Cubic boron nitride(c-BN)thin films were deposited on Si substrates by applying ion beam assisted deposition and then doped by S ion implantation.To produce a uniform depth profile of S ions in c-BN films,the implanta...Cubic boron nitride(c-BN)thin films were deposited on Si substrates by applying ion beam assisted deposition and then doped by S ion implantation.To produce a uniform depth profile of S ions in c-BN films,the implantation was carried out for the multiple energies.A slight degradation of c-BN crystallinity resulted from ion implantation can be recovered by thermal annealing,keeping the cubic phase content as high as 92%.The resistance reduces from 1010X for the as-deposited c-BN film to 108X after an S implantation of 5 9 1014ions cm-2and annealing at 1,173 K,suggesting an electrical doping effect of S dopant.The electrical resistance of the S-doped c-BN thin film decreases with increasing temperature,indicating semiconductor characteristics.The activation energy of S dopant is estimated to be 0.28±0.01 eV from the temperature dependence of resistance.展开更多
Boron nitride （BN） films for high-frequency surface acoustic wave （SAW） devices are deposited on Ti/AI/Si（111） wafers by radio frequency （RF） magnetron sputtering. The structure of BN films is investigated by ...Boron nitride （BN） films for high-frequency surface acoustic wave （SAW） devices are deposited on Ti/AI/Si（111） wafers by radio frequency （RF） magnetron sputtering. The structure of BN films is investigated by Fourier transform infrared （FrlR） spectroscopy and X-ray diffraction （XRD） spectra, and the surface morphology and piezoelectric properties of BN films are characterized by atomic force microscopy （AFM）. The results show that when the flow ratio of nitrogen and argon is 2：18, the cubic BN （c-BN） film is deposited with high purity and c-axis orientation, and when the flow ratio of nitrogen and argon is 4：20, the hexagonal BN （h-BN） film is deposited with high c-axis orientation. Both particles are uniform and compact, and the roughnesses are 1.5 nm and 2.29 nm, respectively. The h-BN films have better piezoelectric response and distribu- tion than the c-BN films.展开更多
基金supported by the National Basic Research Program of China(2012CB619306)the National Natural Science Foundation of China(61376007)
文摘Cubic boron nitride(c-BN)thin films were deposited on Si substrates by applying ion beam assisted deposition and then doped by S ion implantation.To produce a uniform depth profile of S ions in c-BN films,the implantation was carried out for the multiple energies.A slight degradation of c-BN crystallinity resulted from ion implantation can be recovered by thermal annealing,keeping the cubic phase content as high as 92%.The resistance reduces from 1010X for the as-deposited c-BN film to 108X after an S implantation of 5 9 1014ions cm-2and annealing at 1,173 K,suggesting an electrical doping effect of S dopant.The electrical resistance of the S-doped c-BN thin film decreases with increasing temperature,indicating semiconductor characteristics.The activation energy of S dopant is estimated to be 0.28±0.01 eV from the temperature dependence of resistance.
基金supported by the National Natural Science Foundation of China (Nos.50972105 and 60806030)the Tianjin Natural Science Foundation (Nos. 09JCZDJC16500 and 08JCYBJC14600)
文摘Boron nitride （BN） films for high-frequency surface acoustic wave （SAW） devices are deposited on Ti/AI/Si（111） wafers by radio frequency （RF） magnetron sputtering. The structure of BN films is investigated by Fourier transform infrared （FrlR） spectroscopy and X-ray diffraction （XRD） spectra, and the surface morphology and piezoelectric properties of BN films are characterized by atomic force microscopy （AFM）. The results show that when the flow ratio of nitrogen and argon is 2：18, the cubic BN （c-BN） film is deposited with high purity and c-axis orientation, and when the flow ratio of nitrogen and argon is 4：20, the hexagonal BN （h-BN） film is deposited with high c-axis orientation. Both particles are uniform and compact, and the roughnesses are 1.5 nm and 2.29 nm, respectively. The h-BN films have better piezoelectric response and distribu- tion than the c-BN films.
