This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the Chi...This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values.展开更多
A systemic solution for radiation hardened design is presented. Besides, a series of experiments have been carried out on the samples, and then the photoelectric response characteristic and spectral characteristic bef...A systemic solution for radiation hardened design is presented. Besides, a series of experiments have been carried out on the samples, and then the photoelectric response characteristic and spectral characteristic before and after the experiments have been comprehensively analyzed. The performance of the CMOS image sensor with the radiation hardened design technique realized total-dose resilience up to 300 krad（Si） and resilience to singleevent latch up for LET up to110 Me V cm^2/mg.展开更多
The logarithmic response complementary metal oxide semiconductor （CMOS） image sensor provides a wide dynamic range, but its drawback is the lack of simple fixed pattern noise（FPN） cancellation scheme. Designed is ...The logarithmic response complementary metal oxide semiconductor （CMOS） image sensor provides a wide dynamic range, but its drawback is the lack of simple fixed pattern noise（FPN） cancellation scheme. Designed is a novel logarithmic active pixel sensor（APS） with high dynamic range and high output swing. Firstly, the operation principle of mixed-model APS is introduced. The pixel can work in three operation modes by choosing the proper control signals. Then, FPN sources of logarithmic APS are analyzed, and double-sampled technique is implemented to reduce FPN. Finally, according to the simulation results, layout is designed and has passed design rule check（DRC）, electronic rule eheck（ERC） and layout versus schematic（LVS） verifications, and the post-simulation results are basically in agreement with the simulation results. Dynamic range of the new logarithmic APS can reach about 140 dB; and the output swing is about 750 inV. Results show that by using double sampled technique, most FPN is eliminated and the dynamic range is enhanced.展开更多
The charge transfer efficiency improvement method is introduced by optimizing the electrical potential distribution under the transfer gate along the charge transfer path. A non-uniform doped transfer transistor chan-...The charge transfer efficiency improvement method is introduced by optimizing the electrical potential distribution under the transfer gate along the charge transfer path. A non-uniform doped transfer transistor chan- nel is introduced to provide an ascending electrical potential gradient in the transfer transistor channel. With the adjustments to the overlap length between the R1 region and the transfer gate, the doping dose of the R1 region, and the overlap length between the anti-punch-through （APT） implantations and transfer gate, the potential barrier and potential pocket in the connecting region of transfer transistor channel and the pinned photodiode （PPD） are reduced to improve the electrical potential connection. The simulation results show that the percentage of residual charges to total charges drops from 1/10^4 to 1/10^7, and the transfer time is reduced from 500 to 110 ns. This means the charge transfer efficiency is improved.展开更多
基金supported by the Young Elite Scientists Sponsorship Program by CAST(No.YESS20210441)the National Natural Science Foundation of China(Nos.U2167208,11875223)。
文摘This study investigates the effects of displacement damage on the dark signal of a pinned photodiode CMOS image sensor(CIS)following irradiation with back-streaming white neutrons from white neutron sources at the China spallation neutron source(CSNS)and Xi'an pulsed reactor(XAPR).The mean dark signal,dark signal non-uniformity(DSNU),dark signal distribution,and hot pixels of the CIS were compared between the CSNS back-n and XAPR neutron irradiations.The nonionizing energy loss and energy distribution of primary knock-on atoms in silicon,induced by neutrons,were calculated using the open-source package Geant4.An analysis combining experimental and simulation results showed a noticeable proportionality between the increase in the mean dark signal and the displacement damage dose(DDD).Additionally,neutron energies influence DSNU,dark signal distribution,and hot pixels.High neutron energies at the same DDD level may lead to pronounced dark signal non-uniformity and elevated hot pixel values.
文摘A systemic solution for radiation hardened design is presented. Besides, a series of experiments have been carried out on the samples, and then the photoelectric response characteristic and spectral characteristic before and after the experiments have been comprehensively analyzed. The performance of the CMOS image sensor with the radiation hardened design technique realized total-dose resilience up to 300 krad（Si） and resilience to singleevent latch up for LET up to110 Me V cm^2/mg.
基金National Natural Science Foundation of China (60406003)Natural Science Foundation of Tianjin(08JCZDJC24100)
文摘The logarithmic response complementary metal oxide semiconductor （CMOS） image sensor provides a wide dynamic range, but its drawback is the lack of simple fixed pattern noise（FPN） cancellation scheme. Designed is a novel logarithmic active pixel sensor（APS） with high dynamic range and high output swing. Firstly, the operation principle of mixed-model APS is introduced. The pixel can work in three operation modes by choosing the proper control signals. Then, FPN sources of logarithmic APS are analyzed, and double-sampled technique is implemented to reduce FPN. Finally, according to the simulation results, layout is designed and has passed design rule check（DRC）, electronic rule eheck（ERC） and layout versus schematic（LVS） verifications, and the post-simulation results are basically in agreement with the simulation results. Dynamic range of the new logarithmic APS can reach about 140 dB; and the output swing is about 750 inV. Results show that by using double sampled technique, most FPN is eliminated and the dynamic range is enhanced.
基金Project supported by National Natural Science Foundation of China(Nos.61036004,61076024)
文摘The charge transfer efficiency improvement method is introduced by optimizing the electrical potential distribution under the transfer gate along the charge transfer path. A non-uniform doped transfer transistor chan- nel is introduced to provide an ascending electrical potential gradient in the transfer transistor channel. With the adjustments to the overlap length between the R1 region and the transfer gate, the doping dose of the R1 region, and the overlap length between the anti-punch-through （APT） implantations and transfer gate, the potential barrier and potential pocket in the connecting region of transfer transistor channel and the pinned photodiode （PPD） are reduced to improve the electrical potential connection. The simulation results show that the percentage of residual charges to total charges drops from 1/10^4 to 1/10^7, and the transfer time is reduced from 500 to 110 ns. This means the charge transfer efficiency is improved.
