An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influ...An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.展开更多
An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self- developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an Al- GaN/GaN HEMT...An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self- developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an Al- GaN/GaN HEMT, Wilkinson power hybrids, a DC-bias circuit and microstrip matching circuits. For the stability of the amplifier module, special RC networks at the input and output, a resistor between the DC power supply and a transistor gate at the input and 3λ/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%, and an output power of 42.93 dBm; the power gain compression is 2 dB. For a four-way combined solid-state amplifier, the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET, the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier.展开更多
Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkins...Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.展开更多
报道了一款采用两级拓扑结构的2～4GHz宽带高功率单片微波功率放大器芯片。放大器采用了微带结构,并使用电抗匹配进行设计,重点在于宽带功率效率平坦化设计。经匹配优化后放大器在2～4GHz整个频带内脉冲输出功率大于35W,小信号增益达到2...报道了一款采用两级拓扑结构的2～4GHz宽带高功率单片微波功率放大器芯片。放大器采用了微带结构,并使用电抗匹配进行设计,重点在于宽带功率效率平坦化设计。经匹配优化后放大器在2～4GHz整个频带内脉冲输出功率大于35W,小信号增益达到22dB,在2.4GHz频点处峰值输出功率达到40W,对应的功率附加效率为35%。功率放大器芯片采用0.25μm GaN HEMT76.2mm圆片工艺制造,芯片尺寸为2.7mm×2.3mm。展开更多
报道了一款采用三级放大结构的Ku波段高效率GaN功率放大器芯片。放大器设计中通过电路布局优化改善功放芯片内部相位一致性,提高末级晶胞的合成效率,最终实现整个放大器功率及效率的提升。经匹配优化后放大器在14.6~17.0GHz频带内脉冲...报道了一款采用三级放大结构的Ku波段高效率GaN功率放大器芯片。放大器设计中通过电路布局优化改善功放芯片内部相位一致性,提高末级晶胞的合成效率,最终实现整个放大器功率及效率的提升。经匹配优化后放大器在14.6~17.0GHz频带内脉冲输出功率大于20 W,功率附加效率大于36%,最高39%。功率放大器芯片采用0.25μm GaN HEMT 101.6mm(4英寸)圆片工艺制造,芯片尺寸为2.3mm×1.9mm。展开更多
报道了一款采用0.35μm GaN HEMT工艺的C波段高增益功率模块。模块采用三级放大电路拓扑,正负电源结构设计。末级匹配电路采用低损耗高Q值的陶瓷片实现,通过一级L-C阻抗变换和两级威尔金森功分器,既进行了阻抗匹配又实现了功率合成。前...报道了一款采用0.35μm GaN HEMT工艺的C波段高增益功率模块。模块采用三级放大电路拓扑,正负电源结构设计。末级匹配电路采用低损耗高Q值的陶瓷片实现,通过一级L-C阻抗变换和两级威尔金森功分器,既进行了阻抗匹配又实现了功率合成。前级和中间级匹配电路采用高集成GaAs匹配电路实现,通过优化前级和中间级的推动比和级间匹配电路,降低了驱动级功耗。整个模块采用低热膨胀率、高热导率的铜-钼-铜(CMC)载板实现,解决了管芯热匹配和热传导的问题。通过这三种技术途径有效实现了模块的高效率、小型化和低成本。测试表明,该器件在5.2～5.9GHz频带内、28V工作电压下,饱和输出功率达到了200 W以上,此时功率增益为26dB、典型功率附加效率(PAE)为50%。展开更多
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA016801)
文摘An X-band inverse class-F power amplifier is realized by a 1-mm Al Ga N/Ga N high electron mobility transistor（HEMT）.The intrinsic and parasitic components inside the transistor,especially output capacitor Cds,influence the harmonic impedance heavily at the X-band,so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane.Experiment results show that,in the continuous-wave mode,the power amplifier achieves 61.7% power added efficiency（PAE）,which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT.To the best of our knowledge,this is the first inverse class-F Ga N internally-matched power amplifier,and the PAE is quite high at the X-band.
基金supported by the National Natural Science Foundation of China(Nos.60736033,60676048).
文摘An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self- developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an Al- GaN/GaN HEMT, Wilkinson power hybrids, a DC-bias circuit and microstrip matching circuits. For the stability of the amplifier module, special RC networks at the input and output, a resistor between the DC power supply and a transistor gate at the input and 3λ/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%, and an output power of 42.93 dBm; the power gain compression is 2 dB. For a four-way combined solid-state amplifier, the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET, the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier.
基金Project supported by the National Natural Science Foundation of China (Nos.60736033,60676048)
文摘Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.
文摘报道了一款采用两级拓扑结构的2～4GHz宽带高功率单片微波功率放大器芯片。放大器采用了微带结构,并使用电抗匹配进行设计,重点在于宽带功率效率平坦化设计。经匹配优化后放大器在2～4GHz整个频带内脉冲输出功率大于35W,小信号增益达到22dB,在2.4GHz频点处峰值输出功率达到40W,对应的功率附加效率为35%。功率放大器芯片采用0.25μm GaN HEMT76.2mm圆片工艺制造,芯片尺寸为2.7mm×2.3mm。
文摘报道了一款采用三级放大结构的Ku波段高效率GaN功率放大器芯片。放大器设计中通过电路布局优化改善功放芯片内部相位一致性,提高末级晶胞的合成效率,最终实现整个放大器功率及效率的提升。经匹配优化后放大器在14.6~17.0GHz频带内脉冲输出功率大于20 W,功率附加效率大于36%,最高39%。功率放大器芯片采用0.25μm GaN HEMT 101.6mm(4英寸)圆片工艺制造,芯片尺寸为2.3mm×1.9mm。
文摘报道了一款采用0.35μm GaN HEMT工艺的C波段高增益功率模块。模块采用三级放大电路拓扑,正负电源结构设计。末级匹配电路采用低损耗高Q值的陶瓷片实现,通过一级L-C阻抗变换和两级威尔金森功分器,既进行了阻抗匹配又实现了功率合成。前级和中间级匹配电路采用高集成GaAs匹配电路实现,通过优化前级和中间级的推动比和级间匹配电路,降低了驱动级功耗。整个模块采用低热膨胀率、高热导率的铜-钼-铜(CMC)载板实现,解决了管芯热匹配和热传导的问题。通过这三种技术途径有效实现了模块的高效率、小型化和低成本。测试表明,该器件在5.2～5.9GHz频带内、28V工作电压下,饱和输出功率达到了200 W以上,此时功率增益为26dB、典型功率附加效率(PAE)为50%。
