氮化硅是一种良好的载体,具有较高的水热稳定性和机械稳定性,其表面的氨基基团能够较好地锚定金属,显著提高金属分散度。但是,商品氮化硅比表面积较低,对金属分散作用仍然有限。因此,以自制的高比表面积氮化硅(Si_(3)N_(4))为载体,通过...氮化硅是一种良好的载体,具有较高的水热稳定性和机械稳定性,其表面的氨基基团能够较好地锚定金属,显著提高金属分散度。但是,商品氮化硅比表面积较低,对金属分散作用仍然有限。因此,以自制的高比表面积氮化硅(Si_(3)N_(4))为载体,通过浸渍法制备了不同Ru负载量(质量分数分别为0.5%、1.0%和2.0%)的催化剂(分别为0.5%Ru/Si_(3)N_(4)、1.0%Ru/Si_(3)N_(4)和2.0%Ru/Si_(3)N_(4)),并以商品氮化硅(Si_(3)N_(4)-C)为载体制备了2.0%Ru/Si_(3)N_(4)-C催化剂作为对照组。表征了催化剂的理化性质,测试了其在300℃、0.1 MPa下的CO_(2)加氢反应活性。结果显示,与Si_(3)N_(4)-C相比,Si_(3)N_(4)的比表面积较高(502 m^(2)/g),Si_(3)N_(4)作为载体显著提高了金属分散度,降低了金属粒径,催化剂暴露出更多的活性位点。0.5%Ru/Si_(3)N_(4)的金属粒径较小,展现出强的H_(2)吸附能力,H难以解吸,抑制了中间物种CO加氢生成CH_(4)。随着Ru负载量增加,金属粒径增大,催化剂的CH_(4)选择性更好。Ru/Si_(3)N_(4)系列催化剂中,2.0%Ru/Si_(3)N_(4)的CH_(4)选择性较高(98.8%)。空速为10000 m L/(g·h)时,0.5%Ru/Si_(3)N_(4)的CO选择性为88.2%。与2.0%Ru/Si_(3)N_(4)相比,2.0%Ru/Si_(3)N_(4)-C的金属粒径更大,活性位点较少,活性更低。2.0%Ru/Si_(3)N_(4)和2.0%Ru/Si_(3)N_(4)-C的CO_(2)转化率分别为53.1%和9.2%。Si_(3)N_(4)有效提高了金属分散度,提高了催化剂的CO_(2)加氢反应活性;通过调控Ru负载量控制催化剂金属粒径,可实现对产物CO或CH_(4)选择性的调控。展开更多
Today,it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells,at a lower cost.Therefore,the aim of this paper...Today,it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells,at a lower cost.Therefore,the aim of this paper is to analyze CH_(3)NH_(3)PbI_(3) and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells.CH_(3)NH_(3)PbI_(3) and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor.We propose to combine these two materials since CH_(3)NH_(3)PbI_(3) is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material.The photoelectric parameters of n-CH_(3)NH_(3)PbI_(3)/p-Si,n-ZnO/p-Si,and n-Si/p-Si solar cells have been studied in the range of 20–200 nm of emitter layer thickness.It has been found that the short circuit current for CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si solar cells is almost the same when the emitter layer thickness is in the range of 20–100 nm.Additionally,when the emitter layer thickness is greater than 100 nm,the short circuit current of CH_(3)NH_(3)PbI_(3)/p-Si exceeds that of n-ZnO/p-Si.The optimal emitter layer thickness for n-CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si was found equal to 80 nm.Using this value,the short-circuit current and the fill factor were estimated around 18.27 mA/cm^(2) and 0.77 for n-CH_(3)NH_(3)PbI_(3)/p-Si and 18.06 mA/cm^(2) and 0.73 for n-ZnO/p-Si.Results show that the efficiency of n-CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si solar cells with an emitter layer thickness of 80 nm are 1.314 and 1.298 times greater than efficiency of traditional n-Si/p-Si for the same sizes.These findings will help perovskites materials to be more appealing in the PV industry and accelerate their development to become a viable alternative in the renewable energy sector.展开更多
文摘氮化硅是一种良好的载体,具有较高的水热稳定性和机械稳定性,其表面的氨基基团能够较好地锚定金属,显著提高金属分散度。但是,商品氮化硅比表面积较低,对金属分散作用仍然有限。因此,以自制的高比表面积氮化硅(Si_(3)N_(4))为载体,通过浸渍法制备了不同Ru负载量(质量分数分别为0.5%、1.0%和2.0%)的催化剂(分别为0.5%Ru/Si_(3)N_(4)、1.0%Ru/Si_(3)N_(4)和2.0%Ru/Si_(3)N_(4)),并以商品氮化硅(Si_(3)N_(4)-C)为载体制备了2.0%Ru/Si_(3)N_(4)-C催化剂作为对照组。表征了催化剂的理化性质,测试了其在300℃、0.1 MPa下的CO_(2)加氢反应活性。结果显示,与Si_(3)N_(4)-C相比,Si_(3)N_(4)的比表面积较高(502 m^(2)/g),Si_(3)N_(4)作为载体显著提高了金属分散度,降低了金属粒径,催化剂暴露出更多的活性位点。0.5%Ru/Si_(3)N_(4)的金属粒径较小,展现出强的H_(2)吸附能力,H难以解吸,抑制了中间物种CO加氢生成CH_(4)。随着Ru负载量增加,金属粒径增大,催化剂的CH_(4)选择性更好。Ru/Si_(3)N_(4)系列催化剂中,2.0%Ru/Si_(3)N_(4)的CH_(4)选择性较高(98.8%)。空速为10000 m L/(g·h)时,0.5%Ru/Si_(3)N_(4)的CO选择性为88.2%。与2.0%Ru/Si_(3)N_(4)相比,2.0%Ru/Si_(3)N_(4)-C的金属粒径更大,活性位点较少,活性更低。2.0%Ru/Si_(3)N_(4)和2.0%Ru/Si_(3)N_(4)-C的CO_(2)转化率分别为53.1%和9.2%。Si_(3)N_(4)有效提高了金属分散度,提高了催化剂的CO_(2)加氢反应活性;通过调控Ru负载量控制催化剂金属粒径,可实现对产物CO或CH_(4)选择性的调控。
基金supported by Fundamental Research Project of Uzbekistan(FZ-2020092973).
文摘Today,it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells,at a lower cost.Therefore,the aim of this paper is to analyze CH_(3)NH_(3)PbI_(3) and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells.CH_(3)NH_(3)PbI_(3) and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor.We propose to combine these two materials since CH_(3)NH_(3)PbI_(3) is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material.The photoelectric parameters of n-CH_(3)NH_(3)PbI_(3)/p-Si,n-ZnO/p-Si,and n-Si/p-Si solar cells have been studied in the range of 20–200 nm of emitter layer thickness.It has been found that the short circuit current for CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si solar cells is almost the same when the emitter layer thickness is in the range of 20–100 nm.Additionally,when the emitter layer thickness is greater than 100 nm,the short circuit current of CH_(3)NH_(3)PbI_(3)/p-Si exceeds that of n-ZnO/p-Si.The optimal emitter layer thickness for n-CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si was found equal to 80 nm.Using this value,the short-circuit current and the fill factor were estimated around 18.27 mA/cm^(2) and 0.77 for n-CH_(3)NH_(3)PbI_(3)/p-Si and 18.06 mA/cm^(2) and 0.73 for n-ZnO/p-Si.Results show that the efficiency of n-CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si solar cells with an emitter layer thickness of 80 nm are 1.314 and 1.298 times greater than efficiency of traditional n-Si/p-Si for the same sizes.These findings will help perovskites materials to be more appealing in the PV industry and accelerate their development to become a viable alternative in the renewable energy sector.
