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低温度系数低功耗带隙基准的设计 被引量:2
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作者 吴庆 李富华 +1 位作者 黄君山 侯汇宇 《电子与封装》 2019年第6期25-28,共4页
对带隙基准电压源的温度系数和功耗进行了分析研究,采用与绝对温度成正比(PTAT)的电流和与绝对温度互补(CTAT)的电流加权和技术,同时采用放大器工作在亚阈值区技术及运放失调补偿技术,基于0.4μm的CMOS工艺设计了一个低温度系数、低功... 对带隙基准电压源的温度系数和功耗进行了分析研究,采用与绝对温度成正比(PTAT)的电流和与绝对温度互补(CTAT)的电流加权和技术,同时采用放大器工作在亚阈值区技术及运放失调补偿技术,基于0.4μm的CMOS工艺设计了一个低温度系数、低功耗的基准电压电路。通过电源电压、工作温度及工艺角对基准电压影响的仿真,结果表明该带隙基准源典型的温度系数为2×10^-6/℃,功耗为5.472μW,基准电压为1.32V,电源抑制比为83.5dB,实现了低温度系数、低功耗特性,且电路工作稳定。 展开更多
关键词 带隙基准电压 PTAT电流 ctat电流 温度系数
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A CMOS Voltage Reference Based on V_(GS) and ΔV_(GS) in the Weak Inversion Region
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作者 夏晓娟 谢亮 孙伟锋 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第8期1523-1528,共6页
A CMOS voltage reference, which is based on VGs and/x ΔGS in the weak inversion region, has been designed and implemented in standard 0.6μm CMOS technology. No diodes and parasitic bipolar junction transistors (BJT... A CMOS voltage reference, which is based on VGs and/x ΔGS in the weak inversion region, has been designed and implemented in standard 0.6μm CMOS technology. No diodes and parasitic bipolar junction transistors (BJTs) are used. The proposed voltage reference uses a current-mode topology by summing a PTAT current and a CTAT current into a re- sistor to generate the required reference voltage. It can also provide more than one reference voltage output, which is quite suitable for systems requiring many different reference voltages simultaneously. The occupied chip area is 0. 023mm^-2 . The operation supply voltage is from 2.5 to 6V, and the maximum supply current is 8.25μA. The designed three different out- puts are respectively about 203mV, 1.0V, and 2.05V at room temperature when the supply voltage is 4V. The circuit achieves a temperature coefficient of 31ppm/℃ in the temperature range of 0 to 100℃ and an average line regulation of ± 0. 203%/V. The voltage reference has been successfully applied in a white LED backlight driver chip. 展开更多
关键词 CMOS voltage reference ctat current PTAT current temperature coefficient weak inversion region
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