The lead-free perovskite solar cells(PSCs) have drawn a great deal of research interest due to the Pb toxicity of the lead halide perovskite.CHNHSnIis a viable alternative to CHNHPbX,because it has a narrower band gap...The lead-free perovskite solar cells(PSCs) have drawn a great deal of research interest due to the Pb toxicity of the lead halide perovskite.CHNHSnIis a viable alternative to CHNHPbX,because it has a narrower band gap of 1.3 eV and a wider visible absorption spectrum than the lead halide perovskite.The progress of fabricating tin iodide PSCs with good stability has stimulated the studies of these CHNHSnIbased cells greatly.In the paper,we study the influences of various parameters on the solar cell performance through theoretical analysis and device simulation.It is found in the simulation that the solar cell performance can be improved to some extent by adjusting the doping concentration of the perovskite absorption layer and the electron affinity of the buffer and HTM,while the reduction of the defect density of the perovskite absorption layer significantly improves the cell performance.By further optimizing the parameters of the doping concentration(1.3 × 10cm~3) and the defect density(1 × 10cm~3) of perovskite absorption layer,and the electron affinity of buffer(4.0 eV) and HTM(2.6 eV),we finally obtain some encouraging results of the Jof 31.59 mA/cm~2,Vof 0.92 V,FF of 79.99%,and PCE of 23.36%.The results show that the lead-free CHNHSnIPSC is a potential environmentally friendly solar cell with high efficiency.Improving the Snstability and reducing the defect density of CHNHSnIare key issues for the future research,which can be solved by improving the fabrication and encapsulation process of the cell.展开更多
Today,it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells,at a lower cost.Therefore,the aim of this paper...Today,it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells,at a lower cost.Therefore,the aim of this paper is to analyze CH_(3)NH_(3)PbI_(3) and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells.CH_(3)NH_(3)PbI_(3) and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor.We propose to combine these two materials since CH_(3)NH_(3)PbI_(3) is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material.The photoelectric parameters of n-CH_(3)NH_(3)PbI_(3)/p-Si,n-ZnO/p-Si,and n-Si/p-Si solar cells have been studied in the range of 20–200 nm of emitter layer thickness.It has been found that the short circuit current for CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si solar cells is almost the same when the emitter layer thickness is in the range of 20–100 nm.Additionally,when the emitter layer thickness is greater than 100 nm,the short circuit current of CH_(3)NH_(3)PbI_(3)/p-Si exceeds that of n-ZnO/p-Si.The optimal emitter layer thickness for n-CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si was found equal to 80 nm.Using this value,the short-circuit current and the fill factor were estimated around 18.27 mA/cm^(2) and 0.77 for n-CH_(3)NH_(3)PbI_(3)/p-Si and 18.06 mA/cm^(2) and 0.73 for n-ZnO/p-Si.Results show that the efficiency of n-CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si solar cells with an emitter layer thickness of 80 nm are 1.314 and 1.298 times greater than efficiency of traditional n-Si/p-Si for the same sizes.These findings will help perovskites materials to be more appealing in the PV industry and accelerate their development to become a viable alternative in the renewable energy sector.展开更多
The methylammonium lead triiodide(CH_(3)NH_(3)PbI_(3))-based perovskite shows a great alluring prospect in areas of solar cells, lasers, photodetectors, and light emitting diodes owing to their excellent optical and e...The methylammonium lead triiodide(CH_(3)NH_(3)PbI_(3))-based perovskite shows a great alluring prospect in areas of solar cells, lasers, photodetectors, and light emitting diodes owing to their excellent optical and electrical advantages. However,it is very sensitive to the surrounding oxygen and moisture, which limits its development seriously. It is urgent to spare no effort to enhance its optical and electrical stability for further application. In this paper, we synthesize the MAPbI_(3) perovskite film on the glass substrate with/without the ionic liquid(IL) of 1-Butyl-3-methylimidazolium tetrafluoroborate(BMIMBF_(4)) by a simple two-step sequential solution method. The additive of BMIMBF_(4)can improve the quality of crystal structure. Moreover, the photo-luminescence(PL) intensity of MAPbI_(3) film with BMIMBF_(4) is much stronger than the pure MAPbI_(3) film after a week in the air, which is almost ten-fold of the pure one. Meanwhile, under the illumination of 405-nm continuous wave(CW) laser, the fluorescent duration of the MAPbI_(3) film with BMIMBF_(4) is approximately 2.75 min, while the pure MAPbI;film is only about 6 s. In fact, ionic liquid of BMIMBF_(4) in the perovskite film plays a role of passivation, which prevents the dissolution of MAPbI_(3) into CH_(3)NH_(3)and PbI_(2) and thus enhances the stability of environment. In addition, the ionic liquid of BMIMBF;possesses high ionic conductivity, which accelerates the electron transport, so it is beneficial for the perovskite film in the areas of solar cells, photodetectors, and lasers. This interesting experiment provides a promising way to develop the perovskite’s further application.展开更多
文摘通过CdBr_(2)对全无机CsPbBr_(3)钙钛矿薄膜进行钝化处理,研究不同浓度CdBr_(2)的异丙醇溶液对全无机CsPbBr_(3)钙钛矿太阳能电池光电性能的影响.结果表明:CdBr_(2)钝化CsPbBr_(3)钙钛矿表面后,降低了钙钛矿表面的Br空位缺陷密度,抑制了非辐射复合,促进了光生电子和空穴的抽取和传输,因此降低了界面光电子复合损失,使全无机钙钛矿太阳能电池器件的光电转换效率从6.58%提高到8.19%,开路电压从1.368 V提高到1.531 V.
基金supported by the Graduate Student Education Teaching Reform Project,China(Grant No.JG201512)the Young Teachers Research Project of Yanshan University,China(Grant No.13LGB028)
文摘The lead-free perovskite solar cells(PSCs) have drawn a great deal of research interest due to the Pb toxicity of the lead halide perovskite.CHNHSnIis a viable alternative to CHNHPbX,because it has a narrower band gap of 1.3 eV and a wider visible absorption spectrum than the lead halide perovskite.The progress of fabricating tin iodide PSCs with good stability has stimulated the studies of these CHNHSnIbased cells greatly.In the paper,we study the influences of various parameters on the solar cell performance through theoretical analysis and device simulation.It is found in the simulation that the solar cell performance can be improved to some extent by adjusting the doping concentration of the perovskite absorption layer and the electron affinity of the buffer and HTM,while the reduction of the defect density of the perovskite absorption layer significantly improves the cell performance.By further optimizing the parameters of the doping concentration(1.3 × 10cm~3) and the defect density(1 × 10cm~3) of perovskite absorption layer,and the electron affinity of buffer(4.0 eV) and HTM(2.6 eV),we finally obtain some encouraging results of the Jof 31.59 mA/cm~2,Vof 0.92 V,FF of 79.99%,and PCE of 23.36%.The results show that the lead-free CHNHSnIPSC is a potential environmentally friendly solar cell with high efficiency.Improving the Snstability and reducing the defect density of CHNHSnIare key issues for the future research,which can be solved by improving the fabrication and encapsulation process of the cell.
基金supported by Fundamental Research Project of Uzbekistan(FZ-2020092973).
文摘Today,it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells,at a lower cost.Therefore,the aim of this paper is to analyze CH_(3)NH_(3)PbI_(3) and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells.CH_(3)NH_(3)PbI_(3) and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor.We propose to combine these two materials since CH_(3)NH_(3)PbI_(3) is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material.The photoelectric parameters of n-CH_(3)NH_(3)PbI_(3)/p-Si,n-ZnO/p-Si,and n-Si/p-Si solar cells have been studied in the range of 20–200 nm of emitter layer thickness.It has been found that the short circuit current for CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si solar cells is almost the same when the emitter layer thickness is in the range of 20–100 nm.Additionally,when the emitter layer thickness is greater than 100 nm,the short circuit current of CH_(3)NH_(3)PbI_(3)/p-Si exceeds that of n-ZnO/p-Si.The optimal emitter layer thickness for n-CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si was found equal to 80 nm.Using this value,the short-circuit current and the fill factor were estimated around 18.27 mA/cm^(2) and 0.77 for n-CH_(3)NH_(3)PbI_(3)/p-Si and 18.06 mA/cm^(2) and 0.73 for n-ZnO/p-Si.Results show that the efficiency of n-CH_(3)NH_(3)PbI_(3)/p-Si and n-ZnO/p-Si solar cells with an emitter layer thickness of 80 nm are 1.314 and 1.298 times greater than efficiency of traditional n-Si/p-Si for the same sizes.These findings will help perovskites materials to be more appealing in the PV industry and accelerate their development to become a viable alternative in the renewable energy sector.
基金Project supported by the National Key Research and Development Program of China (Grant No. 2018YFC2001100)the Natural National Science Foundation of China (Grant No. 61574017)+1 种基金the Fundamental Research Funds for Central Universities, China (Grant No. 2017CX10007)the Open Foundation of Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University (Grant No. 2020GXYSOF08)。
文摘The methylammonium lead triiodide(CH_(3)NH_(3)PbI_(3))-based perovskite shows a great alluring prospect in areas of solar cells, lasers, photodetectors, and light emitting diodes owing to their excellent optical and electrical advantages. However,it is very sensitive to the surrounding oxygen and moisture, which limits its development seriously. It is urgent to spare no effort to enhance its optical and electrical stability for further application. In this paper, we synthesize the MAPbI_(3) perovskite film on the glass substrate with/without the ionic liquid(IL) of 1-Butyl-3-methylimidazolium tetrafluoroborate(BMIMBF_(4)) by a simple two-step sequential solution method. The additive of BMIMBF_(4)can improve the quality of crystal structure. Moreover, the photo-luminescence(PL) intensity of MAPbI_(3) film with BMIMBF_(4) is much stronger than the pure MAPbI_(3) film after a week in the air, which is almost ten-fold of the pure one. Meanwhile, under the illumination of 405-nm continuous wave(CW) laser, the fluorescent duration of the MAPbI_(3) film with BMIMBF_(4) is approximately 2.75 min, while the pure MAPbI;film is only about 6 s. In fact, ionic liquid of BMIMBF_(4) in the perovskite film plays a role of passivation, which prevents the dissolution of MAPbI_(3) into CH_(3)NH_(3)and PbI_(2) and thus enhances the stability of environment. In addition, the ionic liquid of BMIMBF;possesses high ionic conductivity, which accelerates the electron transport, so it is beneficial for the perovskite film in the areas of solar cells, photodetectors, and lasers. This interesting experiment provides a promising way to develop the perovskite’s further application.
