Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO_(2)-based ferroelectric thin films.Here,we systematically investigate the impact of the annealing process,with tempera...Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO_(2)-based ferroelectric thin films.Here,we systematically investigate the impact of the annealing process,with temperature varied from 350℃to 550℃,on the electricity,ferroelectricity and reliability of a Hf_(0.5)Zr_(0.5)O_(2)(HZO;7.5 nm)film capacitor.It was found that HZO film annealed at a low temperature of 400℃can effectively suppress the formation of the monoclinic phase and reduce the leakage current.HZO film annealed at 400℃also exhibits better ferroelectric properties than those annealed at 350℃and 550℃.Specifically,the 400℃-annealed HZO film shows an outstanding 2Pr value of 54.6μC·cm^(-2)at±3.0 MV·cm^(-1),which is relatively high compared with previously reported values for HZO film under the same electric field and annealing temperature.When the applied electric field increases to±5.0 MV·cm^(-1),the 2Pr value can reach a maximum of 69.6μC·cm^(-2).In addition,the HZO films annealed at 400℃and 550℃can endure up to bout 2.3×10^(8)cycles under a cycling field of 2.0 MV·cm^(-1)before the occurrence of breakdown.In the 400℃-annealed HZO film,72.1%of the initial polarization is maintained while only 44.9%is maintained in the 550℃-annealed HZO film.Our work demonstrates that HZO film with a low crystallization temperature(400℃)has quite a high ferroelectric polarization,which is of significant importance in applications in ferroelectric memory and negative capacitance transistors.展开更多
As a typical hole-doped cuprate superconductor,Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)(Bi2212)carrier doping is mostly determined by its oxygen content.Traditional doping methods can regulate its doping level within the range of...As a typical hole-doped cuprate superconductor,Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)(Bi2212)carrier doping is mostly determined by its oxygen content.Traditional doping methods can regulate its doping level within the range of hole doping.Here we report the first application of CaH_(2)annealing method in regulating the doping level of Bi2212.By continuously controlling the anneal time,a series of differently doped samples can be obtained.The combined experimental results of x-ray diffraction,scanning transmission electron microscopy,resistance and Hall measurements demonstrate that the CaH_(2)induced topochemical reaction can effectively change the oxygen content of Bi2212 within a very wide range,even switching from hole doping to electron doping.We also found evidence of a low-T_c superconducting phase in the electron doping side.展开更多
To improve the cyclic stability of La-Mg-Ni system alloy, as-cast La0.75Mg0.25Ni3.5Co0.2 alloy was annealed at 1123, 1223, and 1323 K for 10 h in 0.3 MPa argon. The microstructure and electrochemical performance of di...To improve the cyclic stability of La-Mg-Ni system alloy, as-cast La0.75Mg0.25Ni3.5Co0.2 alloy was annealed at 1123, 1223, and 1323 K for 10 h in 0.3 MPa argon. The microstructure and electrochemical performance of different annealed alloys were investigated systematically by X-Ray Diffraction （XRD）, Scanning Electron Microscopy （SEM）, X-Ray Photoelectron Spectroscopy （XPS）, and electrochemical experiments. The results obtained by XRD and SEM showed that the as-cast and annealed （1123 K） alloys had multiphase structure containing LaNis, （La, Mg）2（Ni, Co）7 and few LaNi2 phases. When annealing temperatures approached 1223 and 1323 K, LaNi2 phase disappeared. The annealed alloys at 1223 and 1323 K were composed of LaNi5, （La, Mg）2（Ni, Co）7 and （La, Mg）（Ni, Co）3 phases. With increasing annealing temperature, the maximum discharge capacity of the alloy decreased monotonously, but the cyclic stability was improved owing to structure homogeneity and grain growth after annealing, as well as the enhancement of anti-oxidation/corrosion ability and the suppression of pulverization during cycling in KOH electrolyte.展开更多
Ta5+doped β-Ga2O3 single crystals were grown by using the optical floating zone method, and then annealed in the air and nitrogen gas at 1400℃ for 20 hours.The transmittance spectra, photoluminescence(PL), x-ray irr...Ta5+doped β-Ga2O3 single crystals were grown by using the optical floating zone method, and then annealed in the air and nitrogen gas at 1400℃ for 20 hours.The transmittance spectra, photoluminescence(PL), x-ray irradiation spectra, and PL decay profiles of the samples were measured at room temperature.The relevant results show that the optical transmittance of the samples annealed in the air or nitrogen gas was improved.By drawing the(ahv)2–hv graph,it can be seen that the band gap decreased after being annealed in the air, but increased in nitrogen gas.The PL spectra and x-ray irradiation spectra show that the luminescent intensity of the sample annealed in the air increased substantially,while decreased for the sample annealed in nitrogen.The PL decay time of the Ta:β-Ga2O3 annealed in the air increased significantly compared with that of the Ta:β-Ga2O3 sample without annealing, but the tendency after annealing in nitrogen gas was opposite.展开更多
TiO2 nanofibers（TiO2/NFs） have been synthesized through an electrospinning method and annealed at 400, 500 and 600 ℃ to optimize their systems. The effects of annealing temperature on the electrochemical properties...TiO2 nanofibers（TiO2/NFs） have been synthesized through an electrospinning method and annealed at 400, 500 and 600 ℃ to optimize their systems. The effects of annealing temperature on the electrochemical properties for lithium ion batteries（LIBs） are assessed. The obtained LIB properties for TiO2 nanofiber anodes annealed at 400 ℃（denoted as TiO2/NFs-400） are much better than those of TiO2/NFs-500 and TiO2/NFs-600. The TiO2/NFs-400 anodes show good LIB performance with capacities of 180 and 150 m Ah/g tested at 200 and 600 m A/g after 100 cycles with almost no capacity loss and superb rate performance. The XRD results show that the pure anatase phase TiO2 can form at 400 ℃ for TiO2/NFs-400, while mixed phases of anatase and rutile are emerged at TiO2/NFs-500 and TiO2/NFs-600. Furthermore, the TiO2 nanoparticles are combined in nanofibers, and their corresponding crystal particle size for TiO2/NFs-400 was smaller than that of the other two samples. It is concluded that the superior electrochemical performance of the TiO2/NFs-400 anodes could be due to their pure crystal of anatase, small nanoparticles and non-ideal crystal lattices.展开更多
The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this paper.The results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage curr...The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this paper.The results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage current density(Jg),and time-dependent dielectric breakdown(TDDB)characteristics of the oxide,are affected by POA temperature and are closely correlated.Specifically,Dit,Jg,and inverse median lifetime of TDDB have the same trend against POA temperature,which is instructive for SiC/SiO_(2)interface quality improvement.Moreover,area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.展开更多
To clarify the contribution of oxygen vacancies to room-temperature ferromagnetism(RTFM)in cobalt doped TiO_(2)(Co-TiO_(2)),and in order to obtain the high level of magnetization suitable for spintronic devices,in thi...To clarify the contribution of oxygen vacancies to room-temperature ferromagnetism(RTFM)in cobalt doped TiO_(2)(Co-TiO_(2)),and in order to obtain the high level of magnetization suitable for spintronic devices,in this work,Co-TiO_(2) nano-particles are prepared via the sol-gel route,followed by vacuum annealing for different durations,and the influence of vacu-um annealing duration on the structure and room-temperature magnetism of the compounds is examined.The results reveal that with an increase in annealing duration,the concentration of oxygen vacancies rises steadily,while the saturation magnetiza-tion(Ms)shows an initial gradual increase,followed by a sharp decline,and even disappearance.The maximum Ms is as high as 1.19 emu/g,which is promising with respect to the development of spintronic devices.Further analysis reveals that oxygen va-cancies,modulated by annealing duration,play a critical role in tuning room-temperature magnetism.An appropriate concentra-tion of oxygen vacancies is beneficial in terms of promoting RTFM in Co-TiO_(2).However,excessive oxygen vacancies will result in a negative impact on RTFM,due to antiferromagnetic superexchange interactions originating from nearest-neighbor Co^(2+)ions.展开更多
Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the opt...Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the optical transmission as high as 94% are easily attained by postdeposition annealing treatment. The effects of oxygen concentration in the reactive gas mixture and post-deposition annealing treatment on the optical transmittance as well as optical parameters, such as refractive index (n), extinction coefficient (k), real part (ε') and imaginary part (ε') of the dielectric constant, were studied in the visible and near-infrared region. The highfrequency dielectric constant ε∞ the plasma frequency ωP, and the conduction band effective mass mc of different samples were also investigated展开更多
基金Hainan Provincial Natural Science Foundation of China(Grant No.523QN257)Collegelevel Scientific Research Foundation of Qiongtai Normal University(Grant No.qtqn202215)+6 种基金the Innovation and Entrepreneurship Training Program for College Students(Grant No.202213811016)Science and Technology Program of Henan(Grant No.232102210182)Scientific Research Foundation of Henan Normal University(Grant No.20230196)Natural Science Foundation of Shandong Province(Grant No.ZR2023QA047)Foundation of PeiXin(Grant No.2023PX027)Science and technology smes innovation ability improvement project(Grant No.2023TSGC0154)the National Natural Science Foundation of China(Grant No.62174059)。
文摘Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO_(2)-based ferroelectric thin films.Here,we systematically investigate the impact of the annealing process,with temperature varied from 350℃to 550℃,on the electricity,ferroelectricity and reliability of a Hf_(0.5)Zr_(0.5)O_(2)(HZO;7.5 nm)film capacitor.It was found that HZO film annealed at a low temperature of 400℃can effectively suppress the formation of the monoclinic phase and reduce the leakage current.HZO film annealed at 400℃also exhibits better ferroelectric properties than those annealed at 350℃and 550℃.Specifically,the 400℃-annealed HZO film shows an outstanding 2Pr value of 54.6μC·cm^(-2)at±3.0 MV·cm^(-1),which is relatively high compared with previously reported values for HZO film under the same electric field and annealing temperature.When the applied electric field increases to±5.0 MV·cm^(-1),the 2Pr value can reach a maximum of 69.6μC·cm^(-2).In addition,the HZO films annealed at 400℃and 550℃can endure up to bout 2.3×10^(8)cycles under a cycling field of 2.0 MV·cm^(-1)before the occurrence of breakdown.In the 400℃-annealed HZO film,72.1%of the initial polarization is maintained while only 44.9%is maintained in the 550℃-annealed HZO film.Our work demonstrates that HZO film with a low crystallization temperature(400℃)has quite a high ferroelectric polarization,which is of significant importance in applications in ferroelectric memory and negative capacitance transistors.
基金supported by the National Natural Science Foundation of China(Grant Nos.11888101 and U1832202)the Chinese Academy of Sciences(Grant Nos.QYZDB-SSWSLH043 and XDB33000000)+4 种基金the K.C.Wong Education Foundation(Grant No.GJTD-2018-01)the Informatization Plan of Chinese Academy of Sciences(Grant No.CAS-WX2021SF-0102)supported by the Synergetic Extreme Condition User Facility(SECUF)supported by China Postdoctoral Science Foundation(Grant Nos.2020M680726 and YJ20200325)supported by US DOE(Grant Nos.DE-SC0010526 and DE-SC0012704)。
文摘As a typical hole-doped cuprate superconductor,Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)(Bi2212)carrier doping is mostly determined by its oxygen content.Traditional doping methods can regulate its doping level within the range of hole doping.Here we report the first application of CaH_(2)annealing method in regulating the doping level of Bi2212.By continuously controlling the anneal time,a series of differently doped samples can be obtained.The combined experimental results of x-ray diffraction,scanning transmission electron microscopy,resistance and Hall measurements demonstrate that the CaH_(2)induced topochemical reaction can effectively change the oxygen content of Bi2212 within a very wide range,even switching from hole doping to electron doping.We also found evidence of a low-T_c superconducting phase in the electron doping side.
基金Project supported by the National Natural Science Foundation of China(50642033 50701011)+1 种基金Key Technologies R&D Program of Inner Mongolia, China (20050205)Natural Science Foundation of Inner Mongolia, China (200711020703)
文摘To improve the cyclic stability of La-Mg-Ni system alloy, as-cast La0.75Mg0.25Ni3.5Co0.2 alloy was annealed at 1123, 1223, and 1323 K for 10 h in 0.3 MPa argon. The microstructure and electrochemical performance of different annealed alloys were investigated systematically by X-Ray Diffraction （XRD）, Scanning Electron Microscopy （SEM）, X-Ray Photoelectron Spectroscopy （XPS）, and electrochemical experiments. The results obtained by XRD and SEM showed that the as-cast and annealed （1123 K） alloys had multiphase structure containing LaNis, （La, Mg）2（Ni, Co）7 and few LaNi2 phases. When annealing temperatures approached 1223 and 1323 K, LaNi2 phase disappeared. The annealed alloys at 1223 and 1323 K were composed of LaNi5, （La, Mg）2（Ni, Co）7 and （La, Mg）（Ni, Co）3 phases. With increasing annealing temperature, the maximum discharge capacity of the alloy decreased monotonously, but the cyclic stability was improved owing to structure homogeneity and grain growth after annealing, as well as the enhancement of anti-oxidation/corrosion ability and the suppression of pulverization during cycling in KOH electrolyte.
基金Project supported by the National Natural Science Foundation of China(Grant No.51802327)the Science and Technology Commission of Shanghai Municipality,China(Grant No.18511110500)
文摘Ta5+doped β-Ga2O3 single crystals were grown by using the optical floating zone method, and then annealed in the air and nitrogen gas at 1400℃ for 20 hours.The transmittance spectra, photoluminescence(PL), x-ray irradiation spectra, and PL decay profiles of the samples were measured at room temperature.The relevant results show that the optical transmittance of the samples annealed in the air or nitrogen gas was improved.By drawing the(ahv)2–hv graph,it can be seen that the band gap decreased after being annealed in the air, but increased in nitrogen gas.The PL spectra and x-ray irradiation spectra show that the luminescent intensity of the sample annealed in the air increased substantially,while decreased for the sample annealed in nitrogen.The PL decay time of the Ta:β-Ga2O3 annealed in the air increased significantly compared with that of the Ta:β-Ga2O3 sample without annealing, but the tendency after annealing in nitrogen gas was opposite.
基金supported by the NSFC(21473096,21603112)the Special Project for Fujian Provincial Universities(JK2014055)+1 种基金the Research Project of Science and Technology of Ningde City(20140218,20150169)the Fund Projects of Scientific Research Innovation of Ningde Normal University(2013T03)
文摘TiO2 nanofibers（TiO2/NFs） have been synthesized through an electrospinning method and annealed at 400, 500 and 600 ℃ to optimize their systems. The effects of annealing temperature on the electrochemical properties for lithium ion batteries（LIBs） are assessed. The obtained LIB properties for TiO2 nanofiber anodes annealed at 400 ℃（denoted as TiO2/NFs-400） are much better than those of TiO2/NFs-500 and TiO2/NFs-600. The TiO2/NFs-400 anodes show good LIB performance with capacities of 180 and 150 m Ah/g tested at 200 and 600 m A/g after 100 cycles with almost no capacity loss and superb rate performance. The XRD results show that the pure anatase phase TiO2 can form at 400 ℃ for TiO2/NFs-400, while mixed phases of anatase and rutile are emerged at TiO2/NFs-500 and TiO2/NFs-600. Furthermore, the TiO2 nanoparticles are combined in nanofibers, and their corresponding crystal particle size for TiO2/NFs-400 was smaller than that of the other two samples. It is concluded that the superior electrochemical performance of the TiO2/NFs-400 anodes could be due to their pure crystal of anatase, small nanoparticles and non-ideal crystal lattices.
基金the General Program of the National Natural Science Foundation of China(Grant No.61974159)the Youth Innovation Promotion Association of the Chinese Academy of Sciences and Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20200039)。
文摘The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this paper.The results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage current density(Jg),and time-dependent dielectric breakdown(TDDB)characteristics of the oxide,are affected by POA temperature and are closely correlated.Specifically,Dit,Jg,and inverse median lifetime of TDDB have the same trend against POA temperature,which is instructive for SiC/SiO_(2)interface quality improvement.Moreover,area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.
基金supported by the National Training Program of Innovation and Entrepreneurship for Undergraduates(No.201910389022).
文摘To clarify the contribution of oxygen vacancies to room-temperature ferromagnetism(RTFM)in cobalt doped TiO_(2)(Co-TiO_(2)),and in order to obtain the high level of magnetization suitable for spintronic devices,in this work,Co-TiO_(2) nano-particles are prepared via the sol-gel route,followed by vacuum annealing for different durations,and the influence of vacu-um annealing duration on the structure and room-temperature magnetism of the compounds is examined.The results reveal that with an increase in annealing duration,the concentration of oxygen vacancies rises steadily,while the saturation magnetiza-tion(Ms)shows an initial gradual increase,followed by a sharp decline,and even disappearance.The maximum Ms is as high as 1.19 emu/g,which is promising with respect to the development of spintronic devices.Further analysis reveals that oxygen va-cancies,modulated by annealing duration,play a critical role in tuning room-temperature magnetism.An appropriate concentra-tion of oxygen vacancies is beneficial in terms of promoting RTFM in Co-TiO_(2).However,excessive oxygen vacancies will result in a negative impact on RTFM,due to antiferromagnetic superexchange interactions originating from nearest-neighbor Co^(2+)ions.
文摘Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the optical transmission as high as 94% are easily attained by postdeposition annealing treatment. The effects of oxygen concentration in the reactive gas mixture and post-deposition annealing treatment on the optical transmittance as well as optical parameters, such as refractive index (n), extinction coefficient (k), real part (ε') and imaginary part (ε') of the dielectric constant, were studied in the visible and near-infrared region. The highfrequency dielectric constant ε∞ the plasma frequency ωP, and the conduction band effective mass mc of different samples were also investigated
