TWO STEPS CHEMICAL-MECHANICAL POLISHING OF RIGID DISK SUBSTRATE TO GET ATOM-SCALE PLANARIZATION SURFACE

In order to get atomic smooth rigid disk substrate surface, ultra-fined alumina slurry and nanometer silica slurry are prepared, and two steps chemical-mechanical polishing （CMP） of rigid disk substrate in the two slurries are studied. The results show that, during the first step CMP in the alumina slurry, a high material removal rate is reached, and the average roughness （Ra） and the average waviness （Wa） of the polished surfaces can be decreased from previous 1.4 nm and 1.6 nm to about 0.6 nm and 0.7 nm, respectively. By using the nanometer silica slurry and optimized polishing process parameters in the second step CMP, the Ra and the Wa of the polished surfaces can be further reduced to 0.038 nm and 0.06 am, respectively. Atom force microscopy （AFM） analysis shows that the final polished surfaces are ultra-smooth without micro-defects.

The stability of a novel weakly alkaline slurry of copper interconnection CMP for GLSI

Chemical mechanical polishing（CMP） is one of the important machining procedures of multilayered copper interconnection for GLSI, meanwhile polishing slurry is a critical factor for realizing the high polishing performance such as high planarization efficiency, low surface roughness. The effect of slurry components such as abrasive（colloidal silica）, complexing agent（glycine）, inhibitor（BTA） and oxidizing agent（H_2O_2） on the stability of the novel weakly alkaline slurry of copper interconnection CMP for GLSI was investigated in this paper. First, the synergistic and competitive relationship of them in a peroxide-based weakly alkaline slurry during the copper CMP process was studied and the stability mechanism was put forward. Then 1 wt% colloidal silica, 2.5 wt% glycine,200 ppm BTA, 20 m L/L H_2O_2 had been selected as the appropriate concentration to prepare copper slurry, and using such slurry the copper blanket wafer was polished. From the variations of copper removal rate, root-mean square roughness（Sq） value with the setting time, it indicates that the working-life of the novel weakly alkaline slurry can reach more than 7 days, which satisfies the requirement of microelectronics further development.