Cadmium sulphide （CdS） and cadmium telluride （CdTe） thin films are deposited by electron beam evaporation. Atomic force microscopy （AFM） reveals that the root mean square （RMS） roughness values of the CdS film...Cadmium sulphide （CdS） and cadmium telluride （CdTe） thin films are deposited by electron beam evaporation. Atomic force microscopy （AFM） reveals that the root mean square （RMS） roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42-2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300 ℃ show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained.展开更多
Europium ions were chemically bound to CdS nanoparticles surface by diethylenetri-aminepentaacetate （DTPA, 1） in a two-step synthetic route. First 1 was applied to chelate with cadmium on the surface of cadmium-rich...Europium ions were chemically bound to CdS nanoparticles surface by diethylenetri-aminepentaacetate （DTPA, 1） in a two-step synthetic route. First 1 was applied to chelate with cadmium on the surface of cadmium-rich CdS nanoparticles and act as a capping agent. Further, the purified 1-capped particles were used to bind with Eu^3＋. The purified and redispersed particles were characterized by photoluminescence spectroscopy, TEM and SEM. It was observed that Eu^3＋ on the nanoparticle surface significantly increased the band gap emission and decreased the surface emission intensity of the CdS nanoparticles.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 61036001 and 60976001)the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, Chinathe National Basic Research Program of China (Grant No. 2013CB632101)
文摘Cadmium sulphide （CdS） and cadmium telluride （CdTe） thin films are deposited by electron beam evaporation. Atomic force microscopy （AFM） reveals that the root mean square （RMS） roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42-2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300 ℃ show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained.
文摘Europium ions were chemically bound to CdS nanoparticles surface by diethylenetri-aminepentaacetate （DTPA, 1） in a two-step synthetic route. First 1 was applied to chelate with cadmium on the surface of cadmium-rich CdS nanoparticles and act as a capping agent. Further, the purified 1-capped particles were used to bind with Eu^3＋. The purified and redispersed particles were characterized by photoluminescence spectroscopy, TEM and SEM. It was observed that Eu^3＋ on the nanoparticle surface significantly increased the band gap emission and decreased the surface emission intensity of the CdS nanoparticles.
