Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 （C0.4S0.6BNT） ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Effect of annealing process （time and temperature） on structures and ferroelectric p...Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 （C0.4S0.6BNT） ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Effect of annealing process （time and temperature） on structures and ferroelectric properties of C0.4S0.6BNT thin film was investigated. The relative intensity of （200） peak increased first then decreased with annealing temperature and became predominant at 800 ℃. In contrast, no evident change could be observed in the （001） peak. The remnant polarization （Pr） and coercive field （Ec） for C0.4S0.6BNT film annealed at 800℃ for 5 min were 21.6μC/cm2 and 68.3 kV/cm, respectively.展开更多
Predominantly （100）-oriented Ca0.4Sr0.6Bi4Ti4O15 （C0.4S0.6BTi） thin films were prepared on Pt （111）/Ti/SiO2/Si substrates by a sol-gel method at annealing temperatures ranging from 650 to 850 ℃.The growth mode ...Predominantly （100）-oriented Ca0.4Sr0.6Bi4Ti4O15 （C0.4S0.6BTi） thin films were prepared on Pt （111）/Ti/SiO2/Si substrates by a sol-gel method at annealing temperatures ranging from 650 to 850 ℃.The growth mode of the predominantly （100）-oriented C0.4S0.6 BTi thin films fabricated by the sequential layer annealing was discussed based on the structure evolution with the annealing temperature.The remnant polarization and coercive field of the C0.4S0.6 BTi film annealed at 800 ℃ are 16.1 μC/cm 2 and 85 kV/cm,respectively.No evident fatigue can be observed after 10 9 switching cycles.展开更多
基金supported by the Natural Science Foundation of Shandong Province (Y2007F36)the National Natural Science Foundation of China (50872075)
文摘Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 （C0.4S0.6BNT） ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Effect of annealing process （time and temperature） on structures and ferroelectric properties of C0.4S0.6BNT thin film was investigated. The relative intensity of （200） peak increased first then decreased with annealing temperature and became predominant at 800 ℃. In contrast, no evident change could be observed in the （001） peak. The remnant polarization （Pr） and coercive field （Ec） for C0.4S0.6BNT film annealed at 800℃ for 5 min were 21.6μC/cm2 and 68.3 kV/cm, respectively.
基金supported by the National Natural Science Foundation of China (Grant No. 50872075)the Natural Science Foundation of Shandong Province,China(Grant No. Y2007F36)
文摘Predominantly （100）-oriented Ca0.4Sr0.6Bi4Ti4O15 （C0.4S0.6BTi） thin films were prepared on Pt （111）/Ti/SiO2/Si substrates by a sol-gel method at annealing temperatures ranging from 650 to 850 ℃.The growth mode of the predominantly （100）-oriented C0.4S0.6 BTi thin films fabricated by the sequential layer annealing was discussed based on the structure evolution with the annealing temperature.The remnant polarization and coercive field of the C0.4S0.6 BTi film annealed at 800 ℃ are 16.1 μC/cm 2 and 85 kV/cm,respectively.No evident fatigue can be observed after 10 9 switching cycles.
