Studies on Thermal Conductivity of Diamond Film

Diamond films were prepared by electron-assisted chemical vapor deposition (EACVD) system, and the thermal diffusivities of the films with or without substrate were studied by use of photothermal deflection (PTD) technique. The results show that less non-diamond component and larger crystalline size result in higher thermal conductivity of CVD diamond film. The influence of substrate on the measurement of thermal conductivity of the film was investigated, and a simple two-layer heat conduction model is given to account for the influence and used to draw the thermal conductivity of the film from the effective thermal diffusivity of film/substrate system.

Effects of deposition parameters on microstructure and thermal conductivity of diamond films deposited by DC arc plasma jet chemical vapor deposition

The uniform diamond films with 60 mm in diameter were deposited by improved DC arc plasma jet chemical vapor deposition technique. The structure of the film was characterized by scanning electronic microcopy(SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal deflection technique. The effects of main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W/(K·cm), can be obtained at a CH4 concentration of 1.5% (volume fraction) and the substrate temperatures of 880-920 ℃ due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.

A MONTE CARLO SIMULATION OF THE CVD DIAMOND FILM

A Monte Carlo algorithm has been developed by the authors to simulate the chemical vapor deposition (CVD) processes of diamond films. The method considers both the diffusion and the incorporation of the growth radicals on the growing surface in simulating the evolution of the morphology and microstructure. The calculation of configuration energy is used to determine the orientation of adsorbed growth radicals. The effect of processing variables such as nucleation density and substrate temperature on the morphology and microstructure is discussed. It is found that competitive characteristic and coarsening effect exist in the simulation results, which agree with the experimental observations.

Effect of deformation of diamond anvil and sample in diamond anvil cell on the thermal conductivity measurement

Studies show that the sample thickness is an important parameter in investigating the thermal transport properties of materials under high-temperature and high-pressure(HTHP)in the diamond anvil cell(DAC)device.However,it is an enormous challenge to measure the sample thickness accurately in the DAC under severe working conditions.In conventional methods,the influence of diamond anvil deformation on the measuring accuracy is ignored.For a hightemperature anvil,the mechanical state of the diamond anvil becomes complex and is different from that under the static condition.At high temperature,the deformation of anvil and sample would be aggravated.In the present study,the finite volume method is applied to simulate the heat transfer mechanism of stable heating DAC through coupling three radiativeconductive heat transfer mechanisms in a high-pressure environment.When the temperature field of the main components is known in DAC,the thermal stress field can be analyzed numerically by the finite element method.The obtained results show that the deformation of anvil will lead to the obvious radial gradient distribution of the sample thickness.If the top and bottom surfaces of the sample are approximated to be flat,it will be fatal to the study of the heat transport properties of the material.Therefore,we study the temperature distribution and thermal conductivity of the sample in the DAC by thermal-solid coupling method under high pressure and stable heating condition.

Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part I Simulation of CVD diamond film growth under Joe-Badgwell-Hauge model

The growth of (100} oriented CVD (Chemical Vapor Deposition) diamond film under Joe-Badgwell-Hauge (J-B-H) model is simulated at atomic scale by using revised KMC (Kinetic Monte Carlo) method. The results show that: (1) under Joe's model, the growth mechanism from single carbon species is suitable for the growth of (100) oriented CVD diamond film in low temperature; (2) the deposition rate and surface roughness (Rq) under Joe's model are influenced intensively by temperature (Ta) and not evident bymass fraction W of atom chlorine; (3)the surface roughness increases with the deposition rate, i.e. the film quality becomes worse with elevated temperature, in agreement with Grujicic's prediction; (4) the simulation results cannot make sure the role of single carbon insertion.

Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature-Part Ⅱ Simulation of CVD diamond film growth in C-H system and in Cl-containing systems

The growth of {100}-oriented CVD diamond film under two modifications ofJ-B-H model at low substrate temperatures was simulated by using a revised KMC method at atomicscale. The results were compared both in Cl-containing systems and in C-H system as follows: (1)Substrate temperature can produce an important effect both on film deposition rate and on surfaceroughness; (2) Aomic Cl takes an active role for the growth of diamond film at low temperatures; (3){100}-oriented diamond film cannot deposit under single carbon insertion mechanism, which disagreeswith the predictions before; (4) The explanation of the exact role of atomic Cl is not provided inthe simulation results.

The Characteristics of Thermal Conductivity for Diamond Film

Diamond can be applied in high technology and future industry areas due to its high hardness, high thermal conductivity, ultrawide band optical transmission range and excellent semiconducting characteristics. Specially, the high thermal conductivity of diamond is its most attractive property, since it can be used as a heat sink in high-power semiconductor devices and medium-wave oscillators. However, the

An Improved Thermal Conductivity Measurement Scheme for Macroscopic Graphitic Films Using the Laser Flash Method

Achieving efficient thermal management urges to exploit high-thermal-conductivity materials to satisfy the boosted demand of heat dissipation.It is critical to adopt standardized characterization protocols to evaluate the intrinsic thermal conductivity of thermal management materials.However,for the most representative laser flash method,the lack of standard measurement methodology and systematic description on the thermal diffusivity and influencing factors has led to significant deviations and confusion of the thermal conduction performance in the emerging thermal management application.Here,the measurement error factors of thermal diffusivity by the common laser flash analyzer(LFA)are discussed.Taking high-thermal-conductivity graphitic film(GF)as a typical case,the key factors are analyzed to guide the measurement protocol of related carbon-based thermal management materials.The basic principle of the LFA measurement,actual pre-processing conditions,instrument parameters setting,and data analysis are elaborated for accurate measurements.Furthermore,the graphene thick films and common isotropic materials are also extended to meet various thermal measurement requirements.Based on the existing practical problems,we propose a feasible test flow to achieve a unified and standardized thermal conductivity measurement,which is beneficial to the rapid development of carbon-based thermal management materials.

Study on the Properties of Diamond Films on Aluminum Nitride Ceramics

Diamond films were successfully synthesized on aluminum nitride(AlN) ceramic substrates by hot filament chemical vapor deposition(HFCVD) method. It is notices that the thermal conductivity of the diamond film/aluminum nitride ceramic(DF/AlN) composite has reached 2.04 W/cm·K, 73%greater than that of AlN ceramic. Compared with the measurement of scanning electron microscopy(SEM) and Raman spectroscopy, the influence of diamond films on the thermal conductivity of the composites was pointed out. The adhesion and the stresses of diamond films were also studied. The unusual stability and very good adhesion of diamond films on AlN ceramic substrates obtained are attributed to the formation of aluminum carbide.

SELECTIVE DEPOSITION OF DIAMOND FILMS BY THERMAL CVD OF TUNGSTEN FILAMENT

Ⅰ. INTRODUCTIONThe preparation and application studies of diamond thin films as a new type of multifunction materials have made a great progress in recent years. Up to now, the initial applications of diamond thin films prepared by various methods based on chemical vapor deposi-

Thermal Stress in Free-standing Diamond Films with Cr Interlayer Destroyed

Thermal stress in large area free-standing diamond films was remarkable during the post-deposition cooling of direct current （DC） arc plasma jet chemical vapor deposition （CVD） process.In this research,the stress release caused by delamination of Cr interlayer was of great importance to ensure the integrity of free-standing diamond film.The effects of Cr interlayer on Mo substrate,namely composite substrate,on thermal stress were investigated.Thermo-mechanical coupling analysis of the thermal stress was applied by finite element analysis （FEA） using ANSYS code.It was found that the interlayer could be destroyed first by the large thermal stress,and then the stress could be released and the probability of diamond film crack initiation would be reduced.The stress concentration at the bent edge of diamond film was also discussed.In addition,diamond films deposited on Mo substrates with and without Cr interlayer were prepared by DC arc plasma jet CVD system and experimental measurements were used to characterize these films.It was found that composite substrate could be an effective method of growing free-standing crack-free diamond films by DC arc plasma jet CVD system when there is no special requirement to the film strength.

Thermal conductivity measurement of InGaAs/InGaAsP superlattice thin films

The thermal conductivities of InGaAs/ InGaAsP superlattices with different period lengths were measured from 100 to 320 K using 3ω method. In this temperature range, the thermal conductivities were found to decrease with an increase in temperature. For the period length-dependant thermal conductivity, the minimum value does exist at a certain period length, which demonstrates that at a short period length, superlattice thermal conductivity increases with a decrease in the period length. When the period is longer than a certain period length, the interface thermal resistance dominates in phonon transport. The experimental and theoretical results confirmed the previous predictions from the lattice dynamics analysis, i.e. with the increase in period length, the dominant mechanisms of phonon transport in superlattices will shift from wave mode to particle mode. This is crucial for the cutoff of the phonons and lays a sound foundation for the design of superlattice structures.

用压痕试验法研究CVD金刚石膜的粘附性能

在观察与分析压入过程中CVD金刚石膜开裂方式的基础上，初步探讨了用压痕试验法评定CVD金刚石膜粘附性能的可行性．采用反映膜／基粘附性能的临界开裂或剥落载荷Per和抗裂性参数dP／dX两指标评定了硬质合金基体表面经不同预处理方法和沉积工艺参数合成的金刚石膜的粘附性能；研究了粘附性能指标与沉积工艺参数（如甲烷浓度、沉积气压、沉积功率）之间的关系．适当的表面预处理、适中的甲烷浓度、较低的沉积气压、较高的沉积功率均有利于改善金刚石膜的粘附性能．

CVD金刚石膜{100}取向在改进化学反应模型下生长的原子尺度模拟

建立了CVD金刚石膜狖100狚取向生长过程中的化学反应模型,表面吸附生长机制以沟槽处碳氢组元加入的机制为主,并用改进的KMC方法在原子尺度上模拟了该模型下(100)表面的生长过程,给出了衬底温度和甲基浓度等操作参数对膜质量的影响。结果表明,该化学反应模型能够较实际地揭示狖100狚取向CVD金刚石膜的生长。

CVD金刚石膜散热性能的实验及仿真分析

本文基于化学气相沉积(CVD)金刚石膜的超高热导率,设计并搭建了一套实验系统,分析其对于小空间高热流密度电子元件的散热效果。通过测量加热器及材料表面的温度值可知,相同工况下,金刚石膜温度梯度小,温度分布均匀性好,表面最大温差仅为铜的一半且加热面温度相比于铜更低。实验结果说明CVD金刚石膜的散热性能明显优于传统散热材料铜。实验验证了经过Ti-Ni-Au金属化处理的CVD金刚石薄膜具有可焊性。在实验基础上,利用Flotherm软件对系统进行仿真建模,进一步探讨了材料厚度、热导率及接触热阻对加热面温度和最大热流密度的影响。

HFCVD系统中衬底接触热阻的研究

建立了热丝CVD大面积金刚石膜沉积的衬底温度场模型,对影响衬底温度场的接触热阻及其他相关沉积参数进行了模拟计算。根据实验结果,对接触热阻的计算公式进行了修正。当ζ=0.75时,计算结果和实验结果基本上吻合。在仿真条件下,考虑衬底三维热传导以及热丝温度的不均匀分布使衬底温度场的均匀性明显优于纯热辐射下的温度场。这些计算结果为制备大面积高质量的金刚石薄膜提供了理论基础。

金刚石薄膜的ECR CVD及分形现象研究

用ＥＣＲＣＶＤ（电子回旋共振化学气相沉积）方法沉积出了多晶金刚石薄膜，测量了薄膜的Ｒａｍａｎ散射谱、Ｘ射线衍射谱和ＳＥＭ。生长条件是：Ｖ（ＣＨ４）／Ｖ（Ｈ２）＝４％，气体总流量是１５０ｓｃｍ，反应压力是０．１Ｐａ，微波功率是７００Ｗ，衬底偏压是－１５０Ｖ。发现了在金刚石薄膜沉积初期阶段的分形生长现象，用ＤＬＡ模型解释了其分形生长机制，用ＭｏｎｔｅＣａｒｌｏ方法对其生长过程进行了计算机模拟，理论与实验结果相符。

CVD金刚石薄膜晶粒尺寸对热导率的影响

用直流等离子喷射法 ,以甲烷、氢和氩气的混合气体为原料 ,在钼基体上合成了较高质量的CVD金刚石薄膜。对该薄膜的生长面及其背面的晶粒尺寸进行了研究 ,指出其一般规律 ,进一步探讨了CVD金刚石薄膜的晶粒尺寸对其热导率的影响规律。

CVD金刚石薄膜热导率的研究

研究了直流等离子体喷射沉积金刚石膜的晶粒尺寸、晶粒取向、膜厚、杂质和缺陷对金刚石膜的热导率的影响。结果表明 ,随着晶粒尺寸的增大 ,金刚石膜的热导率先慢后快逐渐增大 ;随着膜的增厚 ,热导率先大幅度提高 ,达到一定值后 ,变化率变小 ;晶粒 (111)取向对金刚石膜的热导率最有利 ,其次是 (110 ) ;非金刚石碳相和缺陷都降低膜的热导率 。

热丝CVD金刚石薄膜Auger电子能谱分析

利用Ａｕｇｅｒ电子能谱仪，对热丝ＣＶＤ法生长出的金刚石膜样品进行了表面探测。结果表明热丝系统中钨、钼、石英等材料对金刚石膜的污染影响很小，以至探测不到；生长系统和生长工艺对金刚石膜的质量有较大影响。