200Ms/s 177mW 8bit Folding and Interpolating CMOS A/D Converter

A CMOS folding and interpolating analog-to-digital converter (ADC) for embedded application is described.The circuit is fully compatible with standard digital CMOS technology.A modified folding block implemented without resistor contributes to a small chip area.At the input stage,offset averaging reduces the input capacitance and the distributed track-and-hold circuits are proposed to improve signal-to-noise-plus-distortion ratio.The 200Ms/s 8bit ADC with 177mW total power consumption at 3.3V power supply is realized in standard digital 0.18μm 3.3V CMOS technology.

Accurate metamodels of device parameters and their applications in performance modeling and optimization of analog integrated circuits

Techniques for constructing metamodels of device parameters at BSIM3v3 level accuracy are presented to improve knowledge-based circuit sizing optimization. Based on the analysis of the prediction error of analytical performance expressions, operating point driven （OPD） metamodels of MOSFETs are introduced to capture the circuit＇s characteristics precisely. In the algorithm of metamodel construction, radial basis functions are adopted to interpolate the scattered multivariate data obtained from a well tailored data sampling scheme designed for MOSFETs. The OPD metamodels can be used to automatically bias the circuit at a specific DC operating point. Analytical-based performance expressions composed by the OPD metamodels show obvious improvement for most small-signal performances compared with simulation-based models. Both operating-point variables and transistor dimensions can be optimized in our nesting-loop optimization formulation to maximize design flexibility. The method is successfully applied to a low-voltage low-power amplifier.

An 85mW 14-bit 150MS/s Pipelined ADC with a Merged First and Second MDAC

A low-power 14-bit 150MS/s an- alog-to-digital converter （ADC） is present- ed for communication applications. Range scaling enables a maximal 2-Vp-p input with a single-stage opamp adopted. Opamp and capacitor sharing between the first multi- plying digital-to-analog converter （MDAC） and the second one reduces the total opamp power further. The dedicated sample-and- hold amplifier （SHA） is removed to lower the power and the noise. The blind calibration of linearity errors is proposed to improve the per- formance. The prototype ADC is fabricated in a 130rim CMOS process with a 1.3-V supply voltage. The SNDR of the ADC is 71.3 dB with a 2.4 MHz input and remains 68.5 dB for a 120 MHz input. It consumes 85 roW, which includes 57 mW for the ADC core, 11 mW for the low jitter clock receiver and 17 mW for the high-speed reference buffer.

A 10-bit 50-MS/s sample-and-hold circuit with low distortion sampling switches

A fully-differential switched-capacitor sample-and-hold （S/H） circuit used in a 10-bit 50-MS/s pipeline analog-to-digital converter （ADC） was designed and fabricated using a 0.35-μm CMOS process. Capacitor flip-around architecture was used in the S/H circuit to lower the power consumption. In addition, a gain-boosted operational transconductance amplifier （OTA） was designed with a DC gain of 94 dB and a unit gain bandwidth of 460 MHz at a phase margin of 63 degree, which matches the S/H circuit. A novel double-side bootstrapped switch was used, improving the precision of the whole circuit. The measured results have shown that the S/H circuit reaches a spurious free dynamic range （SFDR） of 67 dB and a signal-to-noise ratio （SNR） of 62.1 dB for a 2.5 MHz input signal with 50 MS/s sampling rate. The 0.12mm^2 S/H circuit operates from a 3.3 V supply and consumes 13.6 mW.

DC Gain Analysis of Scaled CMOS Op Amp in Sub-100 nm Technology Nodes:A Research Based on Channel Length Modulation Effect

Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field effect transistor model version 4(BSIM4) current expression for sub-100 nm MOSFET intrinsic gain is deduced,which only needs a few technology parameters.With this transistor intrinsic gain model,complementary metal-oxide-semiconductor(CMOS) operational amplifier(op amp) DC gain could be predicted.A two-stage folded cascode op amp is used as an example in this work.Non-minimum length device is used to improve the op amp DC gain.An improvement of 20 dB is proved when using doubled channel length design.Optimizing transistor bias condition and using advanced technology with thinner gate dielectric thickness and shallower source/drain junction depth can also increase the op amp DC gain.After these,a full op amp DC gain scaling roadmap is proposed,from 130 nm technology node to 32 nm technology node.Five scaled op amps are built and their DC gains in simulation roll down from 69.6 to 41.1 dB.Simulation shows transistors biased at higher source-drain voltage will have more impact on the op amp DC gain scaling over technology.The prediction based on our simplified gain model agrees with SPICE simulation results.

A 3V 5.88mW 13b 400kHz Sigma-Delta Modulator with 84dB Dynamic Range

This paper introduces a high-revolution,200kHz signal bandwidth EA modulator for low-IF GSM receivers that adopts a 2-1 cascaded single-bit structure to achieve high linearity and stability. Our design is realized in a standard 0.18μm CMOS process with art active area of 0.5mm× 1.1mm.The EA modulator is driven by a single 19.2MHz clock signal and dissipates 5.88mW from 3V power supply. The experimental results show that,with an oversampling ratio of 48, the modulator achieves a 84.4dB dynamic range,73.8dB peak SNDR, and 80dB peak SNR in the signal bandwidth of 200kHz.