随着网络业务流量的增长,通信业务对密集波分复用(DWDM)的性能要求越来越高。为了提高传输效率,传输频谱逐渐向C+L Band传输扩展,Super C Band传输应运而生,但目前与之对应的掺铒光纤放大器(EDFA)相关研究较少。针对这一问题,文章提出...随着网络业务流量的增长,通信业务对密集波分复用(DWDM)的性能要求越来越高。为了提高传输效率,传输频谱逐渐向C+L Band传输扩展,Super C Band传输应运而生,但目前与之对应的掺铒光纤放大器(EDFA)相关研究较少。针对这一问题,文章提出了一种针对Super C Band传输的EDFA结构,基于Giles模型,分析了EDFA在Super C Band的特性,利用多级泵浦机制,设计了一种可以在Super C Band范围内进行放大的EDFA。结果表明,在-9.3 dBm入光时,该EDFA可以实现26 dB的平坦增益,16.7 dBm的输出功率,此时噪声指数小于5 dB,Ripple小于0.1 dB。并且根据需要,在入光处于-15.0~-3.5 dBm范围内时,通过调节泵浦功率与可调衰减器,均能够实现7~26 dB的可调增益。该EDFA可应用于5G传输和数据中心之间光纤通信等场合。展开更多
This paper describes the design and preliminary test of the low-level radio frequency(LLRF)part of the C band high-gradient test facility for the Shanghai Soft X-ray Free-Electron Laser(SXFEL)-Linear Accelerator(LINAC...This paper describes the design and preliminary test of the low-level radio frequency(LLRF)part of the C band high-gradient test facility for the Shanghai Soft X-ray Free-Electron Laser(SXFEL)-Linear Accelerator(LINAC).Before installation,the accelerating structures should be tested and conditioned.During the conditioning process,breakdown detection is needed to protect the accelerating structures and klystron from damage.The PCI extensions for instrumentation-based LLRF system and auto-conditioning algorithm are designed and applied in the LLRF part of the C band high-gradient test facility.Three C band accelerating structures and 1 pulse compressor have completed conditioning and were installed in the SXFEL-LINAC.展开更多
The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor(pHEMT)under the irradiation of C band high-power microwave(HPM)is investigated in this paper.Based on the theoretical analysis,...The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor(pHEMT)under the irradiation of C band high-power microwave(HPM)is investigated in this paper.Based on the theoretical analysis,the thermoelectric coupling model is established,and the key damage parameters of the device under typical pulse conditions are predicted,including the damage location,damage power,etc.By the injection effect test and device microanatomy analysis through using scanning electron microscope(SEM)and energy dispersive spectrometer(EDS),it is concluded that the gate metal in the first stage of the device is the vulnerable to HPM damage,especially the side below the gate near the source.The damage power in the injection test is about 40 dBm and in good agreement with the simulation result.This work has a certain reference value for microwave damage assessment of pHEMT.展开更多
文摘随着网络业务流量的增长,通信业务对密集波分复用(DWDM)的性能要求越来越高。为了提高传输效率,传输频谱逐渐向C+L Band传输扩展,Super C Band传输应运而生,但目前与之对应的掺铒光纤放大器(EDFA)相关研究较少。针对这一问题,文章提出了一种针对Super C Band传输的EDFA结构,基于Giles模型,分析了EDFA在Super C Band的特性,利用多级泵浦机制,设计了一种可以在Super C Band范围内进行放大的EDFA。结果表明,在-9.3 dBm入光时,该EDFA可以实现26 dB的平坦增益,16.7 dBm的输出功率,此时噪声指数小于5 dB,Ripple小于0.1 dB。并且根据需要,在入光处于-15.0~-3.5 dBm范围内时,通过调节泵浦功率与可调衰减器,均能够实现7~26 dB的可调增益。该EDFA可应用于5G传输和数据中心之间光纤通信等场合。
基金This work was supported by the National Key R&D Program of China(No.2018YFF0109203).
文摘This paper describes the design and preliminary test of the low-level radio frequency(LLRF)part of the C band high-gradient test facility for the Shanghai Soft X-ray Free-Electron Laser(SXFEL)-Linear Accelerator(LINAC).Before installation,the accelerating structures should be tested and conditioned.During the conditioning process,breakdown detection is needed to protect the accelerating structures and klystron from damage.The PCI extensions for instrumentation-based LLRF system and auto-conditioning algorithm are designed and applied in the LLRF part of the C band high-gradient test facility.Three C band accelerating structures and 1 pulse compressor have completed conditioning and were installed in the SXFEL-LINAC.
基金Project supported by the Foundation Enhancement Planthe National Natural Science Foundation of China (Grant No. 61974116)
文摘The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor(pHEMT)under the irradiation of C band high-power microwave(HPM)is investigated in this paper.Based on the theoretical analysis,the thermoelectric coupling model is established,and the key damage parameters of the device under typical pulse conditions are predicted,including the damage location,damage power,etc.By the injection effect test and device microanatomy analysis through using scanning electron microscope(SEM)and energy dispersive spectrometer(EDS),it is concluded that the gate metal in the first stage of the device is the vulnerable to HPM damage,especially the side below the gate near the source.The damage power in the injection test is about 40 dBm and in good agreement with the simulation result.This work has a certain reference value for microwave damage assessment of pHEMT.
