This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the t...This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the reduction of carrier mobilities and threshold voltages of MOS transistors and the increase of leakage currents of MOS transistors drain terminal pn junctions. The calculation results can explain the experimental phenomenon.展开更多
In this research, a fast methodology to calculate the exact value of the average dynamic power consumption for CMOS combinational logic circuits is developed. The delay model used is the unit-delay model where all gat...In this research, a fast methodology to calculate the exact value of the average dynamic power consumption for CMOS combinational logic circuits is developed. The delay model used is the unit-delay model where all gates have the same propagation delay. The main advantages of this method over other techniques are its accuracy, as it is deterministic and it requires less computational effort compared to exhaustive simulation approaches. The methodology uses the Logic Pictures concept for obtaining the nodes’ toggle rates. The proposed method is applied to well-known circuits and the results are compared to exhaustive simulation and Monte Carlosimulation methods.展开更多
基金Supported by the National Native Science Foundation of China
文摘This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the reduction of carrier mobilities and threshold voltages of MOS transistors and the increase of leakage currents of MOS transistors drain terminal pn junctions. The calculation results can explain the experimental phenomenon.
文摘In this research, a fast methodology to calculate the exact value of the average dynamic power consumption for CMOS combinational logic circuits is developed. The delay model used is the unit-delay model where all gates have the same propagation delay. The main advantages of this method over other techniques are its accuracy, as it is deterministic and it requires less computational effort compared to exhaustive simulation approaches. The methodology uses the Logic Pictures concept for obtaining the nodes’ toggle rates. The proposed method is applied to well-known circuits and the results are compared to exhaustive simulation and Monte Carlosimulation methods.
