A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltag...A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. Though our data are influenced by large additional RF probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1GHz and a cut-off frequency fτ of 1.8GHz at a DC bias point of IC=10mA and VCE = 2.5V.展开更多
The waveguide design is one of the most important parts in a terahertz quantum cascade laser（QCL）. Si/SiGe QCL waveguides, based on the Drude model and finite-difference time-domain （FDTD） method, are designed by ...The waveguide design is one of the most important parts in a terahertz quantum cascade laser（QCL）. Si/SiGe QCL waveguides, based on the Drude model and finite-difference time-domain （FDTD） method, are designed by the traditional refractive index waveguide structure, the single-sided metal structure, the double-metal clad structure, and a novel metal/metal silicide structure. The metal/metal silicide structure, showing high modal confinement,is convenient in process engineering and is expected to be a viable waveguide solution for Si/SiGe QCLs in the THz range.展开更多
文摘A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. Though our data are influenced by large additional RF probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1GHz and a cut-off frequency fτ of 1.8GHz at a DC bias point of IC=10mA and VCE = 2.5V.
文摘The waveguide design is one of the most important parts in a terahertz quantum cascade laser（QCL）. Si/SiGe QCL waveguides, based on the Drude model and finite-difference time-domain （FDTD） method, are designed by the traditional refractive index waveguide structure, the single-sided metal structure, the double-metal clad structure, and a novel metal/metal silicide structure. The metal/metal silicide structure, showing high modal confinement,is convenient in process engineering and is expected to be a viable waveguide solution for Si/SiGe QCLs in the THz range.
