The isovalent element Ge doped into CZ-Si can effectively suppress the forming rate of oxygen donors andreduce their maximal concentration. The mechanical strength of silicon wafers can be increased by this proce-dure...The isovalent element Ge doped into CZ-Si can effectively suppress the forming rate of oxygen donors andreduce their maximal concentration. The mechanical strength of silicon wafers can be increased by this proce-dure. The mechanism of above phenomena has been discussed.展开更多
文摘The isovalent element Ge doped into CZ-Si can effectively suppress the forming rate of oxygen donors andreduce their maximal concentration. The mechanical strength of silicon wafers can be increased by this proce-dure. The mechanism of above phenomena has been discussed.
