We report the crystallization and photoluminescence （PL） properties of amorphous Si：H/SiNx ：H multilayer （ML） films treated by step-by-step laser annealing. The results of Raman measurements show that the nanocr...We report the crystallization and photoluminescence （PL） properties of amorphous Si：H/SiNx ：H multilayer （ML） films treated by step-by-step laser annealing. The results of Raman measurements show that the nanocrystalline Si （nc-Si） grains are formed in the a-Si：H layers under the constrained growth mechanism. The blue shift of PL peak with grain size is observed and can be attributed to the quantum confinement effect, For comparison, we also report the crystallization and PL of a-Si：H/SiNx：H ML samples by normal one-step treatment, This method of step-by-step laser treatment will be a candidate to make nc-Si quantum dots in amorphous Si：H/SiNx：H ML as an active layer in microcavities.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 90301009, 60571008, 60471021, and 10374049, the National Key Basic Research and Development Programme of China under Grant No 2001CB610503, and the Natural Science Foundation of Jiangsu Province （DK 20042111）.
文摘We report the crystallization and photoluminescence （PL） properties of amorphous Si：H/SiNx ：H multilayer （ML） films treated by step-by-step laser annealing. The results of Raman measurements show that the nanocrystalline Si （nc-Si） grains are formed in the a-Si：H layers under the constrained growth mechanism. The blue shift of PL peak with grain size is observed and can be attributed to the quantum confinement effect, For comparison, we also report the crystallization and PL of a-Si：H/SiNx：H ML samples by normal one-step treatment, This method of step-by-step laser treatment will be a candidate to make nc-Si quantum dots in amorphous Si：H/SiNx：H ML as an active layer in microcavities.
