This paper investigates the new phases formation in the magnesia-spinel, magnesia-zirconia-cal- cia and magnesia-hercynite refractory products as a result of their reaction with kiln hot meal and cement clinker (both ...This paper investigates the new phases formation in the magnesia-spinel, magnesia-zirconia-cal- cia and magnesia-hercynite refractory products as a result of their reaction with kiln hot meal and cement clinker (both rich in SO3 and Cl ions) at the temperature range 1200°C - 1450?C. The labor- atory corrosion tests were conducted by means of pulverous method and by special coating test. The phase identity of the products as well as the mixes after corrosion tests was established by powder X-ray diffraction method. The microstructure development of the contact zones between coating and the products were studied using scanning electron microscopy SEM with EDS spectroscopy. The differences in the reactions proceeding between the phases of the test bricks and the phases of kiln hot meal and cement clinker in dependence on the temperatures have been discussed.展开更多
High mobility quasi two-dimensional electron gas(2DEG)found at the CaZrO_(3)/SrTiO_(3) nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics.Here ...High mobility quasi two-dimensional electron gas(2DEG)found at the CaZrO_(3)/SrTiO_(3) nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics.Here we report that the carrier density and mobility at low temperature can be tuned by gate voltage at the CaZrO_(3)/SrTiO_(3) interface.Furthermore,the magnitude of Rashba spin-orbit interaction can be modulated and increases with the gate voltage.Remarkably,the diffusion constant and the spin-orbit relaxation time can be strongly tuned by gate voltage.The diffusion constant increases by a factor of~19.98 and the relaxation time is reduced by a factor of over three orders of magnitude while the gate voltage is swept from-50 V to 100 V.These findings not only lay a foundation for further understanding the underlying mechanism of Rashba spin-orbit coupling,but also have great significance in developing various oxide functional devices.展开更多
基金The work was financially supported by the Polish State National Centre for Research and Development under Programme INNOTECH-K2/IN2/16/181920/NCBR/13.
文摘This paper investigates the new phases formation in the magnesia-spinel, magnesia-zirconia-cal- cia and magnesia-hercynite refractory products as a result of their reaction with kiln hot meal and cement clinker (both rich in SO3 and Cl ions) at the temperature range 1200°C - 1450?C. The labor- atory corrosion tests were conducted by means of pulverous method and by special coating test. The phase identity of the products as well as the mixes after corrosion tests was established by powder X-ray diffraction method. The microstructure development of the contact zones between coating and the products were studied using scanning electron microscopy SEM with EDS spectroscopy. The differences in the reactions proceeding between the phases of the test bricks and the phases of kiln hot meal and cement clinker in dependence on the temperatures have been discussed.
基金supported by the National Natural Science Foundation of China(Grants Nos.92065110,11974048,and 12074334)。
文摘High mobility quasi two-dimensional electron gas(2DEG)found at the CaZrO_(3)/SrTiO_(3) nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics.Here we report that the carrier density and mobility at low temperature can be tuned by gate voltage at the CaZrO_(3)/SrTiO_(3) interface.Furthermore,the magnitude of Rashba spin-orbit interaction can be modulated and increases with the gate voltage.Remarkably,the diffusion constant and the spin-orbit relaxation time can be strongly tuned by gate voltage.The diffusion constant increases by a factor of~19.98 and the relaxation time is reduced by a factor of over three orders of magnitude while the gate voltage is swept from-50 V to 100 V.These findings not only lay a foundation for further understanding the underlying mechanism of Rashba spin-orbit coupling,but also have great significance in developing various oxide functional devices.
