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Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors
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作者 丁李利 Simone Gerardin +3 位作者 Marta Bagatin Dario Bisello Serena Mattiazzo Alessandro Paccagnella 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第9期468-473,共6页
The total ionizing dose(TID) response of 65-nm CMOS transistors is studied by 10-ke V x-ray and 3-Me V protons up to 1 Grad(SiO_2) total dose.The degradation levels induced by the two radiation sources are differe... The total ionizing dose(TID) response of 65-nm CMOS transistors is studied by 10-ke V x-ray and 3-Me V protons up to 1 Grad(SiO_2) total dose.The degradation levels induced by the two radiation sources are different to some extent.The main reason is the interface dose enhancement due to the thin gate oxide and the low energy photons.The holes' recombination also contributes to the difference.Compared to these two mechanisms,the influence of the dose rate is negligible. 展开更多
关键词 total ionizing dose(TID) effects grad dose x-ray and protons 65-nm cmos transistors
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A novel wide-dynamic-range logarithmic-response bipolar junction photogate transistor for CMOS imagers
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作者 金湘亮 陈杰 仇玉林 《Chinese Optics Letters》 SCIE EI CAS CSCD 2003年第8期468-471,共4页
In this paper, a new photodetector, bipolar junction photogate transistor (BJPG), is proposed for CMOS imagers. Due to an injection p+n junction introduced, the photo-charges drift through the p+n junction by the appl... In this paper, a new photodetector, bipolar junction photogate transistor (BJPG), is proposed for CMOS imagers. Due to an injection p+n junction introduced, the photo-charges drift through the p+n junction by the applied electronic field, and on the other hand, the p+n junction injects the carriers into the channel to carry the photo-charges. Therefore this device can increase the readout rate of the pixel signal charges and the photoelectron transferring efficiency. Using this new device, a new type of logarithmic pixel circuit is obtained with a wide dynamic range which makes photo-detector more suitable for imaging the naturally illuminated scenes. The simulations show that the photo current density of BJPG increases logarithmically with the incident light power due to the introduced injection p+n junction. The noise characteristics of BJPG are analyzed in detail and a new gate-induced noise is proposed. Based on the established numerical analytical model of noise, the power spectrum density curves are simulated. 展开更多
关键词 cmos be on of A novel wide-dynamic-range logarithmic-response bipolar junction photogate transistor for cmos imagers into that for
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Wide Symmetrical Dynamic Range PWM Neuron Circuit with Power Efficient Architecture
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作者 陈继伟 石秉学 《Tsinghua Science and Technology》 SCIE EI CAS 2002年第5期513-516,共4页
A novel pulse stream neuron circuit is presented whose output pulse width facilitates sigmoid activation to activate the function of neurons. The wide symmetrical dynamic range of this neuron ensures high noise immuni... A novel pulse stream neuron circuit is presented whose output pulse width facilitates sigmoid activation to activate the function of neurons. The wide symmetrical dynamic range of this neuron ensures high noise immunity. The pulsed activation strategy provides a power efficient architecture, so the circuit has very low power dissipation. The simplicity of the circuit ensures its suitability for large-scale integration. 展开更多
关键词 neuron network pulsed activation pulse width modulation (PWM) low power design very large scale integration (VLSI) complementary metal-oxide-semiconductor (cmos) transistor
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