[Objective]The aim was to reveal the spatial distribution characteristics of total nutrients in soil and provide a theoretical basis for farmland management and improvement of crop yield. [Method]GIS technique was use...[Objective]The aim was to reveal the spatial distribution characteristics of total nutrients in soil and provide a theoretical basis for farmland management and improvement of crop yield. [Method]GIS technique was used to analyze the spatial distribution characteristics of total C,total N,total P and total K for different soil layers in Liaoning Province. [Result]The results showed that the content of total C,total N,total P decrease from east to west,but the content of total K was high in north district of Liaoning Province. The content of total C,total N,total P and total K was higher in soil surface （0-20 cm） than the lower （20-40 cm）. Total K varied less with soil depth,and its mean content was respectively 17.64 g/kg and 17.08 g/kg for soil surface and soil lower layer. [Conclusion]The results of the distribution of soil total nutrients in different soil layers supplied a theory basis for farmland management.展开更多
We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideal...We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.展开更多
基金Supported by Public Project of Science and Technology Ministry(SYKYYW200903)The Ecological Carrying Capacity and Region Ecological Security Regulation of Northeast Industrial Base(2004CB418507)~~
文摘[Objective]The aim was to reveal the spatial distribution characteristics of total nutrients in soil and provide a theoretical basis for farmland management and improvement of crop yield. [Method]GIS technique was used to analyze the spatial distribution characteristics of total C,total N,total P and total K for different soil layers in Liaoning Province. [Result]The results showed that the content of total C,total N,total P decrease from east to west,but the content of total K was high in north district of Liaoning Province. The content of total C,total N,total P and total K was higher in soil surface （0-20 cm） than the lower （20-40 cm）. Total K varied less with soil depth,and its mean content was respectively 17.64 g/kg and 17.08 g/kg for soil surface and soil lower layer. [Conclusion]The results of the distribution of soil total nutrients in different soil layers supplied a theory basis for farmland management.
文摘We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.
