为进一步了解在容性耦合等离子体放电时的放电机理与入射到极板处的粒子状态,通过Particle-In-Cell/Monte Carlo Collision(PIC/MCC)程序模拟氩气与甲烷混合气体放电,分别对不同Ar/CH_(4)比例和不同极板间隙条件下的电子密度、CH_(4)^(+...为进一步了解在容性耦合等离子体放电时的放电机理与入射到极板处的粒子状态,通过Particle-In-Cell/Monte Carlo Collision(PIC/MCC)程序模拟氩气与甲烷混合气体放电,分别对不同Ar/CH_(4)比例和不同极板间隙条件下的电子密度、CH_(4)^(+)、CH_(3)^(+)基团粒子浓度、电子能量概率(EEPF)分布,以及对到达极板边界粒子的能量角度分布和粒子种类进行模拟计算。模拟结果表明:在固定Ar/CH_(4)为9∶1时随着极板间距的增大,放电中心的电子密度、Ar^(+)、CH_(2)^(-)和H^(-)离子密度均呈现先下降后上升的趋势,而CH_(4)^(+)与CH_(3)^(+)离子密度变化趋势正好相反;极板间距增大时,电子能量概率分布由双麦克斯韦分布变为单麦克斯韦分布;到达极板中电子占比较大,随极板间距的变小,到达极板处的Ar^(+)概率先降低后升高,到达极板的CH_(4)^(+)、CH_(3)^(+)和CH_(2)^(+)离子比例随极板间距增加而增加。在固定极板间距时,随CH_(4)含量的增加,放电中心的电子密度、Ar^(+)密度均呈现下降趋势,CH_(4)^(+)、CH_(3)^(+)、CH_(2)^(-)和H^(-)离子的密度均呈上升趋势;极板间距的变化对EEPF分布的影响比CH_(4)比例变化的影响更加明显;随CH_(4)含量的增加,到达极板的电子占比变化不明显,Ar^(+)离子的占比明显减小,而到达极板处的CH_(4)^(+)、CH_(3)^(+)、CH_(2)^(+)和其余的离子比例均有增加。展开更多
The pattern of ITO transparent electrode of pixel cells in TFT-AMLCD is a critical step in the manufacturing process of flat panel display devices,the development of suitable plasma reactive ion etching is necessary t...The pattern of ITO transparent electrode of pixel cells in TFT-AMLCD is a critical step in the manufacturing process of flat panel display devices,the development of suitable plasma reactive ion etching is necessary to achieve high resolution display.In this work we investigated the Ar/CF 4 plasma etching of ITO as function of different parameters.We demonstrated the ability of this plasma to etch ITO and achieved an etching rate of about 3.73 nm/min,which is expected to increase for long pumping down period,and also through addition of hydrogen in the plasma.Furthermore we described the ITO etching mechanism in Ar/CF 4 plasma.The investigation of selectivity showed to be very low over silicon nitride and silicon dioxide but very high over aluminum.展开更多
文摘为进一步了解在容性耦合等离子体放电时的放电机理与入射到极板处的粒子状态,通过Particle-In-Cell/Monte Carlo Collision(PIC/MCC)程序模拟氩气与甲烷混合气体放电,分别对不同Ar/CH_(4)比例和不同极板间隙条件下的电子密度、CH_(4)^(+)、CH_(3)^(+)基团粒子浓度、电子能量概率(EEPF)分布,以及对到达极板边界粒子的能量角度分布和粒子种类进行模拟计算。模拟结果表明:在固定Ar/CH_(4)为9∶1时随着极板间距的增大,放电中心的电子密度、Ar^(+)、CH_(2)^(-)和H^(-)离子密度均呈现先下降后上升的趋势,而CH_(4)^(+)与CH_(3)^(+)离子密度变化趋势正好相反;极板间距增大时,电子能量概率分布由双麦克斯韦分布变为单麦克斯韦分布;到达极板中电子占比较大,随极板间距的变小,到达极板处的Ar^(+)概率先降低后升高,到达极板的CH_(4)^(+)、CH_(3)^(+)和CH_(2)^(+)离子比例随极板间距增加而增加。在固定极板间距时,随CH_(4)含量的增加,放电中心的电子密度、Ar^(+)密度均呈现下降趋势,CH_(4)^(+)、CH_(3)^(+)、CH_(2)^(-)和H^(-)离子的密度均呈上升趋势;极板间距的变化对EEPF分布的影响比CH_(4)比例变化的影响更加明显;随CH_(4)含量的增加,到达极板的电子占比变化不明显,Ar^(+)离子的占比明显减小,而到达极板处的CH_(4)^(+)、CH_(3)^(+)、CH_(2)^(+)和其余的离子比例均有增加。
文摘The pattern of ITO transparent electrode of pixel cells in TFT-AMLCD is a critical step in the manufacturing process of flat panel display devices,the development of suitable plasma reactive ion etching is necessary to achieve high resolution display.In this work we investigated the Ar/CF 4 plasma etching of ITO as function of different parameters.We demonstrated the ability of this plasma to etch ITO and achieved an etching rate of about 3.73 nm/min,which is expected to increase for long pumping down period,and also through addition of hydrogen in the plasma.Furthermore we described the ITO etching mechanism in Ar/CF 4 plasma.The investigation of selectivity showed to be very low over silicon nitride and silicon dioxide but very high over aluminum.
