Ca2-xSrxZn4Ti15O36∶Pr red long decay phosphor was synthesized by high temperature solid state reaction. Photoluminescence property and crystalline and unit cell parameters of the orthorhombic were investigated by flu...Ca2-xSrxZn4Ti15O36∶Pr red long decay phosphor was synthesized by high temperature solid state reaction. Photoluminescence property and crystalline and unit cell parameters of the orthorhombic were investigated by fluorescence spectrophotometer and by powder X-ray diffraction, respectively. The emission intensity at 618 nm changes sharply when the concentration of Sr2+ （x） is less than 0.1 and the emission intensity reaches the maximum when x is equal to 0.007. There is an obviously broad excitation band at 270 nm when x is equal to 0.003 and it disappears gradually when x is over 0.01. The unit cell a parameter of Ca2-xSrxZn4Ti15O36∶Pr decreases while c parameter increases with the increases of the concentration of the doped Sr2+. When x is over 0.1 the value of the unit cell parameters a and c become stable. TL peaks of Ca2Zn4Ti15O36∶Pr, Ca1.993Sr0.007Zn4Ti15O36∶0.002Pr3+, 0.002Na+, are located at 62 ℃, 88 ℃, respectively, which indicates that there are deeper traps in Ca1.993Sr0.007Zn4 Ti15O36∶0.002Pr3+, 0.002Na+.展开更多
Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 （C0.4S0.6BNT） ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Effect of annealing process （time and temperature） on structures and ferroelectric p...Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 （C0.4S0.6BNT） ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Effect of annealing process （time and temperature） on structures and ferroelectric properties of C0.4S0.6BNT thin film was investigated. The relative intensity of （200） peak increased first then decreased with annealing temperature and became predominant at 800 ℃. In contrast, no evident change could be observed in the （001） peak. The remnant polarization （Pr） and coercive field （Ec） for C0.4S0.6BNT film annealed at 800℃ for 5 min were 21.6μC/cm2 and 68.3 kV/cm, respectively.展开更多
Predominantly （100）-oriented Ca0.4Sr0.6Bi4Ti4O15 （C0.4S0.6BTi） thin films were prepared on Pt （111）/Ti/SiO2/Si substrates by a sol-gel method at annealing temperatures ranging from 650 to 850 ℃.The growth mode ...Predominantly （100）-oriented Ca0.4Sr0.6Bi4Ti4O15 （C0.4S0.6BTi） thin films were prepared on Pt （111）/Ti/SiO2/Si substrates by a sol-gel method at annealing temperatures ranging from 650 to 850 ℃.The growth mode of the predominantly （100）-oriented C0.4S0.6 BTi thin films fabricated by the sequential layer annealing was discussed based on the structure evolution with the annealing temperature.The remnant polarization and coercive field of the C0.4S0.6 BTi film annealed at 800 ℃ are 16.1 μC/cm 2 and 85 kV/cm,respectively.No evident fatigue can be observed after 10 9 switching cycles.展开更多
文摘Ca2-xSrxZn4Ti15O36∶Pr red long decay phosphor was synthesized by high temperature solid state reaction. Photoluminescence property and crystalline and unit cell parameters of the orthorhombic were investigated by fluorescence spectrophotometer and by powder X-ray diffraction, respectively. The emission intensity at 618 nm changes sharply when the concentration of Sr2+ （x） is less than 0.1 and the emission intensity reaches the maximum when x is equal to 0.007. There is an obviously broad excitation band at 270 nm when x is equal to 0.003 and it disappears gradually when x is over 0.01. The unit cell a parameter of Ca2-xSrxZn4Ti15O36∶Pr decreases while c parameter increases with the increases of the concentration of the doped Sr2+. When x is over 0.1 the value of the unit cell parameters a and c become stable. TL peaks of Ca2Zn4Ti15O36∶Pr, Ca1.993Sr0.007Zn4Ti15O36∶0.002Pr3+, 0.002Na+, are located at 62 ℃, 88 ℃, respectively, which indicates that there are deeper traps in Ca1.993Sr0.007Zn4 Ti15O36∶0.002Pr3+, 0.002Na+.
基金supported by the Natural Science Foundation of Shandong Province (Y2007F36)the National Natural Science Foundation of China (50872075)
文摘Ca0.4Sr0.6Bi3.95Nd0.05Ti4O15 （C0.4S0.6BNT） ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Effect of annealing process （time and temperature） on structures and ferroelectric properties of C0.4S0.6BNT thin film was investigated. The relative intensity of （200） peak increased first then decreased with annealing temperature and became predominant at 800 ℃. In contrast, no evident change could be observed in the （001） peak. The remnant polarization （Pr） and coercive field （Ec） for C0.4S0.6BNT film annealed at 800℃ for 5 min were 21.6μC/cm2 and 68.3 kV/cm, respectively.
基金supported by the National Natural Science Foundation of China (Grant No. 50872075)the Natural Science Foundation of Shandong Province,China(Grant No. Y2007F36)
文摘Predominantly （100）-oriented Ca0.4Sr0.6Bi4Ti4O15 （C0.4S0.6BTi） thin films were prepared on Pt （111）/Ti/SiO2/Si substrates by a sol-gel method at annealing temperatures ranging from 650 to 850 ℃.The growth mode of the predominantly （100）-oriented C0.4S0.6 BTi thin films fabricated by the sequential layer annealing was discussed based on the structure evolution with the annealing temperature.The remnant polarization and coercive field of the C0.4S0.6 BTi film annealed at 800 ℃ are 16.1 μC/cm 2 and 85 kV/cm,respectively.No evident fatigue can be observed after 10 9 switching cycles.
