Water oxidation is the bottleneck of artificial photosynthesis.Since the first ruthenium-based molecular water oxidation catalyst,the blue dimer,was reported by Meyer’ s group in 1982,catalysts based on transition me...Water oxidation is the bottleneck of artificial photosynthesis.Since the first ruthenium-based molecular water oxidation catalyst,the blue dimer,was reported by Meyer’ s group in 1982,catalysts based on transition metals have been widely employed to explore the mechanism of water oxidation.Because the oxidation of water requires harsh oxidative conditions,the stability of transition complexes under the relevant catalytic conditions has always been a challenge.In this work,we report the redox properties of a CuⅢ complex(TAML-CuⅢ] with a redox-active macrocyclic ligand(TAML) and its reactivity toward catalytic water oxidation.TAML-CuⅢ displayed a completely different electrochemical behavior from that of the TAML-CoⅢ complex previously reported by our group.TAML-CuⅢ can only be oxidized by one-electron oxidation of the ligand to form TAML·+-CuⅢand cannot achieve water activation through the ligand-centered proton-coupled electron transfer that takes place in the case of TAML-CoⅢ.The generated TAML·+-CuⅢ intermediate can undergo further oxidation and ligand hydrolysis with the assistance of borate anions,triggering the formation of a heterogeneous B/CuOx nanocatalyst Therefore,the choice of the buffer solution has a significant influence on the electrochemical behavior and stability of molecular water oxidation catalysts.展开更多
A top-contact organic field-effect transistor （OFET） is fabricated by adopting a pentacene/1,11-bis（di-4- tolylaminophenyl） cyclohexane （TAPC） heterojunction structure and inserting an MoO3 buffer layer between ...A top-contact organic field-effect transistor （OFET） is fabricated by adopting a pentacene/1,11-bis（di-4- tolylaminophenyl） cyclohexane （TAPC） heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage~ are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.展开更多
An improved 4H-SiC metal-semiconductor field-effect transistors （MESFETs） with step p-buffer layer is proposed, and the static and dynamic electrical performances are analysed in this paper. A step p-buffer layer ha...An improved 4H-SiC metal-semiconductor field-effect transistors （MESFETs） with step p-buffer layer is proposed, and the static and dynamic electrical performances are analysed in this paper. A step p-buffer layer has been applied not only to increase the channel current, but also to improve the transconductance. This is due to the fact that the variation in p-buffer layer depth leads to the decrease in parasitic series resistance resulting from the change in the active channel thickness and modulation in the electric field distribution inside the channel. Detailed numerical simulations demonstrate that the saturation drain current and the maximum theoretical output power density of the proposed structure are about 30% and 37% larger than those of the conventional structure. The cut-off frequency and the maximum oscillation frequency of the proposed MESFETs are 14.5 and 62 GHz, respectively, which are higher than that of the conventional structure. Therefore, the 4H-SiC MESFETs with step p-buffer layer have superior direct-current and radio-frequency performances compared to the similar devices based on the conventional structure.展开更多
An improved structure of silicon carbide metal-semiconductor field-effect transistors （MESFET） is proposed for high power microwave applications. Numerical models for the physical and electrical mechanisms of the de...An improved structure of silicon carbide metal-semiconductor field-effect transistors （MESFET） is proposed for high power microwave applications. Numerical models for the physical and electrical mechanisms of the device are presented, and the static and dynamic electrical performances are analysed. By comparison with the conventional structure, the proposed structure exhibits a superior frequency response while possessing better DC characteristics. A p-type spacer layer, inserted between the oxide and the channel, is shown to suppress the surface trap effect and improve the distribution of the electric field at the gate edge. Meanwhile, a lightly doped n-type buffer layer under the gate reduces depletion in the channel, resulting in an increase in the output current and a reduction in the gate-capacitance. The structural parameter dependences of the device performance are discussed, and an optimized design is obtained. The results show that the maximum saturation current density of 325 mA/mm is yielded, compared with 182 mA/mm for conventional MESFETs under the condition that the breakdown voltage of the proposed MESFET is larger than that of the conventional MESFET, leading to an increase of 79% in the output power density. In addition, improvements of 27% cut-off frequency and 28% maximum oscillation frequency are achieved compared with a conventional MESFET, respectively.展开更多
Rock sheds are widely used to prevent rockfall disasters along roads in mountainous areas.To improve the capacity of rock sheds for resisting rockfall impact,a sand and expandable polyethylene(EPE)composite cushion wa...Rock sheds are widely used to prevent rockfall disasters along roads in mountainous areas.To improve the capacity of rock sheds for resisting rockfall impact,a sand and expandable polyethylene(EPE)composite cushion was proposed.A series of model experiments of rockfall impact on rock sheds were conducted,and the buried depth of the EPE foam board in the sand layer was considered.The impact load and dynamic response of the rock shed were investigated.The results show that the maximum impact load and dynamic response of the rock shed roof are all significantly less than those of the sand cushion.Moreover,as the distance between the EPE foam board and rock shed roof decreases,the maximum rockfall impact force and impact pressure gradually decrease,and the maximum displacement,acceleration and strain of the rock shed first decrease and then change little.In addition,the vibration acceleration and vertical displacement of the rock shed roof decrease from the centre to the edge and decrease faster along the longitudinal direction than that along the transverse direction.In conclusion,the buffering effect of the sand-EPE composite cushion is better than that of the pure sand cushion,and the EPE foam board at a depth of 1/3 the thickness of the sand layer is appropriate.展开更多
Although the importance of forest margins in ecology is recognized, no study has been carried out in the Slătioara Secular Forest Reserve with reference to the variability of abiotic parameters along forest margins. W...Although the importance of forest margins in ecology is recognized, no study has been carried out in the Slătioara Secular Forest Reserve with reference to the variability of abiotic parameters along forest margins. With this study, we investigate to what extent microclimatic variables (air temperature—T_air, air humidity—H_air, soil temperature—T_soil, soil humidity—H_soil wind intensity (WIND) and photosynthetically active radiation intensity (PAR)) are correlated with the distance from the edge to the forest interior and the habitat type (forest interior, inner and outer edge and meadow) in the Slătioara Secular Forest Reserve. In order to measure these microenvironment variables we used the strip transect method, positioned perpendicular to the forest edge. Differences in the microenvironment variables considered in the analysis between the four habitat types were assessed using one-way ANOVA followed by Tukey-test post-hoc. To assess differences along transects, each of the six measurements went through a one-way ANOVA against distance to edge, followed by a Levene’s test for variances and finally a Tukey-test post-hoc. The results indicate that the values of microclimatic variables were significantly different in relation to the gradient of distance from the edge and to the habitat type (interior-exterior forest) and that edge habitats are significantly more susceptible to lower humidity, high winds, lower light and higher air temperatures than forest interior habitats. The ecological study of the edge areas in this reserve provides the basis for future research on forest dynamics and can guide conservation efforts to maintain the diversity and endemism of species in the Slătioara Secular Forest.展开更多
Based on the observation that both subthreshold and gate leakage depend on transistors width, this paper introduces a feasible method to fast estimate leakage current in buffers. In simulating of leakage current with ...Based on the observation that both subthreshold and gate leakage depend on transistors width, this paper introduces a feasible method to fast estimate leakage current in buffers. In simulating of leakage current with swept transistor width, we found that gate leakage is not always a linear function of the device geometry. Subsequently, this paper presented the theoretical analysis and experimental evidence of this exceptional gate leakage behavior and developed a design methodology to devise a low-leakage and high-performance buffer with no penalty in area using this deviation.展开更多
We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT p...We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing layer.We measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement system.According to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.展开更多
文摘Water oxidation is the bottleneck of artificial photosynthesis.Since the first ruthenium-based molecular water oxidation catalyst,the blue dimer,was reported by Meyer’ s group in 1982,catalysts based on transition metals have been widely employed to explore the mechanism of water oxidation.Because the oxidation of water requires harsh oxidative conditions,the stability of transition complexes under the relevant catalytic conditions has always been a challenge.In this work,we report the redox properties of a CuⅢ complex(TAML-CuⅢ] with a redox-active macrocyclic ligand(TAML) and its reactivity toward catalytic water oxidation.TAML-CuⅢ displayed a completely different electrochemical behavior from that of the TAML-CoⅢ complex previously reported by our group.TAML-CuⅢ can only be oxidized by one-electron oxidation of the ligand to form TAML·+-CuⅢand cannot achieve water activation through the ligand-centered proton-coupled electron transfer that takes place in the case of TAML-CoⅢ.The generated TAML·+-CuⅢ intermediate can undergo further oxidation and ligand hydrolysis with the assistance of borate anions,triggering the formation of a heterogeneous B/CuOx nanocatalyst Therefore,the choice of the buffer solution has a significant influence on the electrochemical behavior and stability of molecular water oxidation catalysts.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61071026 and 61177032)the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No.61021061)+1 种基金the Fundamental Research Fund for the Central Universities of Misistry of Education of China (Grant No.ZYGX2010Z004)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090185110020)
文摘A top-contact organic field-effect transistor （OFET） is fabricated by adopting a pentacene/1,11-bis（di-4- tolylaminophenyl） cyclohexane （TAPC） heterojunction structure and inserting an MoO3 buffer layer between the TAPC organic semiconductor layer and the source/drain electrode. The performances of the heterojunction OFET, including output current, field-effect mobility, and threshed voltage~ are all significantly improved by introducing the MoO3 thin buffer layer. The performance improvement of the modified heterojunction OFET is attributed to a better contact formed at the Au/TAPC interface due to the MoO3 thin buffer layer, thereby leading to a remarkable reduction of the contact resistance at the metal/organic interface.
基金Project supported by the Fundamental Research Funds for the Central Universities(Grant No.ZYGX2009J029)
文摘An improved 4H-SiC metal-semiconductor field-effect transistors （MESFETs） with step p-buffer layer is proposed, and the static and dynamic electrical performances are analysed in this paper. A step p-buffer layer has been applied not only to increase the channel current, but also to improve the transconductance. This is due to the fact that the variation in p-buffer layer depth leads to the decrease in parasitic series resistance resulting from the change in the active channel thickness and modulation in the electric field distribution inside the channel. Detailed numerical simulations demonstrate that the saturation drain current and the maximum theoretical output power density of the proposed structure are about 30% and 37% larger than those of the conventional structure. The cut-off frequency and the maximum oscillation frequency of the proposed MESFETs are 14.5 and 62 GHz, respectively, which are higher than that of the conventional structure. Therefore, the 4H-SiC MESFETs with step p-buffer layer have superior direct-current and radio-frequency performances compared to the similar devices based on the conventional structure.
基金Project supported by the National Science Fund for Distinguished Young Scholars of China(Grant No.60725415)the National Natural Science Foundation of China(Grant No.60606006)the Pre-research Foundation of China(Grant No.51308030201)
文摘An improved structure of silicon carbide metal-semiconductor field-effect transistors （MESFET） is proposed for high power microwave applications. Numerical models for the physical and electrical mechanisms of the device are presented, and the static and dynamic electrical performances are analysed. By comparison with the conventional structure, the proposed structure exhibits a superior frequency response while possessing better DC characteristics. A p-type spacer layer, inserted between the oxide and the channel, is shown to suppress the surface trap effect and improve the distribution of the electric field at the gate edge. Meanwhile, a lightly doped n-type buffer layer under the gate reduces depletion in the channel, resulting in an increase in the output current and a reduction in the gate-capacitance. The structural parameter dependences of the device performance are discussed, and an optimized design is obtained. The results show that the maximum saturation current density of 325 mA/mm is yielded, compared with 182 mA/mm for conventional MESFETs under the condition that the breakdown voltage of the proposed MESFET is larger than that of the conventional MESFET, leading to an increase of 79% in the output power density. In addition, improvements of 27% cut-off frequency and 28% maximum oscillation frequency are achieved compared with a conventional MESFET, respectively.
基金supported by the Natural Science Foundation of Sichuan Province(No.2022NSFSC1127)the Fundamental Research Funds for the Central Universities(No.2682023CX075).
文摘Rock sheds are widely used to prevent rockfall disasters along roads in mountainous areas.To improve the capacity of rock sheds for resisting rockfall impact,a sand and expandable polyethylene(EPE)composite cushion was proposed.A series of model experiments of rockfall impact on rock sheds were conducted,and the buried depth of the EPE foam board in the sand layer was considered.The impact load and dynamic response of the rock shed were investigated.The results show that the maximum impact load and dynamic response of the rock shed roof are all significantly less than those of the sand cushion.Moreover,as the distance between the EPE foam board and rock shed roof decreases,the maximum rockfall impact force and impact pressure gradually decrease,and the maximum displacement,acceleration and strain of the rock shed first decrease and then change little.In addition,the vibration acceleration and vertical displacement of the rock shed roof decrease from the centre to the edge and decrease faster along the longitudinal direction than that along the transverse direction.In conclusion,the buffering effect of the sand-EPE composite cushion is better than that of the pure sand cushion,and the EPE foam board at a depth of 1/3 the thickness of the sand layer is appropriate.
文摘Although the importance of forest margins in ecology is recognized, no study has been carried out in the Slătioara Secular Forest Reserve with reference to the variability of abiotic parameters along forest margins. With this study, we investigate to what extent microclimatic variables (air temperature—T_air, air humidity—H_air, soil temperature—T_soil, soil humidity—H_soil wind intensity (WIND) and photosynthetically active radiation intensity (PAR)) are correlated with the distance from the edge to the forest interior and the habitat type (forest interior, inner and outer edge and meadow) in the Slătioara Secular Forest Reserve. In order to measure these microenvironment variables we used the strip transect method, positioned perpendicular to the forest edge. Differences in the microenvironment variables considered in the analysis between the four habitat types were assessed using one-way ANOVA followed by Tukey-test post-hoc. To assess differences along transects, each of the six measurements went through a one-way ANOVA against distance to edge, followed by a Levene’s test for variances and finally a Tukey-test post-hoc. The results indicate that the values of microclimatic variables were significantly different in relation to the gradient of distance from the edge and to the habitat type (interior-exterior forest) and that edge habitats are significantly more susceptible to lower humidity, high winds, lower light and higher air temperatures than forest interior habitats. The ecological study of the edge areas in this reserve provides the basis for future research on forest dynamics and can guide conservation efforts to maintain the diversity and endemism of species in the Slătioara Secular Forest.
基金Supported by the National Natural Science Foundation of China(No.61271149)
文摘Based on the observation that both subthreshold and gate leakage depend on transistors width, this paper introduces a feasible method to fast estimate leakage current in buffers. In simulating of leakage current with swept transistor width, we found that gate leakage is not always a linear function of the device geometry. Subsequently, this paper presented the theoretical analysis and experimental evidence of this exceptional gate leakage behavior and developed a design methodology to devise a low-leakage and high-performance buffer with no penalty in area using this deviation.
文摘We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing layer.We measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement system.According to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.
