Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors, leading to a distinct voltage drop at the interface. Here, w...Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors, leading to a distinct voltage drop at the interface. Here, we demonstrate enhanced performance of n-channel field-effect transistors based on solution-grown C60 single-crystalline ribbons by introducing an interlayer of a conjugated polyelectrolyte （CPE） composed of poly[（9,9-bis（3＇-（（N,N-dimethyl）-N-ethylammonium）-propyl）-2,7-fluorene）- alt-2,7-（9,9-dioctylfluorene）] dibromide （PFN＋Br-）. The PFN＋Br- interlayer greatly improves the charge injection. Consequently, the electron mobility is promoted up to 5.60 cm2 V-1 s-1 and the threshold voltage decreased dramatically with the minimum of 4.90 V.展开更多
基金supported by the National Basic Research Program of China(2014CB643503)the National Natural Science Foundation of China(51625304,51373150,51461165301)the Zhejiang Province Natural Science Foundation(LZ13E030002)
文摘Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors, leading to a distinct voltage drop at the interface. Here, we demonstrate enhanced performance of n-channel field-effect transistors based on solution-grown C60 single-crystalline ribbons by introducing an interlayer of a conjugated polyelectrolyte （CPE） composed of poly[（9,9-bis（3＇-（（N,N-dimethyl）-N-ethylammonium）-propyl）-2,7-fluorene）- alt-2,7-（9,9-dioctylfluorene）] dibromide （PFN＋Br-）. The PFN＋Br- interlayer greatly improves the charge injection. Consequently, the electron mobility is promoted up to 5.60 cm2 V-1 s-1 and the threshold voltage decreased dramatically with the minimum of 4.90 V.
