A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteri...A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteristic test shows that the output i dB compression point is about -8.5 dBm at 334 GHz and the maximum efficiency is obtained at the point, which is slightly below the 1 dB compression point. Compared with the conventional hybrid integrated circuit, a major advantage of the monolithic integrated circuit is the significant improvement of reliability and consistency. In this work, a terahertz monolithic frequency multiplier at this band is designed and fabricated.展开更多
This paper deals with the design of bidirectional coupler for broadband power line communication and the impedance matching technique with the power line. This coupler can be used for both transmitting and receiving t...This paper deals with the design of bidirectional coupler for broadband power line communication and the impedance matching technique with the power line. This coupler can be used for both transmitting and receiving the data, acting as transceiver. The impedance mismatching problem is also solved here using line trap circuit. The coupler circuit is capable of transmitting or receiving modulated signals with carrier frequency of 15 MHz which can be used for domestic as well as distribution power networks. Laboratory prototype tested using power line network consists of electrical household appliances and results show that the circuit is able to facilitate bidirectional band pass transmission.展开更多
基于0.15μm GaAs赝配高电子迁移率晶体管(p HEMT)工艺,设计了一款18~40 GHz的无源双平衡混频器。该混频器采用肖特基二极管构成的混频环和3耦合线Marchand巴伦的结构,提高工作带宽的同时也减小了芯片尺寸。当本振(LO)功率为14 d Bm、中...基于0.15μm GaAs赝配高电子迁移率晶体管(p HEMT)工艺,设计了一款18~40 GHz的无源双平衡混频器。该混频器采用肖特基二极管构成的混频环和3耦合线Marchand巴伦的结构,提高工作带宽的同时也减小了芯片尺寸。当本振(LO)功率为14 d Bm、中频(IF)频率为100 MHz时,常温下流片测试的各项参数典型值为上下变频模式下LO/射频(RF)频段覆盖18~40 GHz,带内变频损耗为-7 d B,1 d B压缩点功率值为10 d Bm,LO到RF端口的隔离度为-25 d B,同时其余各端口之间具有优良的隔离度。中频频率覆盖DC~20 GHz,芯片尺寸为1.63 mm×0.97 mm。展开更多
基金Supported by the National High-Technology Research and Development Program of China under Grant No 2011AA010203the National Basic Research Program of China under Grant Nos 2011CB201704 and 2010CB327502the National Natural Science Foundation of China under Grant Nos 61434006 and 61106074
文摘A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteristic test shows that the output i dB compression point is about -8.5 dBm at 334 GHz and the maximum efficiency is obtained at the point, which is slightly below the 1 dB compression point. Compared with the conventional hybrid integrated circuit, a major advantage of the monolithic integrated circuit is the significant improvement of reliability and consistency. In this work, a terahertz monolithic frequency multiplier at this band is designed and fabricated.
文摘This paper deals with the design of bidirectional coupler for broadband power line communication and the impedance matching technique with the power line. This coupler can be used for both transmitting and receiving the data, acting as transceiver. The impedance mismatching problem is also solved here using line trap circuit. The coupler circuit is capable of transmitting or receiving modulated signals with carrier frequency of 15 MHz which can be used for domestic as well as distribution power networks. Laboratory prototype tested using power line network consists of electrical household appliances and results show that the circuit is able to facilitate bidirectional band pass transmission.
文摘基于0.15μm GaAs赝配高电子迁移率晶体管(p HEMT)工艺,设计了一款18~40 GHz的无源双平衡混频器。该混频器采用肖特基二极管构成的混频环和3耦合线Marchand巴伦的结构,提高工作带宽的同时也减小了芯片尺寸。当本振(LO)功率为14 d Bm、中频(IF)频率为100 MHz时,常温下流片测试的各项参数典型值为上下变频模式下LO/射频(RF)频段覆盖18~40 GHz,带内变频损耗为-7 d B,1 d B压缩点功率值为10 d Bm,LO到RF端口的隔离度为-25 d B,同时其余各端口之间具有优良的隔离度。中频频率覆盖DC~20 GHz,芯片尺寸为1.63 mm×0.97 mm。
