For the first time the effect of light on the CVC of strained p-n-junction in a strong microwave field is examined. It is shown that the deformation and the microwave field increase the current through p-n-junction, a...For the first time the effect of light on the CVC of strained p-n-junction in a strong microwave field is examined. It is shown that the deformation and the microwave field increase the current through p-n-junction, and the light decreases it. The mechanism of this phenomenon is explained by the fact that under heating of the charge carriers by microwave field the recombination current arises, and under the action of light the generation current arises which are directed oppositely. And under the influence of the deformation the band gap of the semiconductor will be changed.展开更多
The paper deals with the heating of electrons and current rectification in contact, which is located in an alternating electromagnetic field. It was found that the electrical component of the microwave (UHF) waves ins...The paper deals with the heating of electrons and current rectification in contact, which is located in an alternating electromagnetic field. It was found that the electrical component of the microwave (UHF) waves inside the p-n-junction was curved. This leads to the perpendicular component of the electric field of the microwave wave. This component modulates the height of the potential barrier with the frequency of the microwave. In the p-n-junction, straightening microwave current occurs. It is shown that the rectifying contact in the microwave electromagnetic field is always an electromotive force. This is due to carrier heating and straightening microwave current. It is shown that electron heating and straightening of the microwave power will lead to higher ideality factor of the diode.展开更多
文摘For the first time the effect of light on the CVC of strained p-n-junction in a strong microwave field is examined. It is shown that the deformation and the microwave field increase the current through p-n-junction, and the light decreases it. The mechanism of this phenomenon is explained by the fact that under heating of the charge carriers by microwave field the recombination current arises, and under the action of light the generation current arises which are directed oppositely. And under the influence of the deformation the band gap of the semiconductor will be changed.
文摘The paper deals with the heating of electrons and current rectification in contact, which is located in an alternating electromagnetic field. It was found that the electrical component of the microwave (UHF) waves inside the p-n-junction was curved. This leads to the perpendicular component of the electric field of the microwave wave. This component modulates the height of the potential barrier with the frequency of the microwave. In the p-n-junction, straightening microwave current occurs. It is shown that the rectifying contact in the microwave electromagnetic field is always an electromotive force. This is due to carrier heating and straightening microwave current. It is shown that electron heating and straightening of the microwave power will lead to higher ideality factor of the diode.
