Stations

A broadband power amplifier is required to cover the full range of cellular frequency band—from 700 MHz to 2600 MHz—in a base station that supports multiple frequency bands simultaneously. Conventional laterally diffused metal oxide semiconductor （LDMOS） transistors support narrow band applications up to 3 GHz. However, they cannot operate beyond 1 GHz in broadband applications. GaN transistors have much higher power density and operational frequency compared with LDMOS. Therefore, they are ideal for broadband amplifiers that support multiple bands. Theories for designing broadband amplifiers are introduced in this article, and a 500-2500 MHz 60 W GaN amplifier is discussed.

Tm^(3+)-doped tellurite glass with Yb^(3+) energy sensitized for broadband amplifier at 1400–1700 nm bands

A kind of novel experiment was disclosed as it possessed two bands of fluorescence emission at 1.4 and 1.6 μm, which were perfectly complimentary to the current C band of optic communication. The fluorescence was based on energy transfer and up-conversion processes between Tm^3＋ and Yb^3＋ under direct pumping of 975 nm LD. The spectra and lifetimes of Tm^3＋ fluorescence in the tellurite glass were described. The corresponding fluorescence characteristics and energy migration process were analyzed by the method of lifetime and intensity comparison. The mechanism of the up-conversion based IR fluorescence was presented upon analyzing the multi-photon pumping process. The potential advantages of Tm^3＋/Yb^3＋ co-doped tellurite glass as amplifier material were concluded.

A Temperature-Insensitive Amplified Spontaneous Emission Broadband Source Based on Er-Doped Fiber

To obtain a stable amplified spontaneous emission（ASE） source for complex environment applications, we design an ASE source and study the output power and spectral characteristics under different ambient temperatures.We optimize the structure of the ASE source to flatten the ASE spectrum, and study the output characteristics in terms of output power and optical spectrum under different pump powers. Then the performance of the ASE source is investigated in the temperature range from-18.9°C to 50°C. A stable-power and flat-spectrum ASE source can be obtained by structural optimization and pump control.

Robust Digital Control of a Broadband PWM Power Amplifier

Lately, it is required that the bandwidth of PWM （pulse width modulation） power amplifier is extended. For example, it is in application of the testing power supply of a low frequency immunity examination, or a class-D amplifier. In this paper, the authors show that the bandwidth of PWM power amplifier can be controller. This controller is implemented on a DSP （digital can be made wider with this controller. extended by using an approximate 2DOF （2-degree-of-freedom） digital signal processor）. It is demonstrated from experiments that the bandwidth

Rhodamine 6G-doped polymer optical fiber amplifiers

Rhodamine 6G-doped step-index polymer optical fiber is fabricated. The characteristics of the amplification of rhodamine 6G-doped step-index polymer optical fiber amplifier have been studied. The high-gain optical amplification with a tunable wavelength range from 585 to 613 nm is obtained in a step-index polymer optical fiber doped with rhodamine 6G at 10-ppm level, which can be used for broadband amplifiers and tunable lasers.

Compact and high-power broadband terahertz source based on femtosecond photonic crystal fiber amplifier

We present a review of the development of a compact and high-power broadband terahertz （THz） source optically excited by a femtosecond photonic crystal fiber （PCF） amplifier.The large mode area of the PCF and the stretcher-free configuration make the pump source compact and very efficient.Broadband THz pulses of 150 μW extending from 0.1 to 3.5 THz are generated from a 3-mm-thick GaP crystal through optical rectification of 12-W pump pulses with duration of 66 fs and a repetition rate of 52 MHz.A strong saturation effect is observed,which is attributed to pump pulse absorption;a Z-scan measurement shows that three-photon absorption dominates the nonlinear absorption when the crystal is pumped by femtosecond pulses at 1 040 nm.A further scale-up of the THz source power is expected to find important applications in THz nonlinear optics and nonlinear THz spectroscopy.

A novel broadband power amplifier in SiGe HBT technology

A novel broadband power amplifier fabricated in 0.13 m SiGe HBT technology is realized.The pseudo-differential structure is proposed to avoid the influence of the bonding wire due to the AC virtual ground created at the common emitter node.A compensated matching technique is adopted in interstage matching to expand bandwidth.A multi-stage broadband matching technique is used in an input/output matching network to offer broadband impedance matching,which ensures maximum power transfer.An adaptive bias circuit could improve linearity and efficiency in wide output power level.With 2.5 V power supply,the measured results achieve 96% 3-dB bandwidth（517-1470 MHz）,27.2 dB power gain,26.9 dBm maximum output power,19.7 dBm output 1 dB compression point,and 26.7% power added efficiency.

Design of High-Efficiency broadband power amplifier using low-pass bias network

A novel design of high-efficiency broadband power amplifier （BPA） with the low-pass bias networkto enhance the efficiency and output power is presented in this paper. Compared with other bias networks, the proposed low-pass bias network shows a smaller baseband impedance, which can reduce the electrical memory effect. While it provides a larger radio frequency （RF） impedance, which can prevent the leakage of the output power from bias network. A BPA with the proposed bias network is designed using commercial GaN device Cree40025F. The designed BPA shows a fractional bandwidth of 40%, from 1.8 GHz to 2.7 GHz. The measured results exhibit 73.9 % drain efficiency （DE） value with output power of 43.5 dBm at 2.7 GHz, which appears an enhancement of 9.5% and 2.5 dBm comparing with that adopts LC bias network.

Designing broadband fiber optic parametric amplifier based on near-zero single ZDW PCF with ultra-flat nature

We propose a broadband fiber optic parametric amplifier（FOPA） based on a near-zero ultra-flat dispersion profile with a single zero-dispersion wavelength（ZDW） by using a selective liquid infiltration technique.The amplifier gain and bandwidth is investigated for a variety of fiber lengths, pump power, and operating wavelengths. It is observed that sufficient peak gains and broader bandwidths can be achieved with a small negative anomalous dispersion（β2≤ 0） and a positive value of the 4th-order dispersion parameter（t β4）around the pump. We can optimize an FOPA with a bandwidth of more than 220 nm around the communications wavelength.

Yb^(3+)/Er^(3+)-Codoped Tungsten-Tellurite Glasses for Broadband Optical Amplifier

Emission spectra and fluorescence lifetime of Er3+ in Yb3+/Er3+-codoped tungsten-tellurite glasses were measured. Effects of Yb3+concentration on 1.5μm emission intensity and bandwidth of Er3+ were investigated and a FWHM of 81 nm was demonstrated.

Enhanced 1.32 μm fluorescence and broadband amplifying for O-band optical amplifier in Nd^(3＋)-doped tellurite glass

WO_3 oxides with relatively high phonon energy and different concentrations were introduced into the Nd^(3+)-doped tellurite-based glasses of Te O_2-Zn O-Na_2 O to improve the 1.32 μm band fluorescence emission. The absorption spectra,Raman spectra,1.32 μm band fluorescence spectra and differential scanning calorimeter(DSC) curves were measured,together with the Judd-Ofelt intensity parameters,stimulated emission and gain parameters were calculated to evaluate the effects of WO_3 amount on the glass structure and spectroscopic properties of 1.32 μm band fluorescence. It is shown that the introduction of an appropriate amount of WO_3 oxide can effectively improve the 1.32 μm band fluorescence intensity through the enhanced multi-phonon relaxation(MPR) processes between the excited levels of Nd^(3+). The results indicate that the prepared Nd^(3+)-doped tellurite glass with an appropriate amount of WO_3 oxide is a potential gain medium applied for the O-band broad and high-gain fiber amplifier.

175-W continuous-wave master oscillator power amplifier structure ytterbium-doped all-fiber laser

We report on hundred watts range ytterbium-doped all-fiber laser assembly based on the master oscillator power amplifier structure. It consisted of an oscillator and an amplifier with all-fiber components. And fiber fusion splice made the laser be an integrated fiber system. It generated up to 175.5 W of continuous- wave （CW） output power at 1085 nm with more than 75% extraction efficiency in the amplifier when the total coupled pump power into the double clad fiber was 270 W.

Photonic ultra-wideband monocycle pulses generation using semiconductor optical amplifier and electro-absorber in parallel

A scheme for photonic generation of ultra-wideband （UWB） pulses using a semiconductor optical amplifier （SOA） and an electro-absorber （EA） in parallel is proposed and numerically demonstrated. By adjusting the time delay between two pump signals incident into the SOA and the EA, we can obtain monocycle pulses with reversed polarities and different bandwidths. The proposed method is flexible in pulse shaping and easy in practical optimization.

Ultra-broad near-infrared emission of Bi-doped SiO_2 Al_2O_3 GeO_2 optical fibers

Bi-doped SiO2-Al2O3-GeO2 fiber preforms are prepared by modified chemical vapor deposition （MCVD） and solution doping process. The characteristic spectra of the preforms and fibers are experimentally investigated, and a distinct difference in emission between the two is observed. Under 808-nm excitation, an ultra-broad near-infrared （NIR） emission with full-width at half-maximum （FWHM） of 495 nm is observed in the Bi-doped fiber. This observation, to our knowledge, is the first in this field. The NIR emission consists of two bands, which may be ascribed to the Bi0 and Bi＋ species, respectively. This Bi-doDed fiber is promising for broadband or）tical amolification and widely tunable laser.

Generation of high-order harmonic continuum with two-hump-structure infrared laser pulse

We experimentally investigate the high-order harmonic generation in argon gas cell driven by a multi-cycle broadband infrared laser pulse from a tunable optical-parametric-amplifier （OPA） source. The generation of high-order harmonic continuum with the cut-off photon energy up to 110 eV is observed by tuning the chirp of the 800-nm laser pulse which pumps OPA source. The generation of harmonic continuum is understood in terms of the two-hump structure of the OPA output spectrum and the optimal relative phase of the two humps. The demonstrated scheme is of importance for the generation of extreme ultraviolet （XUV） continuum at higher photon energy region.

Enhancement of fluorescence emission and signal gain at 1.53 μm in Er^(3+)/Ce^(3+) co-doped tellurite glass fiber

Er3+/Ce3+ co-doped tellurite glasses with composition of TeO2-GeO2-Li2O-Nb2O5 were prepared using conventional melt-quenching technique for potential applications in Er3+-doped fiber amplifier(EDFA). The absorption spectra, up-conversion spectra and 1.53 μm band fluorescence spectra of glass samples were measured. It is shown that the 1.53 μm band fluorescence emission intensity of Er3+-doped tellurite glass fiber is improved obviously with the introduction of an appropriate amount of Ce3+, which is attributed to the energy transfer(ET) from Er3+ to Ce3+. Meanwhile, the 1.53 μm band optical signal amplification is simulated based on the rate and power propagation equations, and an increment in signal gain of about 2.4 d B at 1 532 nm in the Er3+/Ce3+ co-doped tellurite glass fiber is found. The maximum signal gain reaches 29.3 d B on a 50 cm-long fiber pumped at 980 nm with power of 100 m W. The results indicate that the prepared Er3+/Ce3+ co-doped tellurite glass is a good gain medium applied for 1.53 μm broadband and high-gain EDFA.