This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C6...This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/（V. s） could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible ＇hysteresis effect＇ contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.展开更多
Organic thin film transistors with C6O as an n-type semiconductor have been fabricated. A tantalum pentoxide （Ta2O5）/poly-methylmethacrylate （PMMA） double-layer structured gate dielectric was used. The Ta2O5 layer...Organic thin film transistors with C6O as an n-type semiconductor have been fabricated. A tantalum pentoxide （Ta2O5）/poly-methylmethacrylate （PMMA） double-layer structured gate dielectric was used. The Ta2O5 layer was prepared by using a simple solution-based and economical anodization technique. Our results demonstrate that double gate insulators can combine the advantage of Ta2O5 with high dielectric constant and polymer insulator for a better interface with the organic semiconductor. The performance of the device can be improved obviously with double gate insulators, compared to that obtained by using a single Ta205 or PMMA insulator. Then, a good performance n-type OTFT, which can work at 10 V with mobility, threshold voltage and on/off current ratio of, respectively, 0.26 cm2/（V.S）, 3.2 V and 8.31 × 10^4, was obtained. Moreover, such an OTFT shows a negligible ＂hysteresis effect＂ contributing to the hydroxyl-free insulator surface.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 60676033)
文摘This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/（V. s） could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible ＇hysteresis effect＇ contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.
基金Project supported by the Fundamental Research Funds for the Central Universities(No.CDJZR10160010)
文摘Organic thin film transistors with C6O as an n-type semiconductor have been fabricated. A tantalum pentoxide （Ta2O5）/poly-methylmethacrylate （PMMA） double-layer structured gate dielectric was used. The Ta2O5 layer was prepared by using a simple solution-based and economical anodization technique. Our results demonstrate that double gate insulators can combine the advantage of Ta2O5 with high dielectric constant and polymer insulator for a better interface with the organic semiconductor. The performance of the device can be improved obviously with double gate insulators, compared to that obtained by using a single Ta205 or PMMA insulator. Then, a good performance n-type OTFT, which can work at 10 V with mobility, threshold voltage and on/off current ratio of, respectively, 0.26 cm2/（V.S）, 3.2 V and 8.31 × 10^4, was obtained. Moreover, such an OTFT shows a negligible ＂hysteresis effect＂ contributing to the hydroxyl-free insulator surface.
