Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have be...Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have been studied in comparison to those from theγ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obviouslyand a small bright region on the dark image appears at the dose of 0.4 kGy. The average brightnessincreases at 0.4 kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy,showing the sensor undergoes severe performance degradation. Electron radiation damage is much moresevere than γ radiation damage for the CMOS image sensors. A possible explanation is presented inthis paper.展开更多
The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1× 10^9 to 4×10^10 cm^-2 and 1 × 10^9 to 2×10^12 cm^-2 have been carried out respectively. The color ...The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1× 10^9 to 4×10^10 cm^-2 and 1 × 10^9 to 2×10^12 cm^-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4×10^l0 and 2×10^12 cm^-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.展开更多
基金This project is financially supported by the Narional Natural Science Foundation of China(Nos 10375034 and 10075029) and the Basic Research Foundation of Tsinghua University (No. JC2002058).
文摘Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have been studied in comparison to those from theγ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obviouslyand a small bright region on the dark image appears at the dose of 0.4 kGy. The average brightnessincreases at 0.4 kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy,showing the sensor undergoes severe performance degradation. Electron radiation damage is much moresevere than γ radiation damage for the CMOS image sensors. A possible explanation is presented inthis paper.
基金National Natural Science Foundation of China(10375034,10075029)
文摘The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1× 10^9 to 4×10^10 cm^-2 and 1 × 10^9 to 2×10^12 cm^-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4×10^l0 and 2×10^12 cm^-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.
文摘视觉位置姿态测量系统是在轨服务系统的重要组成部分。为了准确测量目标航天器部件的位置和姿态,针对CMOS(Complementary Metal-Oxide-Semiconductor)图像传感器在空间带电粒子辐照下光电敏感参数衰降,造成视觉系统性能退化的问题,利用CMOS传感器辐射损伤对视觉系统性能影响的理论与实验相结合的研究方法,结果显示:对CMOS传感器进行3.0 Me V质子辐照后,随着辐照注量增加,位置解算标准差迅速增大,当质子辐照注量为7.36×1010 p/cm2时,标准差为辐照前的4.41~17.86倍。姿态解算标准差随辐照注量增加而降低,姿态解算标准差在质子辐照注量为7.36×1010p/cm2时为辐照前的2.76~5.85倍。姿态解算精度要优于位置解算精度,这说明质子辐照对视觉系统位置解算精度的影响更大。该结果为掌握视觉系统的空间辐射效应奠定了基础。
基金Supported by National Natural Science Foundation of China (11805269)Tianshan Youth Project of Autonomous Region under Grant(2019Q085)Key Deployment Projects of Chinese Academy of Sciences(ZDRW-CN-2020-2)。
