This paper investigated the radical behaviour of the plasma of a mixture of methane （CH4） and decamethylcyclopentasiloxane （DMCPS） by optical emission spectroscopy. The plasma was generated by electron cyclotron r...This paper investigated the radical behaviour of the plasma of a mixture of methane （CH4） and decamethylcyclopentasiloxane （DMCPS） by optical emission spectroscopy. The plasma was generated by electron cyclotron resonance （ECR） discharge and was used for depositing porous SiCOH low dielectric-constant film. In the ECR discharge plasma, CH, H, H2, C2, Si, O and SiO radicals were obtained. The CH, H and C2 radicals were from the dissociation of CH4, while the SiO. Si and O radicals from the dissociation of the Si-O chain. CHx radicals absorbed in the film were thermally unstable and could be removed by annealing. The dissociation of the Si-O chain led to an increase in a ratio of the Si-Ocage to Si-Onetwork. The removed of CHx radicals and the increased Si-Ocage to Si-Onetwork ratio were beneficial for reducing the film density and dielectric constant.展开更多
基金National Natural Science Foundation of China(Nos.10575074,10635010)
文摘This paper investigated the radical behaviour of the plasma of a mixture of methane （CH4） and decamethylcyclopentasiloxane （DMCPS） by optical emission spectroscopy. The plasma was generated by electron cyclotron resonance （ECR） discharge and was used for depositing porous SiCOH low dielectric-constant film. In the ECR discharge plasma, CH, H, H2, C2, Si, O and SiO radicals were obtained. The CH, H and C2 radicals were from the dissociation of CH4, while the SiO. Si and O radicals from the dissociation of the Si-O chain. CHx radicals absorbed in the film were thermally unstable and could be removed by annealing. The dissociation of the Si-O chain led to an increase in a ratio of the Si-Ocage to Si-Onetwork. The removed of CHx radicals and the increased Si-Ocage to Si-Onetwork ratio were beneficial for reducing the film density and dielectric constant.
