Simple models are proposed for the calculation of refractive index n and electronic polarizability α of AⅠBⅢC2Ⅵ and AⅡBⅣC2Ⅴ compounds of groups of chalcopyrite semiconductors from their energy gap data. The val...Simple models are proposed for the calculation of refractive index n and electronic polarizability α of AⅠBⅢC2Ⅵ and AⅡBⅣC2Ⅴ compounds of groups of chalcopyrite semiconductors from their energy gap data. The values family and 12 compounds of AⅡBⅣC2Ⅴ family are calculated for the work. The proposed models are applicable for the whole range of energy gap materials. The calculated values are compared with the available experimental and reported values. A fairly good agreement between them is obtained.展开更多
Composition dependence of quaternary CuIn1-x GaxSe2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm^-1 for CuInSe2 to 185cm^-1 for CuGaSe2 in an app...Composition dependence of quaternary CuIn1-x GaxSe2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm^-1 for CuInSe2 to 185cm^-1 for CuGaSe2 in an approximately polynomial curve other than a linear curve, indicating existence of asymmetric distribution of Ga and In on a microscopic scale in films. With Ga content x 〉 0.3, the significantly broadening and intensity decrease of A1 modes suggest the degradation of crystalline quality of chalcopyrite phase. Additionally, the quenching of additional Raman band at 183cm^-1 for the Ga-rich films reveals that CuAu-ordered phase can coexist in nominal chalcopyrite CuInSe2 films but not in CuGaSe2, due to Ga inhibition effect.展开更多
文摘Simple models are proposed for the calculation of refractive index n and electronic polarizability α of AⅠBⅢC2Ⅵ and AⅡBⅣC2Ⅴ compounds of groups of chalcopyrite semiconductors from their energy gap data. The values family and 12 compounds of AⅡBⅣC2Ⅴ family are calculated for the work. The proposed models are applicable for the whole range of energy gap materials. The calculated values are compared with the available experimental and reported values. A fairly good agreement between them is obtained.
基金Supported by China Postdoctoral Science Foundation under Grant No 2005037539, and the National High Technology Programme of China under Grant No 2004AA513020.
文摘Composition dependence of quaternary CuIn1-x GaxSe2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm^-1 for CuInSe2 to 185cm^-1 for CuGaSe2 in an approximately polynomial curve other than a linear curve, indicating existence of asymmetric distribution of Ga and In on a microscopic scale in films. With Ga content x 〉 0.3, the significantly broadening and intensity decrease of A1 modes suggest the degradation of crystalline quality of chalcopyrite phase. Additionally, the quenching of additional Raman band at 183cm^-1 for the Ga-rich films reveals that CuAu-ordered phase can coexist in nominal chalcopyrite CuInSe2 films but not in CuGaSe2, due to Ga inhibition effect.
