Ultra-Robust and High-Performance Rotational Triboelectric Nanogenerator by Bearing Charge Pumping

As an emerging technology to convert environmental high-entropy energy into electrical energy,triboelectric nanogenerator(TENG)has great demands for further enhancing the service lifetime and output performance in practical applications.Here,an ultra-robust and high-performance rotational triboelectric nanogenerator(R-TENG)by bearing charge pumping is proposed.The R-TENG composes of a pumping TENG(P-TENG),an output TENG(O-TENG),a voltage-multiplying circuit(VMC),and a buffer capacitor.The P-TENG is designed with freestanding mode based on a rolling ball bearing,which can also act as the rotating mechanical energy harvester.The output low charge from the P-TENG is accumulated and pumped to the non-contact O-TENG,which can simultaneously realize ultralow mechanical wear and high output performance.The matched instantaneous power of R-TENG is increased by 32 times under 300 r/min.Furthermore,the transferring charge of R-TENG can remain 95%during 15 days(6.4×10^(6)cycles)continuous operation.This work presents a realizable method to further enhance the durability of TENG,which would facilitate the practical applications of high-performance TENG in harvesting distributed ambient micro mechanical energy.

An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump

In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power consumption.An event-driven charge pump(CP)loop with the dynamic strength control(DSC),is proposed in this paper,which overcomes trade-offs inherent in conventional structures.The presented design addresses and resolves the large signal stability issue,which has been previously overlooked in the event-driven charge pump structure.This breakthrough allows for the full exploitation of the charge-pump structure's poten-tial,particularly in enhancing transient recovery.Moreover,a dynamic error amplifier is utilized to attain precise regulation of the steady-state output voltage,leading to favorable static characteristics.A prototype chip has been fabricated in 65 nm CMOS technology.The measurement results show that the proposed OCL-LDO achieves a 410 nA low quiescent current(IQ)and can recover within 30 ns under 200 mA/10 ns loading change.

Research and Design of an On-Chip High Efficiency Dual-Output Charge Pump

To meet the demands for different supply voltage levels on SOC required by digital modules like CPU core and analog modules,a novel dual-output charge pump is proposed. The charge pump can output a step-up and a step-down voltage simultaneously with a high driving capability. The multiple gain pair technique was introduced to enhance its efficiency. The proposed co-use technology for capacitors and switch arrays reduced its cost. The charge pump was designed and fabricated in a TSMC 0.35μm mixed-signal CMOS process. A group of analytical equations were derived to model its static characteristics. A state-space model was derived to describe its small-signal dynamic behavior. Analytical predictions were verified by Spectre simulation and testing. The consistency of simulated results as well as test results with analytical predictions demonstrated the high precision of the derived analytical equations and the developed models.

An Improved Charge-Averaging Charge Pump for a Fractional-N Frequency Synthesizer

An improved charge-averaging charge pump and the corresponding circuit implementation are presented. The charge-averaging charge pump proposed by Koo is analyzed and a new scheme is proposed. This new scheme decreases power by 1/3 and eliminates the practical defects in the original. Spectre Verilog behavioral simulation results show that the proposed scheme can strongly reduce the energy of spurs. Circuit implementation of this new charge pump for a frequency synthesizer with a fractional division ratio of 1/3 is then presented and multi-level simulation is performed to validate its feasibility at the circuit level. The simulation results show this new scheme outputs a flat voltage curve in a locked state and can thus effectively suppress fraction spurs.

基于Charge Pump技术的低压高频Antiringing MOS开关驱动电路

本文给出了一种基于Charge Pump适用于低压高频Antiringing MOS开关的驱动电路。该驱动电路工作电压最低可达1.8V,工作频率最高达5MHz。文章从Charge Pump及Antiringing的基本原理出发详细介绍了此驱动电路设计思想,并且给出最终设计电路。该电路基于Samsung 0.65-μm BiCMOS工艺设计,经过HSPICE仿真验证。

基于dikson charge pump的voltage doubler设计

随着集成电路工艺的发展,电源电压不断降低,使得charge pump在芯片上的地位更加重要。传统的voltage doubler基于开关的实现方法,由于MOS管阈值电压的影响,使得voltagedoubler的输出电压与2VDD电平相差甚远。在分析dikson charge pump工作原理的基础上,提出了一种新型的基于dikson charge pump的voltage doubler,通过外加电容的方法,可以实现对diksoncharge pump的输出电压进行微调,从而得到所需要的2VDD的电平。采用smic0.35μm工艺仿真后发现当VDD=5V时,传统的voltage doubler输出电平为8.54V,而dikson voltage doubler的输出电平为理想的10V。

A Novel All-pMOS AC to DC Charge Pump with High Efficiency

A novel AC to DC charge pump with high performance is presented. Due to the pMOS structure and threshold voltage canceling technology, the efficiency and the output voltage are greatly improved. Test results show that the output voltage and power efficiency are improved by 125% and 104% respectively at 13.56MHz for a 1V sinusoidal input compared to the traditional MOS diodes structure.

一种使Charge-pump的输出电压稳定的时钟电路

随着工艺的提高和电源电压的降低,需要能够在低电压下工作的电路。该文介绍了一种能在1.8V电压下工作的时钟产生器。它的频率随着电源电压的增大而减小,随着温度的升高而增大,并能抑制制程的偏差对频率产生的影响。从而使Charge-pump的输出电压稳定。

An Improved Charge Pumping Method to Study Distribution of Trapped Charges in SONOS Memory

In silicon-oxide-nitride-oxide-silicon （SONOS） memory and other charge trapping memories, the charge distribution after programming operation has great impact on the devic＇s characteristics,such as reading,programming/erasing, and reliability. The lateral distribution of injected charges can be measured precisely using the charge pumping method. To improve the precision of the actual measurement, a combination of a constant low voltage method and a constant high voltage method is introduced during the charge pumping testing of the drain side and the source side, respectively. Finally, the electron distribution after channel hot electron programming in SONOS memory is obtained,which is close to the drain side with a width of about 50nm.

Design of a CMOS Adaptive Charge Pump with Dynamic Current Matching

A novel structure for a charge pump circuit is proposed, in which the charge-pump （CP） current can adaptively regulated according to phase-locked loops （PLL） frequency synthesis demand. The current follow technology is used to make perfect current matching characteristics, and the two differential inverters are implanted to increase the speed of charge pump and decrease output spur due to theory of low voltage difference signal. Simulation results, with 1st silicon 0. 25μm 2. 5 V complementary metal-oxide-semiconductor （CMOS） mixed-signal process, show the good current matching characteristics regardless of the charge pump output voltages.

Self-Balanced Charge Pump with Fast Lock Circuit

A self-balanced charge pump （CP） with fast lock circuit to achieve nearly zero phase error is proposed and analyzed. The proposed CP is designed based on the SMIC 0.25μm 1P5M complementary metal oxide semiconductor （CMOS） process with a 2.5 V supply voltage, HSPICE simulation shows that even if the mismatch of phase/frequency detector （PFD） was beyond 10%, the charge pump could still keep nearly zero phase error, Incorporated fast lock circuit can shorten start-up time to below 300 ns.

A PLL Clock Frequency Multiplier Using Dynamic Current Matching Adaptive Charge-Pump and VCO Frequency Reuse

A 3.5 times PLL clock frequency multiplier for low voltage different signal （LVDS） driver is presented. A novel adaptive charge pump can automatically switch the loop bandwidth and a voltage-controlled oscillator （VCO） is designed with the aid of frequency ranges reuse technology. The circuit is implemented using 1st Silicon 0.25 μm mixed-signal complementary metal-oxide-semiconductor （CMOS） process. Simulation results show that the PLL clock frequency multiplier has very low phase noise and very short capture time .

Charged Higgs Boson Pair Production via Gluon-Gluon Collisions in MSSM with CP Violation

The CP-violating effects to the subprocess gg→H+H-are studied in the mSUGRA scenario at the CERN large hadron collider,by taking into account the experimental bounds of electron and neutron electric dipole moments.The CP-violating effects in this process are related to the complex phases ofμand Af in the mSUGRA scenario.In our calculation we consider smallCP phases ofμand Af and neglect the effects of neutral Higgs boson mixing.In this case the CP effects to the process mainly come from the complex couplings of Higgs-squark-squark.We find a strong dependence of charged Higgs boson pair production rate on the complex couplings in the parameter space of minimal supersymmetric standard model.

Nano watermill driven by revolving charge

A novel nanoscale watermill for the unidirectional transport of water molecules through a curved single-walled carbon nanotube（SWNT） is proposed and explored by molecular dynamics simulations. In this nanoscale system, a revolving charge is introduced to drive a water chain confined inside the SWNT, the charge and the tube together serving as a nano waterwheel and nano engine. A resonance-like phenomenon is found, and the revolving frequency of the charge plays a key role in pumping the water chain. The water flux across the SWNT increases with respect to the revolving frequency of the external charge and it reaches its maximum when the frequency is 4 THz. Correspondingly, the number of hydrogen bonds in the water chain inside the SWNT decreases dramatically as the frequency increases from 4 THz to 25 THz. The mechanism behind the resonance phenomenon has been investigated systematically. Our findings are helpful for the design of nanoscale fluidic devices and energy converters.

基于NCP1607的自驱动Boost PFC的设计

介绍了一种功率因数校正变换器控制芯片NCP1607以及芯片的工作原理,并且给出了主电路和芯片外围元件的设计方法。引入升压泵实现自驱动,详细分析了升压泵的工作原理及其设计方法。设计了一台自驱动的样机,实验结果验证了设计方法的准确性。

新能源汽车CP信号异常无法充电原理与检修

新能源汽车的交流充电系统通过CC和CP两路信号线引导。CC信号为充电连接信号,识别车辆是否插入充电枪。CP信号为控制牵引信号,CP信号异常将导致交流充电无法进行。文章分析国标充电连接电路,阐述充电连接的工作原理,CP信号工作异常引起的车辆无法充电的故障现象及检修方法。

一种新型自平衡CPPLL电路结构及其应用

针对传统电荷泵电路中存在的电荷注入、电荷分享、时钟馈通等现象,对传统鉴频鉴相器和电荷泵进行了改进,提出了一种新型自平衡的CPPLL电路结构,并用于三角波振荡电路的设计.电路设计基于TSMC5V0.6μmBCD工艺,Spectre仿真结果显示,该电路能消弱电流失配、电荷注入、电荷分享等非理想特性,而且能产生稳定对称、频率宽范围(可达数GHz)可调的三角波输出信号,功耗1.4mW.

CPLD器件中电荷泵的分析与设计

以CPLD电路中的Dickson电荷泵作为研究和分析的对象,利用CADENCE中的Spectre仿真软件进行电路的仿真验证,分析了电荷泵中输出级负载电容与其电压上升时间的关系,电荷泵产生电压与电荷泵级数、电源电压的关系,三种电荷泵产生电压的区别,及电阻负载对电荷泵上升电压的限制,所得结果对CPLD电路电荷泵设计具有指导意义。

Refrigerant Control Strategies for Residential Air-Conditioning and Heat-Pump System

This paper simulated the optimal refrigerant charge inventory of a refrigeration system in air-conditioning operation and heat-pump operation respectively,and studied the refrigerant control strategies in this system.The void fraction in two-phase fluid region was calculated by Harms model.And based on distributed parameter model and Harms model,the refrigerant charge inventory in condenser and evaporator were calculated and analyzed in air-conditioning conditions and heat-pump conditions,respectively.The calculating results of different refrigerant mass between refrigeration and heating conditions indicate that the optimal refrigerant charge inventory in heat-pump conditions is lower than that in air-conditioning conditions.To avoid the decrease of COP due to the surplus refrigerant in heating conditions,we introduced the liquid reservoir control method and associate capillary control method.Both of them could increase the heating capacity of the air-source heat pump.The difference of optimal refrigerant charge inventory in air-conditioning and heat-pump system can be controlled by the liquid reservoir or the associate capillary.

MINItrace医用回旋加速器水冷系统CP泵故障分析与排除

介绍了MINItrace医用回旋加速器的原理及构成,详细分析了该设备水冷系统CP泵(冷却泵)出现的CCAB CB(控制柜断路器)故障和绕组电阻不平衡故障,提出了具体的排除方法,确保了机器的正常运行,为其他维修人员维修类似故障提供了参考。最后指出了回旋加速器结构复杂,维修人员只有熟悉其基本原理及电路图才能快速排除故障,提高工作效率,更好地为临床服务。