In this work, the AFORS-HET digital simulation software was used to calculate the electrical characteristics of the cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe<sub>2</sub>/p + -MoSe<sub>2</sub>/Mo/SLG...In this work, the AFORS-HET digital simulation software was used to calculate the electrical characteristics of the cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe<sub>2</sub>/p + -MoSe<sub>2</sub>/Mo/SLG. When the thickness of the CIGSe<sub>2</sub> absorber is between 3.5 and 1.5 μm, the efficiency of the cell with an interfacial layer of MoSe<sub>2</sub> remains almost constant, with an efficiency of about 24.6%, higher to that of a conventional cell which is 23.4% for a thickness of 1.5 μm of CIGSe<sub>2</sub>. To achieve the expected results, the MoSe<sub>2</sub> layer must be very thin less than or equal to 30 nm. In addition, a Schottky barrier height greater than 0.45 eV severely affects the fill factor and the open circuit voltage of the solar cell with MoSe<sub>2</sub> interface layer.展开更多
Back interface passivation reduces the back recombination of photogenerated electrons, whereas aggravates the blocking of hole transport towards back contact, which complicate the back interface engineering for ultrat...Back interface passivation reduces the back recombination of photogenerated electrons, whereas aggravates the blocking of hole transport towards back contact, which complicate the back interface engineering for ultrathin CIGSe solar cells with a Schottky back contact. In this work, theoretical explorations were conducted to study how the two contradictory electrical effects impact cell performance. For ultrathin CIGSe solar cells with a pronounced Schottky potential barrier(E_(h)> 0.2 eV), back interface passivation produces diverse performance evolution trends, which are highly dependent on cell structures and properties. Since a back Ga grading can screen the effect of reduced recombination of photogenerated electrons from back interface passivation, the hole blocking effect predominates and back interface passivation is not desirable. However, when the back Schottky diode merges with the main pn junction due to a reduced absorber thickness,the back potential barrier and the hole blocking effect is much reduced on this occasion. Consequently, cells exhibit the same efficiency evolution trend as ones with an Ohmic contact, where back interface passivation is always advantageous.The discoveries imply the complexity of back interface passivation and provide guidance to manipulate back interface for ultrathin CIGSe solar on TCOs with a pronounced Schottky back contact.展开更多
Chalcopyrite,copper indium gallium selenide(Cu(In,Ga)Se_(2),CIGS),as semiconductor materials,have been widely used as absorbers in thin-film solar cells,offering high power conversion efficiency(PCE)and good thermal s...Chalcopyrite,copper indium gallium selenide(Cu(In,Ga)Se_(2),CIGS),as semiconductor materials,have been widely used as absorbers in thin-film solar cells,offering high power conversion efficiency(PCE)and good thermal stability[1−3].Recently,the development of non-traditional photovoltaic(PV)devices such as semitransparent.展开更多
In the past tens of years,the power conversion efficiency of Cu(In,Ga)Se2(CIGS)has continuously improved and been one of the fastest growing photovoltaic technologies that can also help us achieve the goal of carbon e...In the past tens of years,the power conversion efficiency of Cu(In,Ga)Se2(CIGS)has continuously improved and been one of the fastest growing photovoltaic technologies that can also help us achieve the goal of carbon emissions reduction.Among several key advances,the alkali element post-deposition treatment(AlK PDT)is regarded as the most important finding in the last 10 years,which has led to the improvement of CIGS solar cell efficiency from 20.4%to 23.35%.A profound understanding of the influence of alkali element on the chemical and electrical properties of the CIGS absorber along with the underlying mechanisms is of great importance.In this review,we summarize the strategies of the alkali element doping in CIGS solar cell,the problems to be noted in the PDT process,the effects on the CdS buffer layer,the effects of different alkali elements on the structure and morphology of the CIGS absorber layer,and retrospect the progress in the CIGS solar cell with emphasis on the alkali element post deposition treatment.展开更多
This scientific paper presents a study investigating the effects of defects at the CdS/CIGS and CdS/SDL interfaces on the performance of CIGS solar cells. The objective of this study is to analyze the influence of def...This scientific paper presents a study investigating the effects of defects at the CdS/CIGS and CdS/SDL interfaces on the performance of CIGS solar cells. The objective of this study is to analyze the influence of defects at the interface between the CdS buffer layer and the CIGS absorber, as well as the surface defect layer (SDL), on CIGS solar cell performance. The study explores three key aspects: the impact of the conduction band offset (CBO) at the CdS/CIGS interface, the effects of interface defects and defect density on performance, and the combined influence of CBO and defect density at the CdS/ SDL and SDL/CIGS interfaces. For interface defects not exceeding 10<sup>13</sup> cm<sup>-2</sup>, we obtained a good efficiency of 22.9% when -0.1 eV analyzing the quality of CdS/SDL and SDL/CIGS junctions, it appears that defects at the SDL/CIGS interface have very little impact on the performances of the CIGS solar cell. By optimizing the electrical parameters of the CdS/SDL interface defects, we achieved a conversion efficiency of 23.1% when -0.05 eV < CBO < 0.05 eV.展开更多
文摘In this work, the AFORS-HET digital simulation software was used to calculate the electrical characteristics of the cell/n-ZnO/i-ZnO/n-Zn (O, S)/p-CIGSe<sub>2</sub>/p + -MoSe<sub>2</sub>/Mo/SLG. When the thickness of the CIGSe<sub>2</sub> absorber is between 3.5 and 1.5 μm, the efficiency of the cell with an interfacial layer of MoSe<sub>2</sub> remains almost constant, with an efficiency of about 24.6%, higher to that of a conventional cell which is 23.4% for a thickness of 1.5 μm of CIGSe<sub>2</sub>. To achieve the expected results, the MoSe<sub>2</sub> layer must be very thin less than or equal to 30 nm. In addition, a Schottky barrier height greater than 0.45 eV severely affects the fill factor and the open circuit voltage of the solar cell with MoSe<sub>2</sub> interface layer.
基金Project supported by the National Natural Science Foundation of China (Grant No. 51802240)。
文摘Back interface passivation reduces the back recombination of photogenerated electrons, whereas aggravates the blocking of hole transport towards back contact, which complicate the back interface engineering for ultrathin CIGSe solar cells with a Schottky back contact. In this work, theoretical explorations were conducted to study how the two contradictory electrical effects impact cell performance. For ultrathin CIGSe solar cells with a pronounced Schottky potential barrier(E_(h)> 0.2 eV), back interface passivation produces diverse performance evolution trends, which are highly dependent on cell structures and properties. Since a back Ga grading can screen the effect of reduced recombination of photogenerated electrons from back interface passivation, the hole blocking effect predominates and back interface passivation is not desirable. However, when the back Schottky diode merges with the main pn junction due to a reduced absorber thickness,the back potential barrier and the hole blocking effect is much reduced on this occasion. Consequently, cells exhibit the same efficiency evolution trend as ones with an Ohmic contact, where back interface passivation is always advantageous.The discoveries imply the complexity of back interface passivation and provide guidance to manipulate back interface for ultrathin CIGSe solar on TCOs with a pronounced Schottky back contact.
基金This work is supported by the National Natural Science Foundation of China(22075150)the National Key Research and Development Program of China(2019YFE0118100)+2 种基金L.Ding thanks the National Key Research and Development Program of China(2022YFB3803300)the open research fund of Songshan Lake Materials Laboratory(2021SLABFK02)the National Natural Science Foundation of China(21961160720).
文摘Chalcopyrite,copper indium gallium selenide(Cu(In,Ga)Se_(2),CIGS),as semiconductor materials,have been widely used as absorbers in thin-film solar cells,offering high power conversion efficiency(PCE)and good thermal stability[1−3].Recently,the development of non-traditional photovoltaic(PV)devices such as semitransparent.
基金supported by the National Key R&D Program of China Grant(no.2018YFB1500200)the National Natural Science Foundation of China under Grant(nos.61804159 and 52173243)+2 种基金the Natural Science Foundation of Guangdong Province,Guangzhou,China(no.2021A1515011409)Shenzhen&Hong Kong Joint Research Program(no.SGDX20201103095605015)SIAT-CUHK Joint Laboratory of Photovoltaic Solar Energy.
文摘In the past tens of years,the power conversion efficiency of Cu(In,Ga)Se2(CIGS)has continuously improved and been one of the fastest growing photovoltaic technologies that can also help us achieve the goal of carbon emissions reduction.Among several key advances,the alkali element post-deposition treatment(AlK PDT)is regarded as the most important finding in the last 10 years,which has led to the improvement of CIGS solar cell efficiency from 20.4%to 23.35%.A profound understanding of the influence of alkali element on the chemical and electrical properties of the CIGS absorber along with the underlying mechanisms is of great importance.In this review,we summarize the strategies of the alkali element doping in CIGS solar cell,the problems to be noted in the PDT process,the effects on the CdS buffer layer,the effects of different alkali elements on the structure and morphology of the CIGS absorber layer,and retrospect the progress in the CIGS solar cell with emphasis on the alkali element post deposition treatment.
文摘This scientific paper presents a study investigating the effects of defects at the CdS/CIGS and CdS/SDL interfaces on the performance of CIGS solar cells. The objective of this study is to analyze the influence of defects at the interface between the CdS buffer layer and the CIGS absorber, as well as the surface defect layer (SDL), on CIGS solar cell performance. The study explores three key aspects: the impact of the conduction band offset (CBO) at the CdS/CIGS interface, the effects of interface defects and defect density on performance, and the combined influence of CBO and defect density at the CdS/ SDL and SDL/CIGS interfaces. For interface defects not exceeding 10<sup>13</sup> cm<sup>-2</sup>, we obtained a good efficiency of 22.9% when -0.1 eV analyzing the quality of CdS/SDL and SDL/CIGS junctions, it appears that defects at the SDL/CIGS interface have very little impact on the performances of the CIGS solar cell. By optimizing the electrical parameters of the CdS/SDL interface defects, we achieved a conversion efficiency of 23.1% when -0.05 eV < CBO < 0.05 eV.
