开展了入射脉冲激光能量密度对纳秒脉冲激光辐照CMOS(complementary metal oxide semiconductor)光电探测器的感光面(二氧化硅层/硅层交界面)处热应力的影响研究。建立了CMOS光电探测器的仿真几何结构模型,基于傅里叶热传导方程及热力...开展了入射脉冲激光能量密度对纳秒脉冲激光辐照CMOS(complementary metal oxide semiconductor)光电探测器的感光面(二氧化硅层/硅层交界面)处热应力的影响研究。建立了CMOS光电探测器的仿真几何结构模型,基于傅里叶热传导方程及热力耦合方程组对纳秒脉冲激光辐照下CMOS光电探测器感光面中心点温升和热应力进行了仿真计算,并对入射脉冲激光能量密度对温升时间演化过程以及热应力的空间分布进行了探讨。仿真计算结果表明,随着入射脉冲激光能量密度增大,CMOS光电探测器的感光面处峰值温度增加以及热应力增大。在纳秒脉冲激光辐照CMOS光电探测器时,感光面处存在的拉应力使CMOS光电探测器先发生力学损伤,随着激光能量密度增大,再发生热学损伤。研究结果对于纳秒脉冲激光诱导CMOS光电探测器损伤机制以及损伤效果的研究具有一定的理论支持。展开更多
Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID eff...Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID effects in complementary metaloxide semiconductor(CMOS)digital ICs based on the input/output buffer information specification(IBIS)was proposed.The digital IC was first divided into three parts based on its internal structure:the input buffer,output buffer,and functional area.Each of these three parts was separately modeled.Using the IBIS model,the transistor V-I characteristic curves of the buffers were processed,and the physical parameters were extracted and modeled using VHDL-AMS.In the functional area,logic functions were modeled in VHDL according to the data sheet.A golden digital IC model was developed by combining the input buffer,output buffer,and functional area models.Furthermore,the golden ratio was reconstructed based on TID experimental data,enabling the assessment of TID effects on the threshold voltage,carrier mobility,and time series of the digital IC.TID experiments were conducted using a CMOS non-inverting multiplexer,NC7SZ157,and the results were compared with the simulation results,which showed that the relative errors were less than 2%at each dose point.This confirms the practicality and accuracy of the proposed modeling method.The TID effect model for digital ICs developed using this modeling technique includes both the logical function of the IC and changes in electrical properties and functional degradation impacted by TID,which has potential applications in the design of radiation-hardening tolerance in digital ICs.展开更多
文摘开展了入射脉冲激光能量密度对纳秒脉冲激光辐照CMOS(complementary metal oxide semiconductor)光电探测器的感光面(二氧化硅层/硅层交界面)处热应力的影响研究。建立了CMOS光电探测器的仿真几何结构模型,基于傅里叶热传导方程及热力耦合方程组对纳秒脉冲激光辐照下CMOS光电探测器感光面中心点温升和热应力进行了仿真计算,并对入射脉冲激光能量密度对温升时间演化过程以及热应力的空间分布进行了探讨。仿真计算结果表明,随着入射脉冲激光能量密度增大,CMOS光电探测器的感光面处峰值温度增加以及热应力增大。在纳秒脉冲激光辐照CMOS光电探测器时,感光面处存在的拉应力使CMOS光电探测器先发生力学损伤,随着激光能量密度增大,再发生热学损伤。研究结果对于纳秒脉冲激光诱导CMOS光电探测器损伤机制以及损伤效果的研究具有一定的理论支持。
基金This work was supported by the special fund of the State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(No.SKLIPR2011).
文摘Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID effects in complementary metaloxide semiconductor(CMOS)digital ICs based on the input/output buffer information specification(IBIS)was proposed.The digital IC was first divided into three parts based on its internal structure:the input buffer,output buffer,and functional area.Each of these three parts was separately modeled.Using the IBIS model,the transistor V-I characteristic curves of the buffers were processed,and the physical parameters were extracted and modeled using VHDL-AMS.In the functional area,logic functions were modeled in VHDL according to the data sheet.A golden digital IC model was developed by combining the input buffer,output buffer,and functional area models.Furthermore,the golden ratio was reconstructed based on TID experimental data,enabling the assessment of TID effects on the threshold voltage,carrier mobility,and time series of the digital IC.TID experiments were conducted using a CMOS non-inverting multiplexer,NC7SZ157,and the results were compared with the simulation results,which showed that the relative errors were less than 2%at each dose point.This confirms the practicality and accuracy of the proposed modeling method.The TID effect model for digital ICs developed using this modeling technique includes both the logical function of the IC and changes in electrical properties and functional degradation impacted by TID,which has potential applications in the design of radiation-hardening tolerance in digital ICs.
